1053，527，351nm倍频分离膜的制备与性能研究

用电子束蒸发及光电极值监控技术在石英基底上沉积了三倍频分离膜，将部分样品置空气中于250℃温度下进行3h热退火处理。然后用Lambda900分光光度计测量了样品的光谱性能；用表面热透镜技术测量了样品的弱吸收值；用调Q脉冲激光装置测试了样品分别在355nm和1064nm的抗激光损伤阈值。实验结果发现，样品的实验光谱性能良好。退火前后其光谱性能几乎没有发生温漂，说明薄膜的温度稳定性好；同时弱吸收平均值从退火前的1.07×10^-4下降到退火后的6．2×10^-5，从而使对基频的抗激光损伤阈值提高，从14．6J

Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74μm

The compressively strained InGaAs/InGaAsP quantum well distributed feedback laser with ridge-wave- guide is fabricated at 1.74μm. It is grown by low-pressure metal organic chemical vapor deposition（MOCVD）. A strain buffer layer is used to avoid indium segregation. The threshold current of the device uncoated with length of 300μm is 11.5mA. The maximum output power is 14mW at 100mA. A side mode suppression ratio of 35.5dB is obtained.