47 resultados para 670701 Industrial gases

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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A new aerodynamic principle of flame stabilization and combustion intensification, the coflow jets with large velocity difference, is described. One or more small high-velocity jets of air or steam, injected off the axis and in the same direction as the low-velocity main fuel-air flow into the combustor, create a large recirculation zone of high turbulence intensity in which the combustibles and high temperature gases are effectively mixed, so that stable and intensive combustion can be maintained even for fuels with poor ignition. A pulverized coal combustor based on the principle mentioned above is shown to be characteristic of excellent combustoom and a simple structure. A number of precombustors of this type are in operation at some power stations and industrial boilers of China. Using such precombustor, successtul startups and part-load operation of the boilers have become available under conditions of unpreheated air and low-grade coal with volatiles as low as 15% and ash content as high as 30%. This principle shows good promise as an attractive new technology of combustion.

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Czochralski (CZ) crystal growth process is a widely used technique in manufacturing of silicon crystals and other semiconductor materials. The ultimate goal of the IC industry is to have the highest quality substrates, which are free of point defect, impurities and micro defect clusters. The scale up of silicon wafer size from 200 mm to 300 mm requires large crucible size and more heat power. Transport phenomena in crystal growth processes are quite complex due to melt and gas flows that may be oscillatory and/or turbulent, coupled convection and radiation, impurities and dopant distributions, unsteady kinetics of the growth process, melt crystal interface dynamics, free surface and meniscus, stoichiometry in the case of compound materials. A global model has been developed to simulate the temperature distribution and melt flow in an 8-inch system. The present program features the fluid convection, magnetohydrodynamics, and radiation models. A multi-zone method is used to divide the Cz system into different zones, e.g., the melt, the crystal and the hot zone. For calculation of temperature distribution, the whole system inside the stainless chamber is considered. For the convective flow, only the melt is considered. The widely used zonal method divides the surface of the radiation enclosure into a number of zones, which has a uniform distribution of temperature, radiative properties and composition. The integro-differential equations for the radiative heat transfer are solved using the matrix inversion technique. The zonal method for radiative heat transfer is used in the growth chamber, which is confined by crystal surface, melt surface, heat shield, and pull chamber. Free surface and crystal/melt interface are tracked using adaptive grid generation. The competition between the thermocapillary convection induced by non-uniform temperature distributions on the free surface and the forced convection by the rotation of the crystal determines the interface shape, dopant distribution, and striation pattern. The temperature gradients on the free surface are influenced by the effects of the thermocapillary force on the free surface and the rotation of the crystal and the crucible.

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A hot particle jet is induced as a laser pulse from a free oscillated Nd:YAG laser focused on a coal target. The particle jet successfully initiates combustion in a premixed combustible gas consisting of hydrogen, oxygen, and air. The experiment reveals that the ionization of the particle jet is enhanced during the laser pulse. This characteristic is attributed to the electron cascade process and the ionization of the particles or molecules of the target. The initial free electrons, which are ablated from the coal target, are accelerated by the laser pulse through the inverse Bremsstrahlung process and then collide with the neutrals in the jet, causing the latter to be ionized.

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The exhaust gases from industrial furnaces contain a huge amount of heat and chemical enthalpy. However, it is hard to recover this energy since exhaust gases invariably contain combustible components such as carbon monoxide (CC). If the CO is unexpectedly ignited during the heat recovery process, deflagration or even detonation could occur, with serious consequences such as complete destruction of the equipment. In order to safely utilize the heat energy contained in exhaust gas, danger of its explosion must be fully avoided. The mechanism of gas deflagration and its prevention must therefore be studied. In this paper, we describe a numerical and experimental investigation of the deflagration process in a semi-opened tube. The results show that, upon ignition, a low-pressure wave initially spreads within the tube and then deflagration begins. For the purpose of preventing deflagration, an appropriate amount of nitrogen was injected into the tube at a fixed position. Both simulation and experimental results have shown that the injection of inert gas can successfully interrupt the deflagration process. The peak value of the deflagration pressure can thereby be reduced by around 50%. (C) 2008 Elsevier Ltd. All rights reserved.

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On the metalorganic chemical vapour deposition growth of AlN, by adjusting H-2+N-2 mixture gas components, we can gradually control island dimension. During the Volmer - Weber growth, the 2-dimensional coalescence of the islands induces an intrinsic tensile stress. Then, this process can control the in-plane stress: with the N-2 content increasing from 0 to 3 slm, the in-plane stress gradually changes from 1.5 GPa tensile stress to - 1.2GPa compressive stress. Especially, with the 0.5 slm N-2 + 2.5 slm H-2 mixture gas, the in-plane stress is only 0.1 GPa, which is close to the complete relaxation state. Under this condition, this sample has good crystal and optical qualities.

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The purpose of this article is to examine the methods and equipment for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three separating methods and equipment are used to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the processes of semiconductor materials manufacture. The abatement procedure for this group of pollutants consists of adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus, HF, HCl, NO2, and SO3 emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and bases in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in a flocculation-sedimentation compact device equipment. Test results showed that all waste gases and water after the abatement procedures presented in this article passed the discharge standards set by the State Environmental Protection Administration of China.

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The beating patterns in the Shubnikov-de Haas oscillatory magnetoresistance originating from zero-field spin splitting of two-dimensional electron gases (2DEGs) in In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As quantum wells with silicon delta doped on the upper barrier layer have been investigated by means of magnetotransport measurements before and after illumination. Contrary to the expectation, after each illumination, the beating nodes induced by the zero-field spin-splitting effect shift to lower and lower magnetic field due to the decrease in the zero-field spin-splitting energy of the 2DEGs. The anomalous phenomenon of the shift of the beating nodes and the decrease in spin-orbit coupling constants after illumination cannot be explained by utilizing the previous linear Rashba model. It is suggested that the decrease in the zero-field spin-splitting energy and the spin-orbit coupling constant arise from the nonlinear Rashba spin splitting.

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We present photoluminescence studies on highly dense two-dimensional electron gases in selectively Si delta-doped GaAs/In0.18Ga0.82As/Al0.25Ga0.75As quantum wells (N(s) = 4.24 x 10(12) cm-2). Five well-resolved photoluminescence lines centered at 1.4194, 1.4506, 1.4609, 1.4695 and 1.4808 eV were observed, which are attributed to the subband excition emission. The subband separations clearly exhibit the feature of a typical quantum well with triangle and square potential. These very intensive and sharp luminescence peaks with linewidths of 2.2 to 3.5 meV indicate the high quality of the structures. Their dependence on the excitation intensity and temperatures are also discussed.