High speed 2x2 optical switch in silicon-on-insulator based on plasma dispersion effect

Based on free carrier plasma dispersion effect, a 2 x 2 optical switch is fabricated in a silicon-on-insulator substrate by inductively coupled-plasma technology and ion implantation. The device has a Mach-Zehnder interferometer structure, in which two directional couplers serve as the power splitter and combiner. The switch presents an insertion loss of 3.04 dB and a response time of 496 ns.

Fabrication and analysis of 2x2 thermo-optic SOI waveguide switch with low power consumption and fast response by anisotropy chemical etching

A low power consumption 2 x 2 thermo-optic switch with fast response was fabricated on silicon-on-insulator by anisotropy chemical etching. Blocking trenches were etched on both sides of the phase-shifting arms to shorten device length and reduce power consumption. Thin top cladding layer was grown to reduce power consumption and switching time. The device showed good characteristics, including a low switching power of 145 mW and a fast switching speed of 8 +/- 1 mus, respectively. Two-dimensional finite element method was applied to simulate temperature field in the phase-shifting arm instead of conventional one-dimensional method. According to the simulated result, a new two-dimensional index distribution of phase-shifting arm was determined. Consequently finite-difference beam propagation method was employed to simulate the light propagation in the switch, and calculate the power consumption as well as the switching speed. The experimental results were in good agreement with the theoretical estimations. (C) 2004 Elsevier B.V. All rights reserved.

A 2x2 optical switch based on plasma dispersion effect in silicon-on-insulator

Based on Mach-Zehnder interferometer (MZI) structure, a 2 x 2 optical switch is fabricated on SOI wafer. Modulation of the refractive index of MZI arms is achieved through free carriers plasma dispersion effect of silicon. The device presents an insertion loss as low as 3.44 dB and a response time as small as 300 ns. The crosstalk and extinction ratio are -15.54 and 14.9 dB, respectively. Detailed analysis and explanation of the operating behaviors are also presented. (C) 2005 Elsevier B.V. All rights reserved.

Simultaneous phase-shifting ellipsometry based on grating beamsplitter

Simultaneous phase-shifting ellipsometry based on a grating beamsplitter is presented. In the corresponding setup, an orthogonal grating and analyzer array are used. The latter is composed of four separate analyzers arranged in a 2x2 grid, the polarization axes of which are set to 0, 45, 90, and 135 deg. A mask allows only four diffracted beams of the fist order, having the same optical intensities, to pass. Each beam is incident on one of the analyzers of the array. The intensities of the four beams are simultaneously detected by a quadrant detector. The ellipsometric parameters are obtained using the four intensity signals. The feasibility of simultaneous phase shifting ellipsometry is thus demonstrated. (C) 2008 Society of Photo-Optical Instrumentation Engineers.

池养鲤和草鱼血液学指标的研究

1.鲤鱼和草鱼的血液细胞包含红血球、淋巴球、单核球、嗜中性球、嗜酸性球及纺锤细胞。没有见到嗜碱性球。2.鲤鱼及草鱼的红血球数及血红蛋白量,在正常条件下,与水中溶氧量及成熟系数成十分显著的负相关。成熟雌鲤的红血球数(y)与溶氧量(x1)及成熟系数(x2)的迥归公式为:y=122+2.9x1-1.2x2。3.性腺发育程度及生殖活动强烈地影响鱼类血液有形成分。在生殖季节雄鱼的红血球数及血红蛋白量比雌鱼高,红血球沉降率则相反。白血球则在生殖季节及性腺退化吸收时比较活跃,而在非生殖季节两性之间无明显差异。4.发育成

Research progresses of SOI optical waveguide devices and integrated optical switch matrix

SOI (silicon-on-insulator) is a new material with a lot of important performances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with conventional IC processes. Having the potential of OEIC monolithic integration, SOI based optoelectronic devices have shown many good characteristics and become more and more attractive recently. In this paper, the recent progresses of SOI waveguide devices in our research group are presented. By highly effective numerical simulation, the single mode conditions for SOI rib waveguides with rectangular and trapezoidal cross-section were accurately investigated. Using both chemical anisotropic wet etching and plasma dry etching techniques, SOI single mode rib waveguide, MMI coupler, VOA (variable optical attenuator), 2X2 thermal-optical switch were successfully designed and fabricated. Based on these, 4X4 and 8X8 SOI optical waveguide integrated switch matrixes are demonstrated for the first time.

Signal bandwidth of general N x N multimode interference couplers

Analytical expression of signal bandwidth of general straight and tapered N x N multimode interference (MMI) couplers is presented. The signal bandwidth is characterized as a function of mode relative energy, mode propagation delay time, and mode pulse broadening in the multimode section of MMI coupler. The model is used to evaluate the signal bandwidth of specific couplers. Results indicate that the signal bandwidth decreases seriously with the increase of channel number and channel guide space. Compared with the straight MMI coupler, the tapered MMI coupler has an improved signal bandwidth.