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Table of Contents
1 | Introduction | 1 |
1.1 | What is an Adiabatic Shear Band? | 1 |
1.2 | The Importance of Adiabatic Shear Bands | 6 |
1.3 | Where Adiabatic Shear Bands Occur | 10 |
1.4 | Historical Aspects of Shear Bands | 11 |
1.5 | Adiabatic Shear Bands and Fracture Maps | 14 |
1.6 | Scope of the Book | 20 |
2 | Characteristic Aspects of Adiabatic Shear Bands | 24 |
2.1 | General Features | 24 |
2.2 | Deformed Bands | 27 |
2.3 | Transformed Bands | 28 |
2.4 | Variables Relevant to Adiabatic Shear Banding | 35 |
2.5 | Adiabatic Shear Bands in Non-Metals | 44 |
3 | Fracture and Damage Related to Adiabatic Shear Bands | 54 |
3.1 | Adiabatic Shear Band Induced Fracture | 54 |
3.2 | Microscopic Damage in Adiabatic Shear Bands | 57 |
3.3 | Metallurgical Implications | 69 |
3.4 | Effects of Stress State | 73 |
4 | Testing Methods | 76 |
4.1 | General Requirements and Remarks | 76 |
4.2 | Dynamic Torsion Tests | 80 |
4.3 | Dynamic Compression Tests | 91 |
4.4 | Contained Cylinder Tests | 95 |
4.5 | Transient Measurements | 98 |
5 | Constitutive Equations | 104 |
5.1 | Effect of Strain Rate on Stress-Strain Behaviour | 104 |
5.2 | Strain-Rate History Effects | 110 |
5.3 | Effect of Temperature on Stress-Strain Behaviour | 114 |
5.4 | Constitutive Equations for Non-Metals | 124 |
6 | Occurrence of Adiabatic Shear Bands | 125 |
6.1 | Empirical Criteria | 125 |
6.2 | One-Dimensional Equations and Linear Instability Analysis | 134 |
6.3 | Localization Analysis | 140 |
6.4 | Experimental Verification | 146 |
7 | Formation and Evolution of Shear Bands | 155 |
7.1 | Post-Instability Phenomena | 156 |
7.2 | Scaling and Approximations | 162 |
7.3 | Wave Trapping and Viscous Dissipation | 167 |
7.4 | The Intermediate Stage and the Formation of Adiabatic Shear Bands | 171 |
7.5 | Late Stage Behaviour and Post-Mortem Morphology | 179 |
7.6 | Adiabatic Shear Bands in Multi-Dimensional Stress States | 187 |
8 | Numerical Studies of Adiabatic Shear Bands | 194 |
8.1 | Objects, Problems and Techniques Involved in Numerical Simulations | 194 |
8.2 | One-Dimensional Simulation of Adiabatic Shear Banding | 199 |
8.3 | Simulation with Adaptive Finite Element Methods | 213 |
8.4 | Adiabatic Shear Bands in the Plane Strain Stress State | 218 |
9 | Selected Topics in Impact Dynamics | 229 |
9.1 | Planar Impact | 230 |
9.2 | Fragmentation | 237 |
9.3 | Penetration | 244 |
9.4 | Erosion | 255 |
9.5 | Ignition of Explosives | 261 |
9.6 | Explosive Welding | 268 |
10 | Selected Topics in Metalworking | 273 |
10.1 | Classification of Processes | 273 |
10.2 | Upsetting | 276 |
10.3 | Metalcutting | 286 |
10.4 | Blanking | 293 |
Appendices | 297 | |
A | Quick Reference | 298 |
B | Specific Heat and Thermal Conductivity | 301 |
C | Thermal Softening and Related Temperature Dependence | 312 |
D | Materials Showing Adiabatic Shear Bands | 335 |
E | Specification of Selected Materials Showing Adiabatic Shear Bands | 341 |
F | Conversion Factors | 357 |
References | 358 | |
Author Index | 369 | |
Subject Index | 375 |
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系统地研究了光学研磨过程中,磨料粒径、载荷大小以及机床转速对钕玻璃表面及亚表面损伤的影响。结果表明,机床转速和载荷基本不改变材料表面粗糙度,而较大载荷或较低机床转速产生较大的亚表面缺陷,表面粗糙度和亚表面缺陷缺陷深度基本与最大磨料粒径呈正比,载荷增倍使亚表面缺陷与表面粗糙度的常数比值增加0.05。研究结果为钕玻璃加工工艺改进提供了参考依据。
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A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.
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于G批量导入至Hzhangdi
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于G批量导入至Hzhangdi
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在850nm波长垂直腔面发射激光器的基础上制备了纳米孔径垂直腔面发射激光器.当小孔尺寸为400nm×400nm时,在25mA驱动电流下,其最大输出光功率达到了0.3mw,功率密度约为2mW/μm~2,文中介绍了纳米孔径垂直腔面发射激光器的制备工艺,并对它的光谱特性和寿命特性进行了分析。
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于2010-11-23批量导入