多路温度测控系统的设计

目的利用单片机技术设计多路温度测控系统,实现多路温度的测量和控制.方法系统以单片机AT89C52为核心,利用多路转换器和新型数字器件MAX6675构成8路K型热电偶温度测量电路,利用D/A转换器AD7528和驱动电路构成输出电路,实现8路一一对应的闭环温度测量控制.系统软件采用PID控制器.结果实践证明,可根据需要增减系统温度信号采样通道的数目,使用软件抗干扰措施,提高了采样数据的可靠性.简化了输入输出硬件结构,使系统具有低成本高速度和较好的测量控制精度.结论多路温度测控系统作为整机适用于现场测量控制应用,也可作为多路温度控制模块应用在体积小、温度测量精度要求较高的大型系统中.

Experimental Studies on Model Scramjet in a Mach 6 High Enthalpy Free-Jet Wind Tunnel

A side-wall compression scramjet model with different combustor geometries has been tested in a propulsion tunnel that typically provides the testing flow with Mach number of 5.8, total temperature of 1800K, total pressure of 4.5MPa and mass flow rate of 4kg/s. This kerosene-fueled scramjet model consists of a side-wall compression inlet, a combustor and a thrust nozzle. A strut was used to increase the contraction ratio and to inject fuels, as well as a mixing enhancement device. Several wall cavities were also employed for flame-holding. In order to shorten the ignition delay time of the kerosene fuel, a little amount of hydrogen was used as a pilot flame. The pressure along the combustor has an evident raise after ignition occurred. Consequently thrust was observed during the fuel-on period. However, the thrust was still less than the drag of the scramjet model. For this reason, the drag variation produced by different strut and cavities was tested. Typical results showed that the cavities do not influence the drag so much, but the length of the strut does.

Experimental Studies on Scramjet Tested in a Freejet Facility

Two different type scramjet models with side-wall compression and top-wall compression inlets have been tested in HPTF (Hypersonic Propulsion Test Facility) under the experimental conditions of Mach number 5.8, total temperature 1700K, total pressure 4.5MPa and mass flow rate 3.5kg/s. The liquid kerosene was used as main fuel for the scramjets. In order to get fast ignition in the combustor, a small amount of hydrogen was used as a pilot. A strut with alternative tail was employed for increasing the compression ratio and for mixing enhancement in the side-wall compression case. Recessed cavities were used as a flameholder for combustion stability. The combustion efficiency was estimated by one dimensional theory. The uniformity of the facility nozzle flow was verified by a scanning pitot rake. The experimental results showed that the kerosene fuel was successfully ignited and stable combustion was achieved for both scramjet models. However the thrusts were still less than the model drags due to the low combustion efficiencies.

Early development of germlings of Sargassum thunbergii (Fucales, Phaeophyta) under laboratory conditions

Morphology and culture studies on germlings of Sargassum thunbergii (Mertens et Roth) Kuntze were carried out under controlled laboratory conditions. Growth characteristics of these germlings grown under different temperatures (from 10 to 25A degrees C), irradiances (from 9 to 88 mu mol photons m(-2) s(-1)), and under blue and white light conditions are described. The development of embryonic germlings follows the classic "8 nuclei 1 egg" type described for Sargassaceae. Fertilized eggs spent 5-6 h developing into multicellular germlings with abundant rhizoids after fertilization. Under conditions of 20A degrees C, 44 mu mol photons m(-2) s(-1) and photoperiod of 12 h, young germlings with one or two leaflets reached 2-3 mm in length after 8 weeks. Temperature variations (10, 15, 20, 25A degrees C) under 88 mu mol photons m(-2) s(-1) significantly influenced the growth rate within the first week, although this effect became less obvious after 8 weeks, especially at 15 and 20A degrees C. Variation in germling growth was highly significant under different irradiances (9, 18, 44, 88 mu mol photons m(-2) s(-1)) at 25A degrees C. Low temperature (10A degrees C) reduced germling growth. Growth of germlings cultured under blue light was lower than in white light. Optimal growth of these germlings occurred at 25A degrees C and 44 mu mol photons m(-2) s(-1).

8 mu m strain-compensated quantum cascade laser operating at room temperature

We report on the material growth and device performance characterization of a strain-compensated In0.54Ga0.46As/In0.51Al0.49As quantum cascade laser at lambda similar to 8 mu m. For 2 mu s pulse at a 5 kHz repetition rate, laser action is achieved up to room temperature (30 degrees C). The tuning coefficient d lambda/dT is 1.37 nm K-1 between 83 K and 163 K and 0.60 nm K-1 in the range from 183 K to 303 K. The peak output power is reported to be similar to 11.3 mW per facet at 293 K and the corresponding threshold current density is 5.69 kA cm(-2).

1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.

AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

Enhancement of the electrical properties in an AlGaN/GaN high electron mobility transistor (HEMT) structures was demonstrated by employing the combination of a high mobility GaN channel layer and an AlN interlayer. The structures were grown on 50 mm semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition (MOCVD). The room temperature (RT) two-dimensional electron gas (2DEG) mobility was as high as 2215 cm(2)/V s, with a 2DEG concentration of 1.044 x 10(13)cm(-2). The 50 mm HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with a resistance uniformity of 2.02%. The 0.35 Pin gate length HEMT devices based on this material structure, exhibited a maximum drain current density of 1300 mA/mm, a maximum extrinsic transconductance of 314 mS/mm, a current gain cut-off frequency of 28 GHz and a maximum oscillation frequency of 60 GHz. The maximum output power density of 4.10 W/mm was achieved at 8 GHz, with a power gain of 6.13 dB and a power added efficiency (PAE) of 33.6%. (c) 2006 Elsevier B.V. All rights reserved.

Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors

High-quality InAsxSb1-x (0 < x <= 0.3) films are grown on GaAs substrates by liquid phase epitaxy and electrical and optical properties of the films are investigated, revealing that the films exhibit Hall mobilities higher than 2x10(4) cm(2) V-1 s(-1) and cutoff wavelengths longer than 10 mu m at room temperature (RT). Photoconductors are fabricated from the films, and notable photoresponses beyond 8 mu m are observed at RT. In particular, for an InAs0.3Sb0.7 film, a photoresponse of up to 13 mu m with a maximum responsivity of 0.26 V/W is obtained at RT. Hence, the InAsxSb1-x films demonstrate attractive properties suitable for room-temperature, long-wavelength infrared detectors. (c) 2006 American Institute of Physics.

Effect of channel surface wettability and temperature gradients on the boiling flow pattern in a single microchannel

The objective of this paper is to investigate the effects of channel surface wettability and temperature gradients on the boiling flow pattern in a single microchannel. The test section consists of a bottom silicon substrate bonded with a top glass cover. Three consecutive parts of an inlet fluid plenum, a central microchannel and an outlet fluid plenum were etched in the silicon substrate. The central microchannel had a width of 800 mu m and a depth of 30 mu m. Acetone liquid was used as the working fluid. High outlet vapor qualities were dealt with here. The flow pattern consists of a fluid triangle (shrinkage of the liquid films) and a connected long liquid rivulet, which is generated in the central microchannel in the timescale of milliseconds. The peculiar flow pattern is formed due to the following reasons: (1) the liquid rivulet tends to have a large contact area with the top hydrophilic channel surface of the glass cover, but a smaller contact area with the bottom silicon hydrophobic surface. (2) The temperature gradient in the chip width direction at the top channel surface of the glass cover not only causes the shrinkage of the liquid films in the central microchannel upstream, but also attracts the liquid rivulet populated near the microchannel centerline. (3) The zigzag pattern is formed due to the competition between the evaporation momentum forces at the vapor-liquid interfaces and the force due to the Marangoni effect. The former causes the rivulet to deviate from the channel centerline and the latter draws the rivulet toward the channel centerline. (4) The temperature gradient along the flow direction in the central microchannel downstream causes the breakup of the rivulet to form isolated droplets there. (5) Liquid stripes inside the upstream fluid triangle were caused by the small capillary number of the liquid film, at which the large surface tension force relative to the viscous force tends to populate the liquid film locally on the top glass cover surface.

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition. The HEMT structure exhibits a typical two-dimensional electron gas (2DEG) mobility of 1944cm2/(V · s) at room temperature and 11588cm2/(V· s) at 80K with almost equal 2DEG concentrations of about 1.03 × 1013 cm-2 High crystal quality of the HEMT structures is confirmed by triple-crystal X-ray diffraction analysis. Atomic force microscopy measurements reveal a smooth AlGaN surface with a root-mean-square roughness of 0. 27nm for a scan area of 10μm × 10μm. HEMT devices with 0.8μm gate length and 1.2mm gate width are fabricated using the structures. A maximum drain current density of 957mA/mm and an extrinsic transconductance of 267mS/mm are obtained.

Surface Tension and Its Temperature Coefficient of Molten Tin Determined with the Sessile Drop Method at Different Oxygen Partial Pressures

The surface tension of molten tin has been determined by the sessile drop method at The surface tension of molten tin has been determined by the sessile drop method at temperatures ranging from 523 to 1033 K and in the oxygen partial pressure (P-O2) range from 2.85 x 10(-19) to 8.56 x 10(-6) MPa, and its dependence on temperature and oxygen partial pressure has been analyzed. At P-O2 = 2.85 x 10(-19) and 1.06 x 10(-15) MPa, the surface tension decreases linearly with the increase of temperature and its temperature coefficients are -0.151 and -0.094 mNm(-1) K-1, respectively. However, at high P-O2 (3.17 x 10(-10), 8.56 x 10(-6) MPa), the surface tension increases with the temperature near the melting point (505 K) and decreases above 723 K. The surface tension decrease with increasing P-O2 is much larger near the melting point than at temperatures above 823 K. The contact angle between the molten tin and the alumina substrate is 158-173degrees, and the wettability is poor.