Quasi-Dammann Grating With Proportional Intensity Array Spots

A quasi-Dammann grating is proposed to generate array spots with proportional-intensity orders in the far field. To describe the performance of the grating, the uniformities of the array spots are redefined. A two-dimensional even-sampling encode scheme is adopted to design the quasi-Dammann grating. Numerical solutions of the binary-phase quasi-Dammann grating with proportional-intensity orders are given. The experimental results with a third-order quasi-Dammann grating, which has an intensity proportion of 3:2:1 from zero order to second order, are presented. (C) 2008 Optical Society of America

Single mode vertical-cavity surface emitting laser with surface plasmon nanostructure

The vertical-cavity surface-emitting laser(VCSEL) has proved to be a low cost light source with attractive properties such as surface emission, circular and low divergence output beam, and simple integration in two-dimensional array. Many new applications such as in spectroscopy, optical storage, short distance fiber optic interconnects, and in longer distance communication, are continuously arising. Many of these applications require stable and single-mode high output power. Several methods that affect the transverse guiding and/or introduce mode selective loss or gain have been developed. In this study, a method for improving the single mode output power by using metal surface plasmons nanostructure is proposed. Theoretical calculation shows that the outpout power is improved about 50% compared to the result of standard VCSELs.

Neuro-Stimulus Chip with Photodiodes Array for Sub-retinal Implants

A prototype neuro-stimulus chip for sub-retinal implants in blind patients affected by Age-related Macular Degeneration (AMD) or Retinitis Pigmentosa (RP) is presented in this paper. This retinal prosthetic chip was designed to replace the degenerated photoreceptor cells, and in order to stimulate directly the remaining healthy layers of retinal neurons. The current stimulus circuits are monolithic integrated with photodiodes (PD) array, which can convert the illumination on the eyes into bi-phasic electrical pulses. In addition, a novel charge cancellation circuit is used to discharge the electrodes for medical safty. The prototype chip is designed and fabricated in HJTC 0.18 mu m N-well CMOS 1P6M Mix-signal process, with a +/- 2.5 V dual voltage power supply.

Highly sensitive wave-front sensor with a non-zero-order phase plate

We propose a novel highly sensitive wave front detection method for a quick check of a flat wave front by taking advantage of a non-zero-order pi phase plate that yields a non-zero-order diffraction pattern. When a light beam with a flat wave front illuminates a phase plate, the zero-order intensity is zero. When there is a slight distortion of the wave front, the zero-order intensity increases. The ratio of first-order intensity to that of zero-order intensity is used as the criterion with which to judge whether the wave front under test is flat, eliminating the influence of background light. Experimental results demonstrate that this method is efficient, robust, and cost-effective and should be highly interesting for a quick check of a flat wave front of a large-aperture laser beam and adaptive optical systems. (c) 2005 Optical Society of America.

Improved uniformity of target illumination by combining a lens array and the technique of spectral dispersion

A scheme using a lens array and the technique of spectral dispersion is presented to improve target illumination uniformity in laser produced plasmas. Detailed two-dimensional simulation shows that a quasi-near-field target pattern, of steeper edges and without side lobes, is achieved with a lens array, while interference stripes inside the pattern are smoothed out by the use of the spectral dispersion technique. Moving the target slightly from the exact focal plane of the principal focusing lens can eliminate middle-scale-length intensity fluctuation further. Numerical results indicate that a well-irradiated laser spot with small nonuniformity and great energy efficiency can be obtained in this scheme. (c) 2007 American Institute of Physics.

Mode Analysis for Equilateral-Triangle-Resonator Microlasers with Metal Confinement Layers

Mode characteristics are analyzed for electrically injected equilateral-triangle-resonator (ETR) semiconductor microlasers, which are laterally confined by insulating barrier SiO2 and electrode metals Ti-Au. For the ETR without metal layers, the totally confined mode field patterns are derived based on the reflection phase shifts, and the Q-factors are calculated from the far-field emission of the analytical near field distribution, which are agreement very well with the numerical results of the finite-difference time-domain (FDTD) simulation. The polarization dependence reflections for light rays incident on semiconductor-SiO2 -Ti-Au multi-layer structures are accounted in considering the confinement of TE and TM modes in the ETR with the metal layers. The reflectivity will greatly reduce with a Ti layer between SiO2 and Au for light rays with incident angle less than 30 especially for the TE mode, even the thickness of the Ti layer is only 10 nm. If the ETR is laterally confined by SiO2-Au layers without the Ti layer, the Fabry-Perot type modes with an incident angle of zero on one side of the ETR can also have high Q-factor. The FDTD simulation for the ETR confined by metal layers verifies the above analysis based on multi-layer reflections. The output spectra with mode intervals of whispering-gallery modes and Fabry-Perot type modes are observed from different ETR lasers with side length of 10 m, respectively.

White light emission from Eu3+ in CaIn2O4 host lattices

CaIn2O4:xEu(3+) (x=0.5%,1.0%,1.5%) phosphors were prepared by the Pechini sol-gel process [U.S. Patent No. 3,330,697 (1967)] and characterized by x-ray diffraction and photoluminescence and cathodoluminescence spectra as well as lifetimes. Under the excitation of 397 nm ultraviolet light and low voltage electron beams, these phosphors show the emission lines of Eu3+ corresponding to D-5(0,1,2,3)-F-7(J) (J=0,1,2,3,4) transitions from 400 to 700 nm (whole visible spectral region) with comparable intensity, resulting in a white light emission with a quantum efficiency near 10%. The luminescence mechanism for Eu3+ in CaIn2O4 has been elucidated.

Highly efficient electroluminescence from green-light-emitting electrochemical cells based on Cu-I complexes

The complexes [Cu(dnpb)(DPEphos)](+)(X-) (dnpb and DPEphos are 2,9-di-n-butyl-1,10-phenanthroline and bis[2-(diphenyl-phosphino)phenyl]ether, respectively, and X- is BF4-, ClO4-, or PF6-) can form high quality films with photoluminescence quantum yields of up to 71 +/- 7%. Their electroluminescent properties are studied using the device-structure indium tin oxide (ITO)/complex/metal cathiode. The devices emit green light efficiently, with an emission maximum of 523 nm, and work in the mode of light-emitting electrochemical cells. The response time of the devices greatly depends on the driving voltage, the counterions, and the thickness of the complex film. After pre-biasing at 25 V for 40 s, the devices turn on instantly, with a turn-on voltage of ca. 2.9 V. A current efficiency of 56 cd A(-1) and an external quantum efficiency of 16% are realised with Al as the cathode. Using a low-work-function metal as the cathode can significantly enhance the brightness of the device almost without affecting the turn-on voltage and current efficiency. With a Ca cathode, a brightness of 150 cd m(-2) at 6 V and 4100 cd m(-2) at 25 V is demonstrated. The electroluminescent performance of these types of complexes is among the best so far for transition metal complexes with counterions.

Production of light olefins and aromatic hydrocarbons through catalytic cracking of naphtha at lowered temperature

Naphtha catalytic cracking were carried out at 650 degrees C over modified ZSM-5. Light olefins and BTX could be obtained over the catalysts. The products showed variable distribution with different catalyst modification. Some modification, such as Fe, Cu and La favored the BTX generation and P and Mg modification favored the light olefins production. In N-2 stream cracking catalyzed by LaZSM-5, more than 50% naphtha feed were converted to BTX, while in steam cracking, with an improved modified catalyst, P, La/ZSM-5, naphtha can be converted to light olefins with high activity and long-term stability.

Absorption characteristic and nonvolatile holographic recording in LiNbO3 : Cr : Cu crystals

The absorption characteristic of lithium niobate crystals doped with chromium and copper (Cr and Cu) is investigated. We find that there are two apparent absorption bands for LiNbO3:Cr:Cu crystal doped with 0.14 wt.% Cr2O3 and 0.011 wt.% CuO; one is around 480 nm, and the other is around 660 nm. With a decrease in the doping composition of Cr and an increase in the doping composition of Cu, no apparent absorption band in the shorter wavelength range exists. The higher the doping level of Cr, the larger the absorbance around 660 nm. Although a 633 nm red light is located in the absorption band around 660 nm, the absorption at 633 nm does not help the photorefractive process; i.e., unlike other doubly doped crystals, for example, LiNbO3:Fe:Mn crystal, a nonvolatile holographic recording can be realized by a 633 nm red light as the recording light and a 390 nm UV light as the sensitizing light. For LiNbO3:Cr:Cu crystals, by changing the recording light from a 633 nm red light to a 514 nm green light, sensitizing with a 390 nm UV light and a 488 nm blue light, respectively, a nonvolatile holographic recording can be realized. Doping the appropriate Cr (for example, N-Cr = 2.795 X 10(25)m(-3) and N-Cr/N-Cu = 1) benefits the improvement of holographic recording properties. (c) 2005 Optical Society of America.

光学薄膜中界面层和表面吸附层对相位延迟的影响

多层介质反射镜在非正入射的时候，两个不同的偏振态之间会产生不同的相移．根据空气与膜层、膜层之间的实际情况，建立了界面层和表面吸附层模型，并运用它分析相位延迟产生误差的原因．通过优化设计，入射角为54°，在1285～1345nm之间p，s波获得了270±1°的相移，同时也使反射率在99．5％以上．用离子束溅射技术制备相位延迟膜，用分光光度计测试了光谱特性和用椭偏仪测试了相位特性，在相应波段获得了262．4±1．8°的相移，同时也使反射率在99．6％以上．误差的主要来源是离子源工作特性会产生不均匀的过渡层和最