载流圆锥薄壳的磁弹性应力与变形分析

在建立旋转壳体的非线性磁弹性运动方程的基础上，研究了电磁场和机械载荷联合作用下载流圆锥薄壳的磁弹性效应．通过算例，得到了载流圆锥薄壳的位移及应力与通电电流强度之间的关系，解决了圆锥薄壳顶点处的奇异性问题，给出了轴对称条件下的数值解．计算结果表明：改变通电电流强度，可以改变载流圆锥薄壳的应力与变形状态，达到控制圆锥薄壳的受力与变形的目的．

尺度缩小合成孔径激光成像雷达的孔径合成实验

设计了一种尺度缩小的合成孔径激光成像雷达(SAIL),在实验室平台上模拟实施远场传输条件,相应地解决了波前测量和外差质量监视技术,实现了一个目标点的方位向孔径合成实验,实验结果与理论预测相近。

正弦相位调制的频域光学相干层析成像

提出一种基于正弦相位调制的频域光学相干层析成像,利用正弦相位调制干涉术探测复频域干涉条纹的实部和虚部,重建复频域干涉条纹。对该复频域干涉条纹作逆傅里叶变换后,消除了频域光学相干层析成像中存在的复共轭镜像以及直流背景和自相干噪声。对玻璃片样品进行了层析成像实验。实验结果表明,采用正弦相位调制的频域光学相干层析成像,将可利用的成像深度范围扩大到原来的2倍,实现了全深度探测的频域光学相干层析成像。

乳腺增生病p53基因第5外显子突变及其蛋白表达

目的 :探讨 p5 3基因在乳腺癌发生早期的作用。 方法 :用免疫组化方法检测 36例乳腺单纯性增生、31例不典型增生、14例原位癌和 16例浸润癌中 p5 3蛋白的表达 ,用PCR SSCP检测了上述组织中 p5 3基因第 5外显子突变。 结果 :p5 3蛋白在单纯性增生、不典型增生、导管内癌、浸润癌中的表达率分别为 0、2 2 6 % (7/ 31)、42 8% (6 / 14)、5 0 % (8/ 16 ) ,PCR SSCP在各组中均未检测到该基因第 5外显子突变。结论 :乳腺癌发生早期阶段有 p5 3基因的参与 ,但与第 5外显子突变无明显关系

湖泊磷酸酶与微生物活性对内源磷负荷的贡献及其与富营养化的关系

磷酸酶可通过增加磷的生物可利用性促进富营养化过程,在太湖、龙阳湖与莲花湖探讨了这种机制。磷酸酶活性与磷营养水平以及叶绿素a浓度相关。反胶团酶学方法的实验结果表明,溶解态磷酸酶稳定性的不同可能源于酶分子大小、结构与活性基团的差异。太湖微囊藻水华发生处间隙水溶解态磷酸酶在胶团中的活性高且稳定,溶解反应性磷浓度较低,沉积物不同形态磷的含量与好气性细菌数量均低,且呼吸强度明显较高,无机磷与有机磷细菌以及其它微生物均在表层富集,却极少见诸于沉积物。因此,来自酶促水解或其它途径的大量内源磷可能在厌氧状态下经上覆水随细

Cloning and characterization of interferon stimulated genes Viperin and ISG15, and their promoters from snakehead Channa argus

By suppression subtractive hybridization, rapid amplification of cDNA ends and gene walking methods, interferon stimulated genes (ISGs), Viperin and ISG15, and their promoters have been cloned and characterized from snakehead Channa argus. The Viperin cDNA was found to be 1474 nt and contain an open reading frame (ORF) of 1059 nt that translates into a putative peptide of 352 amino acid (aa). The putative peptide of Viperin shows high identity to that in teleosts and mammals except for the N-terminal 70 aa. The ISG15 cDNA was found to be 758 nt and contain an ORF of 468 nt that translates into a putative peptide of 155 aa. The putative peptide of ISG15 is composed of two tandem repeats of ubiquitin-like (UBL) domains, and a canonical conjugation motif (LRGG) at C-terminal. Viperin and ISG15 promoter regions were characterized by the presence of interferon stimulating response elements (ISRE) and gamma-IFN activation sites (GAS). ISRE is a feature of IFN-induced gene promoter and partially overlaps interferon regulatory factor (IRF) 1 and IRF2 recognition sites. GAS is responsible for the gamma-IFN mediated transcription. One conserved site for NF-kappa B was found in the promoter region of Viperin. This is the first report of conservative binding motif for NF-kappa B in accordance with the consensus sequence (GGGRN-NYYCC) among teleost ISG promoters. Moreover, there were also TATA, CAAT and Sp1 transcription factor sites in Viperin and ISG15 promoters. In 5' untranslated region (UTR), snakehead ISG15 gene contains a single intron, which differs from Viperin gene. The transcripts of Vipeirn and ISG15 mRNA were mainly expressed in head kidney, posterior kidney, spleen and gill. The expression levels in liver were found to increase obviously in response to induction by IFN-inducer poly I : C.

Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes

This paper investigates the dependence of current-voltage characteristics of AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes (RTDs) on spacer layer thickness. It finds that the peak and the valley current density J in the negative differential resistance (NDR) region depends strongly on the thickness of the spacer layer. The measured peak to valley current ratio of RTDs studied here is shown to improve while the current density through RTDs decreases with increasing spacer layer thickness below a critical value.

Effects of Sb, N, and period on the electronic properties of GaAs/GaInNAsSb superlattices

We have calculated the bond distributions and atom positions of GaAs/GalnNAsSb superlattices using Keating's semiempirical valence force field (VFF) model and Monte Carlo simulation. The electronic structures of the superlattices are calculated using folded spectrum method (FSM) combined with an empirical pseudopotential (EP) proposed by Williamson et al.. The effects of N and Sb on superlattice energy levels are discussed. We find that the deterioration of the optical properties induced by N can be explained by the localization of the conduction-band states around the N atom. The electron and hole effective masses of the superlattices are calculated and compared with the effective masses of the bulk GaAs and GaInAs.

HCl/HF/CrO3溶液对 InGaAs/InGaAsP的选择性湿法刻蚀--应用于楔形结构的制备

利用动态掩膜湿法腐蚀技术,研究了HCl/HF/CrO3溶液对与InP衬底晶格匹配的InxGa1-xAs1-yPy(y=0,0.2,0.4,0.6)材料的腐蚀特性.对于HCl(36wt%)/HF(40wt%)/CrO3(10wt%)的体积比为x∶0.5∶1的溶液,随着x由0增加到1.25,相应的腐蚀液对In0.53Ga0.47As/In0.72Ga0 28As06P0.4的选择性由42.4降到1.4;通过调节腐蚀液的选择性,在In072Ga0.28As06P0.4外延层上制备出了倾角从1.35°到35.9°的各种楔形结构;当x为0.025和1.25时,相应的In0.72Ga0.28As0.6P0.4腐蚀表面的均方根粗糙度分别为1.1nm和1.6nm.还研究了溶液的组分与InxGa1-xAs1-yPy(y=0,0.2,0.4)的腐蚀速率间的关系,并对腐蚀机理进行了分析.

N,Sb和单分子层数对GaAs/GaInNAsSb超晶格性能的影响

用Keating的价力场(valence force field)模型和蒙特卡罗方法计算了GaAs/GaInNAsSb超晶格中键的分布、原子的精确位置以及应变.用折叠谱法(folded spectrum method)结合Williamson经验赝势法计算了GaAs/GaInNAsSb超晶格应变条件下的电子结构.讨论了N和Sb原子以及超晶格单分子层数对电子结构的影响.发现导带底电子态在N原子周围的局域化减小了光跃迁矩阵元,从而影响了该超晶格的发光性能.计算并讨论了超晶格的电子和空穴的有效质量.