南海北部湾23/25太阳区块海底工程地质调查与评价

<正> 本项成果,是承包美国太阳东方勘探公司任务而完成的。在系统分析总结了南海西部石油公司“南海—503工程地质取芯船”在南海北部湾23/25太阳区块所进行的测深、侧扫声纳、地震声学剖面测量,及4口孔深40米的工程地质浅钻土柱等材料的基础上,详细阐述了

C_(60)自组装单分子膜的制备及其摩擦特性

利用胺基与C60 分子的加成反应 ,在 3 胺基丙基 三乙氧基硅烷 (APS)的自组装单分子膜 (SAMs)表面上成功的制备了与基底化学键结合的C60 SAMs。其表面水接触角约为 76° ,膜厚约为 1.15nm ,AFM形貌像显示其表面光滑、均匀 ,基本不含缺陷。摩擦学结果表明 ,APS自组装单分子膜由于其分子链短 ,膜的有序性差 ,表面颗粒聚集物及“针孔”等缺陷多 ,而不具有润滑作用。当在其上形成C60 单分子层膜后 ,表现出优异的摩擦学性能 ,摩擦系数约为 0 .0 9～ 0 .13,在给定实验条件下抗磨损寿命大于 10 0 0 0次 ,有望作为微型机械的边界润滑材料使用。

Generation of 17-TW 23-fs pulses with a two-stage Ti : Sapphire amplifier at repetition rate 10 Hz

We have developed a two-stage Ti:sapphire amplifier system which can produce 17-TW/23-fs pulses at a repetition rate 10 MHz. A birefringent plate is used in the regenerative amplifier to alleviate gain narrowing, while an all-reflective cylindrical-mirror-based pulse stretcher and an acousto-optic programmable dispersive filter (AOPDF) are used to compensate for the higher order dispersion of the system.

Przewalskin A: A new C-23 terpenoid with a 6/6/7 carbon ring skeleton from Salvia przewalskii maxim

Przewalskin A (1), a novel C-23 terpenoid with a 6/6/7 carbon ring skeleton, was isolated from Salvia przewalskii. Its structure was determined by comprehensive 1D NMR, 2D NMR, and MS spectroscopic analysis and subsequently confirmed by a single-crystal X

Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms

The bulge test is successfully extended to the determination of the fracture properties of silicon nitride and oxide thin films. This is achieved by using long diaphragms made of silicon nitride single layers and oxide/nitride bilayers, and applying comprehensive mechanical model that describes the mechanical response of the diaphragms under uniform differential pressure. The model is valid for thin films with arbitrary z-dependent plane-strain modulus and prestress, where z denotes the coordinate perpendicular to the diaphragm. It takes into account the bending rigidity and stretching stiffness of the layered materials and the compliance of the supporting edges. This enables the accurate computation of the load-deflection response and stress distribution throughout the composite diaphragm as a function of the load, in particular at the critical pressure leading to the fracture of the diaphragms. The method is applied to diaphragms made of single layers of 300-nm-thick silicon nitride deposited by low-pressure chemical vapor deposition and composite diaphragms of silicon nitride grown on top of thermal silicon oxide films produced by wet thermal oxidation at 950 degrees C and 1050 degrees C with target thicknesses of 500, 750, and 1000 mn. All films characterized have an amorphous structure. Plane-strain moduli E-ps and prestress levels sigma(0) of 304.8 +/- 12.2 GPa and 1132.3 +/- 34.4 MPa, respectively, are extracted for Si3N4, whereas E-ps = 49.1 +/- 7.4 GPa and sigma(0) = -258.6 +/- 23.1 MPa are obtained for SiO2 films. The fracture data are analyzed using the standardized form of the Weibull distribution. The Si3N4 films present relatively high values of maximum stress at fracture and Weibull moduli, i.e., sigma(max) = 7.89 +/- 0.23 GPa and m = 50.0 +/- 3.6, respectively, when compared to the thermal oxides (sigma(max) = 0.89 +/- 0.07 GPa and m = 12.1 +/- 0.5 for 507-nm-thick 950 degrees C layers). A marginal decrease of sigma(max) with thickness is observed for SiO2, with no significant differences between the films grown at 950 degrees C and 1050 degrees C. Weibull moduli of oxide thin films are found to lie between 4.5 +/- 1.2 and 19.8 +/- 4.2, depending on the oxidation temperature and film thickness.

Fiber Bragg grating pressure sensor with enhanced sensitivity

A novel fiber Bragg grating (FBG) pressure sensor with the enhanced sensitivity has been demonstrated. A piston-like diaphragm with a hard core in the center is used to enhance the sensitivity. Both the theoretical analysis and the experimental result show that the radius of the hard core has significant effect on the pressure sensitivity. When the radius of the hard core is 1.5 mm, a pressure sensitivity of 7.23 nm/MPa has been achieved.

黄土塬区三种豆科牧草的土壤养分剖面分布特征与平衡

为了解豆科牧草短期种植对土壤养分环境影响的进程和规律,通过田间试验对沙打旺、苜蓿和胡枝子等3种豆科牧草以不同密度单播、混播对土壤有机质、全氮、全磷剖面分布和平衡输出的影响进行了定性和定量分析。所有处理土壤全氮和有机质含量在土壤剖面2m深度范围内均呈典型的"S"形分布,全磷呈抛物线形分布。单播牧草固氮能力与播种密度呈正相关;苜蓿固氮能力最强,高密度下表观生物固氮量达507.5kg·hm-2。沙打旺生长1年可使土壤有机质平均净增3.51%。沙打旺和苜蓿全磷平均输出比率分别为43.14%和40.24%,显著高于胡枝子(23.74%);胡枝子与沙打旺、苜蓿的两两混播处理和3种牧草混播处理平均全磷输出比率分别为20.73%、26.33%、25.83%。试验结果表明,3种豆科牧草均可显著提高土壤有机质累积,沙打旺和苜蓿对土壤全氮和全磷的消耗显著大于胡枝子,但前两者的固氮能力也强于后者。以适当密度进行的不同牧草混播处理由于种间良性竞争和共生协调作用可优化混播群体对土壤养分的消耗利用。

P_(507)萃取分离Gd、Tb、Dy三出口工艺及多元稀土萃取分离数学模拟的研究

溶剂分馏萃取是分离、提纯、富集物质的有效方法之一，由于它具有分离效果好，易于操作等优点。因此，在稀土萃取分离工艺中得到了广泛的应用。但是，每个分馏萃取工艺只能分离两个组份，若要分离所有稀土元素，流程较长。为改进生产，本工作提出了一种三出口萃取分离工艺流程。这种工艺流程可视为由两个萃取段和两个洗涤段组成，由于在两个洗涤段中，两相稀土浓度较高、稀土交换量较大，故可使级数减少。采用此工艺流程进行了P_(507)萃取分离Gd、Tb、Dy三组元素的串级模拟实验，得到了纯度大于99.99％的La－Gd，纯度大于99.8％的Dy－Lu和含量高于65％的Tb_4O_2富集物。Tb的收率大于95％。串级总级数为38级。通过对P_(507)萃取实际体系中稀土元素行为的研究，建立了多元体系中稀土在两相分配的经验模型。Z＝C_1H~(C2)×T~(C_3)e~(c_4X(Tb)+C_5X(Dy))和具有一定物理意义的半热力学半经验模型。YT=(Z/H)~3[Σ from i=1 to m of CiXi + Co]根据氨化P_(507)萃取工艺中稀土总浓度在两相的分布规律，提出了一种适合氨化P_(507)萃取分离多元混合稀土工艺的串级计算方法，并用FORTRAN语言编写 了计算程序。使用自编的计算程序进行了氨化P_(507)萃取分离Gd、Tb、Dy三出口工艺的串级模拟计算，计算结果与实验值基本一致。同时，对文献中报导的中间某级开设出口的一分三工艺也进行了串级计算，根据计算结果讨论了两种工艺的优缺点。对恒定混合萃取比的多元稀土萃取分离工艺，进行了在不同串级条件下分界元素在各级的积累及易萃组份和难萃取份的有效分离系数在各级变化规律的计算。结果表明，有效分离系数在级体中出现一极小值β~*，并且β~*值的大小与其出现在级体中的位置随条件不同而改变。对同一萃取体系，当出口产品较纯时，用线性回归分析法关联计算数据得到了β~*与出口产品组成和总萃取比的经验关系式，在萃取段有（A、B与C分离的工艺）β~*/β_B~C=C1+C2EM+C_3ln (A1)/(B1)引入有效分离系数后，进行了环烷酸萃取分离钇与镧系元素的串级模拟计算，计算结果与实验值基本吻合。

稳定可调谐的单纵模多环形腔掺铒光纤激光器

提出了一种多环形腔(MRC)结构的稳定可调的单纵模(SLM)掺铒光纤激光器,多环形腔结构由双环形有源腔和两个次级无源腔组成。这种激光器是利用光纤法布里-珀罗可调滤波器(FFP-TF)以及光学光栅滤波器(OGF)两种滤波器和多环形腔结构相结合来共同选模。可实现波长调节范围为1528～1565 nm,在整个波长调节范围内边模抑制比大于44.53 dB,在1554 nm附近边模抑制比可以达到最大值51.18 dB, 输出功率为-8.84 dBm,通过应用多环型腔结构,激光器的输出很稳定,在18 min的观察时间内,中心波长的变化小于0.02 nm,输出功率的变化小于0.04 dBm,实现了稳定且可调谐的单纵模输出。

GaAs基GaAsSb／GaInAs双层量子阱的发光

嵌入GaAs中的GaAsSb／GaInAs量子阱因其在1．3～1．5μm光通信波段发光的潜力而受到关注，我们研究了一系列MBE生长的GaAsSb／GaInAs量子阱样品的光致发光，发现所有样品在室温下都出现了一个较强的、波长在1．3μm附近的低能峰和一个较弱的高能峰。变温及变激发功率的荧光谱测量研究发现，高能峰只有在150K以上的测试条件下才能观测到，并且其相对强度随着温度的升高而增加，其调制光谱显示出第一类跃迁的特征。他们建立了理论模型，计算的结果支持将这一发光峰指派为GaInAs层内电子的基态与重空穴激发态间的跃迁，并与实验数据吻合得很好。同时初步讨论了改善1．3μm的低能峰发光的方法。