1.58 mu m InGaAs quantum well laser on GaAs

We demonstrate the 1.58 mu m emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250x50 mu m(2) broad area laser, a minimum threshold current density of 490 A/cm(2) was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 mu m GaAs-based lasers. (C) 2007 American Institute of Physics.

Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE

Al0.58Ga0.42N epilayers are grown by ammonia gas source molecular beam epitaxy (NH3-MBE) on (0001) sapphire substrate using AlGaN buffer layer. The effects of the buffer layer growth temperature on the properties of Al0.58Ga0.42N epilayer are especially investigated. In-situ high-energy electron diffraction (RHEED), double-crystal X-ray diffraction (DCXRD), atomic force microscopy (AFM), photoconductivity measurement and cathodoluminescence (CL) are used to characterize the samples. It is found that high growth temperature of AlGaN buffer layer would improve the crystalline quality, surface smoothness, optical quality and uniformity of the Al0.58Ga0.42N epilayer. The likely reason for such improvements is also suggested. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

~(40)Ca+~(58)Fe,~(58)Ni反应中的径向膨胀流研究

利用同位旋相关的Boltzmann Langevin方程研究了40 Ca + 5 8Fe和40 Ca +5 8Ni两个反应系统在 53 ,1 0 0 ,1 50和 2 0 0MeV/u入射能量下对心碰撞的径向膨胀流 .发现对于丰中子系统40 Ca + 5 8Fe的径向膨胀流系统性地小于稳定系统40 Ca+ 5 8Ni的径向膨胀流 .在假定轰击能量与反应体系的压缩密度呈抛物线关系时 ,能够解释入射能量和径向膨胀流之间呈现的直线关系 .提取了出现径向膨胀流的轰击能量阈值 ,发现对丰中子系统40 Ca + 5 8Fe得到的能量阈值小于稳定系统40 Ca+ 5 8Ni所得到的能量阈值

25MeV/u ~(40)Ar+~(115)In,~(58)Ni,~(27)Al反应中前中角区碎片角分布和元素Z分布

测量了 ２５ＭｅＶ／ｕ４０　Ａｒ＋１１５　Ｉｎ，５８　Ｎｉ，２７　Ａ１反应前中角区出射碎片的角分布和 元素 Ｚ分布．用改进的量子分子动力学（ＭＱＭＤ）模型研究了碎片的角分布和 Ｚ 分布．理论计算值和实验值整体上符合得很好，但在前角区，ＭＱＭＤ模型低估 了碎片的产额，在中角区对于Ｚ接近弹核的碎片，理论计算值比实验值偏高．碎 片产物的角分布和Ｚ分布还与统计蒸发模型ＧＥＭＩＮＩ进行了比较，结果表明，在 前角区平衡蒸发成份所占的比例很小，中角区所占的比例有所增加，但仍然是较 小的比例．同时发现平衡蒸发成份随着出射碎片核电荷数Ｚ的减小而逐渐减 少．

Kinetic energies of C-n(+) (n <= 58) fragment ions produced by nanosecond laser impact on C-60

Laser-induced fragmentation of C-60 has been studied using a time-of-flight mass spectrometric technique. The average kinetic energies of fragment ions C-n(+) (n <= 58) have been extracted from the measured full width at half maximum (FWHM) of ion beam profiles. The primary formation mechanism of small fragment ion C-n(+) (n < 30) is assumed to be a two-step fragmentation process: C60 sequential decay to unstable C-30(+) ion and the binary fission of C-30(+). Considering a second photo absorption process in the later part of laser pulse duration, good agreement is achieved between experiment and theoretical description of photoion formation. (C) 2009 Elsevier B. V. All rights reserved.

（一）兰州重离子加速器束流能量、能散测量（二）中能~(12)C + ~(64)Ni, ~(58)Ni碎裂反应的实验研究

本论文通过讨论选择了简单易行的弹性散射法来测量兰州重离子加速器流能量、能散，描述了整个实验的准备、进行及数据处理，并讨论、修正了所得的实验结果，得到了~(12)C束流能散为(2.74 ± 0.14) * 10~(-2)，能量经刻度为每核子46.4MeV/u。本工作还拟采用飞行时间法来测量束流能量的绝对值，以检验弹性散射法测得的能量值，而且已设计制作了用作起始探测器的微道板（MCP）零时探测器，上器进行了必要的高调试，用MCP零时探测器作为起始探测器，Si半导体探测器作为终止探测器，对于10MeV/uα粒子，得到了好于560ps的总时间分辩，完全可用于中能重离子实验探测

46.7 MeV/u~(12)C轰击~(58)Ni、~(115)In、~(197)Au反应中粒子发射研究中子皮及中子分布弥散度对核势的影响

用能量密度公式及小液滴模型给出的费米密度分布，并引入中子皮及中子分布弥散度随中子过剩自由度增加而增加这一因素，计算了重离子反应在相互作用势及熔合位垒。熔合位垒的计算值和实验值符合很好，特别是在中重核区域，改善了以前的计算结果。详细研究了亲近势标度，发现用中子皮及中子分布弥散度的变化能较好地解释中子过剩自由度对新近势标度偏离的影响。本工作对奇异核结构与核反应性质的研究无疑是有用的。我们利用HIRFL提供的46.7MeV/u ~(12)C束轰击~(58)Ni、~(115)In、~(197)Au研究了反应中发射的α粒子角分布和能谱。从速度表象中洛仑兹不变截面等高图中明显看到发射α粒子的三个源。用这三个源的运动模型成功拟合了α粒子能谱，所提取的参数符合费米气体模型计算结果，并讨论了能谱及拟合参数对靶的依赖关系。认为快速源实质上来自弹核碎裂或类弹核碎裂

H_8[P_4W_(14)O_(58)Na_4(H_2O)_(20)]·16H_2O的合成、晶体结构与性质

用水热法合成了 H8[P4 W14 O58Na4 (H2 O) 2 0 ]· 16 H2 O,通过 X射线单晶衍射、元素分析和IR进行了结构表征 ,用 TG- DTA研究了热稳定性 .晶体属三斜晶系 ,P1空间群 ,a=1.1379(2 )nm,b=1.36 32 (3) nm,c=1.6 2 71(3) nm;α=78.2 0 (3)°,β=71.2 0 (3)°,γ=71.6 2 (3)°;V=2 .2 52 5(8) nm3 ,Z=1,Mr=4 374 .38,Dc=3.2 2 5mg/ cm3 ,μ=18.0 0 7mm-1,F(0 0 0 ) =1972 ,R=0 .0 74 2 ,Rw=0 .2 0 0 4 .标题化合物的阴离子是由两个 PW7O2 9Na2 (H2 O) 10 亚单元通过与两个磷原子上键合的氧连接而成 ,分子内形成了一个 0 .6 6 14nm× 0 .3189nm的微孔.

Studies on organolanthanide complexes .58. Syntheses of 1,1'-(3-oxa-pentamethylene)dicyclopentadienyl divalent organolanthanides (Ln=Sm, Yb) and X-ray molecular structure of O(CH2CH2C5H4)(2)Yb(DME)

The compounds O(CH2CH2C5H4)(2)Ln(THF)(2) [Ln = Sm(1), Yb(2)] were synthesized by the reduction of O(CH2CH2C5H4)(2)LnCl with sodium metal in tetrahydrofuran (THF) at room temperature. Recrystallization of 2 from dimethoxyethane (DME) produced the single-crystal O(CH2CH2C5H4)(2)Yb(DME) (3) whose structure has been determined by an X-ray diffraction study. The crystals are orthorhombic, space group Pcab, with a = 14.168(4), b = 13.541(6), c = 19.314(8) Angstrom, Z = 8, D-calc. = 1.66 g cm(-3).