Piezoelectricity Of Zno Films Prepared By Sol-Gel Method

ZnO piezoelectric thin films were prepared on crystal substrate Si(111) by sol-gel technology, then characterized by scanning electron microscopy, X-ray diffraction and atomic force microscopy (AFM). The ZnO films characterized by X-ray diffraction are highly oriented in (002) direction with the growing of the film thickness. The morphologies, roughness and grain size of ZnO film investigated by AFM show that roughness and grain size of ZnO piezoelectric films decrease with the increase of the film thickness. The roughness dimension is 2.188-0.914 nm. The piezoelectric coefficient d(33) was investigated with a piezo-response force microscope (PFM). The results show that the piezoelectric coefficient increases with the increase of thickness and (002) orientation. When the force reference is close to surface roughness of the films, the piezoelectric coefficient measured is inaccurate and fluctuates in a large range, but when the force reference is big, the piezoelectric coefficient d(33) changes little and ultimately keeps constant at a low frequency.

Piezoelectricity of ZnO films prepared by sol-gel method

ZnO piezoelectric thin films were prepared on crystal substrate Si(111) by sol-gel technology, then characterized by scanning electron microscopy, X-ray diffraction and atomic force microscopy (AFM). The ZnO films characterized by X-ray diffraction are highly oriented in (002) direction with the growing of the film thickness. The morphologies, roughness and grain size of ZnO film investigated by AFM show that roughness and grain size of ZnO piezoelectric films decrease with the increase of the film thickness. The roughness dimension is 2.188-0.914 nm. The piezoelectric coefficient d(33) was investigated with a piezo-response force microscope (PFM). The results show that the piezoelectric coefficient increases with the increase of thickness and (002) orientation. When the force reference is close to surface roughness of the films, the piezoelectric coefficient measured is inaccurate and fluctuates in a large range, but when the force reference is big, the piezoelectric coefficient d(33) changes little and ultimately keeps constant at a low frequency.

光谱稳定性对直接探测多普勒测风激光雷达的影响研究

The wind error of the double-edge technique Doppler lidar due to the instability of injection-seeding solid laser and the drift of interferometer s spectrum was analyzed. Corresponding numerical simulation indicated that if the wind error of 1 m/s was achieved, the unsuccessful injection-seeding pulses should be less than 0.06% in integration time of 5 min. (30000 pulses). In the respect of spectrum drift of the interferometer, double temperature control systems were used and the accuracy of minus or plus 0.002°C was obtained, corresponding to the wind error of minus or plus 0.226 m/s. Monitoring of buildup time of the injection-seeding laser and temperature of the interferometer was significantly to improve the invertion accuracy of wind error by rejecting the data with frequency jumping and drifting. Researches of injection-seeding and spectrum stability of the interferometer were practical for the development of double-edge wind lidar.}

MOCVD growth and properties of ZnO thin films on LiNbO3 substrates

ZnO thin films were grown on (0001)LiNbO3 substrates by the MOCVD technique. The substrate temperatures during growth were changed from 400 to 600 degrees C. The X-ray diffraction (XRD) pattern of the ZnO film showed a strong [002] reflection peak, and the peak intensity was dependent on substrate temperature. The ZnO columnar grains were highly oriented along the (002) direction when the film processing temperature was 600 degrees C. The optical transmission and PL results also indicated that highest crystalline quality of the ZnO films could be obtained at elevated temperatures. (c) 2005 Elsevier B.V. All rights reserved.

在钛酸锶衬底上外延生长ZnO薄膜及其性能研究

用脉冲激光淀积法（PLD）在（111）面SrTiO3衬底上外延生长ZnO单晶薄膜。样品分别在衬底温度为350℃、500℃、600℃下外延生长。X射线衍射（XRD）的结果表明,所得的ZnO单晶薄膜结晶性能好,只出现（002）和（004）两个衍射峰,（002）峰的半高宽度（FWHM）为0.23°。在荧光光谱中我们只观察到来源于带边激子跃迁的强UV发射,并且随着生长温度的升高,紫外峰的强度逐渐增强。样品的SEM图像表明所得ZnO薄膜表面平整,晶粒均匀。衬底温度为600℃时,所得到的ZnO薄膜结构完整,晶粒尺寸最

Structure and UV emission of nanocrystal ZnO films by thermal oxidation of ZnS films

ZnO films prepared by the thermal oxidation of the ZnS films through thermal evaporation are reported. The as-deposited ZnS films have transformed to ZnO films completely at 400 degrees C. The 400-700 degrees C annealed films with a preferential c-axis (002) orientation have a hexagonal wurtzite structure. The band gap of ZnO films shifts towards longer wavelength with the increase of the annealing temperature. The relationship between the band gap energy of ZnO films and the grain size is discussed. The shift of the band gap energy can be ascribed to the quantum confinement effect in nanocrystal ZnO films. The photoluminescence spectra of ZnO films show a dominant ultraviolet emission and no deep level or trap state defect emission in the green region. It confirms the absence of interstitial zinc or oxygen vacancies in ZnO films. These results indicate that ZnO film prepared by this simple thermal oxidation method is a promising candidate for optoelectronic devices and UV laser. (c) 2005 Elsevier BN. All rights reserved.

Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films

The effects of oxygen partial pressure on the structure and photoluminescence (PL) of ZnO films were studied. The films were prepared by direct current (DC) reactive magnetron sputtering with various oxygen concentrations at room temperature. With increasing oxygen ratio, the structure of films changes from zinc and zinc oxide phases, single-phase ZnO, to the (002) orientation, and the mechanical stresses exhibit from tensile stress to compressive stress. Films deposited at higher oxygen pressure show weaker emission intensities, which may result from the decrease of the oxygen vacancies and zinc interstitials in the film. This indicates that the emission in ZnO film originates from the oxygen vacancy and zinc interstitial-related defects. From optical transmittance spectra of ZnO films, the plasma edge shifts towards the shorter wavelength with the improvement of film stoichiometry. (C) 2004 Elsevier B.V. All rights reserved.

Influences of CO2 laser irradiation on the structure and photoluminescence of zinc oxide thin films

CO2 laser irradiation experiments on ZnO thin films are reported. The structural, optical, luminescent and vibrational properties of the samples were investigated by X-ray diffraction (XRD), transmittance, photoluminescence (PL) and Raman measurements. XRD results show that the crystalline of the irradiated films was improved. The (002) peaks of irradiated ZnO films shift to. higher 20 angles due to the stress relaxation in the case of laser beam irradiation. From optical transmittance spectra, all films exhibit high transmittance in the visible range, the optical band edge of irradiated films showed a redshift compared with that of as-grown films. Compared with the as-grown films, the photoluminescence emission (in particular the relative intensities of visible emissions) intensities of irradiated samples enhanced. In the Raman scattering spectral both the A I. and E modes exhibited slight Raman blueshift. (c) 2005 Elsevier B.V. All rights reserved.

The effects of oxygen partial pressure on the optical absorption edge and the UV emission energy of ZnO films

The optical absorption edge and ultraviolet (UV) emission energy of ZnO films deposited by direct current (DC) reactive magnetron sputtering at room temperature have been investigated. With the oxygen ratio increasing, the structure of films changes from zinc and zinc oxide coexisting phase to single-phase ZnO and finally to the highly (002) orientation. Both the grain size and the stress of ZnO film vary with the oxygen partial pressure. Upon increasing the oxygen partial pressure in the growing ambient, the visible emission in the room-temperature photoluminescence spectra was suppressed without sacrificing the band-edge emission intensity in the ultraviolet region. The peaks of photoluminescence spectra were located at 3.06---3.15 eV. From optical transmittance spectra of ZnO films, the optical band gap edge was observed to shift towards shorter wavelength with the increase of oxygen partial pressure.

离子束辅助反应制备的氧化铪薄膜特性

采用电子束直接蒸发氧化铪、无辅助电子束反应蒸发和离子束辅助反应蒸发金属铪3种沉积方式制备了单层HfO2薄膜,对样品的光学性能、结构特性以及激光损伤特性进行了研究。实验结果表明:通过反应沉积的方法可以有效减少缺陷产生并改善均匀性,施加离子辅助可以提高薄膜的折射率,在一定条件下还可以有效地降低吸收,但激光损伤阈值仍未达到直接采用氧化铪制备的水平;晶体结构方面,离子辅助条件下可以获得单斜相氧化铪薄膜,并且随着轰击能量的提高由(002)面的择优取向向(-111)面转变。

Annealing effects on the optical and structural properties of Al2O3/SiO2 films as UV antireflection coatings on 4H-SiC substrates

Al2O3/SiO2 films have been prepared by electron-beam evaporation as ultraviolet (UV) antireflection coatings on 4H-SiC substrates and annealed at different temperatures. The films were characterized by reflection spectra, ellipsometer system, atomic force microscopy (AFM), X-ray diffraction (XRD) and Xray photoelectron spectroscopy (XPS), respectively. As the annealing temperature increased, the minimum reflectance of the films moved to the shorter wavelength for the variation of refractive indices and the reduction of film thicknesses. The surface grains appeared to get larger in size and the root mean square (RMS) roughness of the annealed films increased with the annealing temperature but was less than that of the as-deposited. The Al2O3/SiO2 films maintained amorphous in microstructure with the increase of the temperature. Meanwhile, the transition and diffusion in film component were found in XPS measurement. These results provided the important references for Al2O3/SiO2 films annealed at reasonable temperatures and prepared as fine anti-reflection coatings on 4H-SiC-based UV optoelectronic devices. (c) 2008 Elsevier B.V. All rights reserved.

玉米高产优质生产中若干生理生态问题的研究

玉米（Zea mays L.）是我国十分重要粮食、饲料和工业原料作物，种植区域覆盖我国大部分农业区。随着玉米品种改良和新栽培技术的应用，我国玉米产量大幅度增加。自1950s以来，我国玉米产量递增幅度为126kg/hm2/yr。在玉米产量提高过程中，单叶光合作用与产量之间存在什么样的关系？当代玉米品种的品质和养分利用效率如何？高密度种植条件下是否存在“根系拥挤”及如何调控等。为探讨上述科学问题，本研究选择中国北方常见的大田玉米品种，在高肥力自然光照条件下，探讨玉米高产优质栽培过程中生理生态特征的变化趋势，以指导科学育种和栽培。主要研究结果如下： 　　1）光合与产量的演变我国 1950s、1970s、1990s等不同年代推广的玉米品种中，当代品种叶片光合速率高且高值持续期长，光合色素叶绿素a、叶绿素b、类胡萝卜素等的含量高且持续时间长，与光合有关的蒸腾速率（E.）、细胞间隙CO2浓度（Ci.）、气孔导度（gs）等也有较大改良，中下部叶片尤其明显;在生育后期，当代品种具有更高的光合优势。老品种饱和光合速率(Psat)在灌浆期下降，并非RuBPCase 和PEPCase的活性降低，而是由于叶绿素含量和可溶性蛋白含量的降低。在花后期间，由于PS2功能的下降，造成了光合能力下降，而现代品种的PS2 功能在衰老前一致保持旺盛状态。 　　老品种光合特征对缺氮的反应表现更敏感。花后缺氮光合作用下降是非气孔限制的，因为气孔导度和胞间CO2浓度没有发生明显的变化。其主要原因是缺素造成老品种叶片早衰，叶绿素含量、可溶性蛋白含量、PEP羧化酶活性下降。现代品种表现较强的抗衰老能力，其N素利用效用高于老品种。我国玉米产量的大幅度提高在很大程度上应归功于叶片光合性能的改良。 　　随玉米品种更替，群体光合速率增强，群体光合衰减率降低，呼吸消耗所占总光合的百分率下降。灌浆期当代品种中下部叶片的群体光合速率明显高于老品种。种植密度是影响玉米群体光合速率的主要因素，在高中低三种密度条件下，当代品种均有较高的群体光合速率，表现出耐密性强、适应性广、源足库大、产量高的特点。 　　2）高油玉米的产量受到叶源大小和叶源活力的双重限制在 1.5 株/m2密度下，与普通玉米相比较，高油玉米单株籽粒产量显著低于普通玉米，产量构成中穗粒数差异不显著，千粒重较低（P＜0.01）;两类型玉米的单株库容量相当，高油玉米籽粒灌浆速率小，籽粒充实度低，单粒重对叶源相对减少（剪叶）或相对增多（疏库）的反应比普通玉米更为敏感，其产量受到同化产物供应（叶源）相对不足的限制。高油玉米授粉后的叶面积、叶面积持续期小，叶片含氮量和光合速率较低，说明高油玉米的产量受到叶源活力（光合速率）小和叶源数量少的双重限制。 　　3）我国北方玉米品种的个体产量潜力、氮素利用效率及籽粒与秸秆粗蛋白质含量在充分发挥个体生产潜力的低密度条件下，我国北方1990s 以来大面积种植的50个玉米主栽品种中，个体产量潜力和氮素利用效率高度正相关(P=0.01)，而子粒千粒重与NUE 呈显著性负相关(P=0.002)。对玉米产量和氮素利用效率进行分层聚类，可将北方玉米品种划分为高产高NUE 型、低产低NUE 型和中间型，高产高NUE 型玉米品种相对较少，仅占24%。籽粒粗蛋白质含量（CPC）与秸秆CPC 相关性不显著（P＞0.05）。对籽粒和秸秆的CPC 进行分层聚类，将北方玉米品种划分为籽粒高秸秆低型、籽粒与秸秆双低型和籽粒与秸秆双高型，CPC 双高型品种相对较少，仅占20%。 　　4）玉米根系拥挤效应对产量影响的生理生态机制及其调控随玉米品种更替根系的空间分布呈“横向紧缩，纵向延伸”的特点。当代三类型玉米根系分布特性与株型、穗型相关。紧凑型品种根系分布深，下层根系所占比率大，适合密植，群体产量潜力大;平展大穗型品种根量多，分布较浅，在低密度下可获得较高的个体生产力，但不适合密植，群体产量潜力小。 　　“根系拥挤”显著影响玉米产量，减小根系横向伸展空间，下层土壤中的根系分配比率增多。在地上部充分生长条件下，紧凑型品种横向空间为30-50cm即可满足要求，平展型品种大于50cm;紧凑型品种对纵向空间受限制的反应更为敏感，平展型品种对横向空间受限制的反应更为敏感。“根系拥挤”影响根系活性、分布、氮素吸收利用和花后光合与14C同化物的分配。 　　在根系受限制条件下，增施肥料产量提高，根系总重增加，增加了根系在深层土壤（60-100cm）中的根系比率，显著增加了根系的TTC 还原量、SOD、CAT、POD活性。土壤加沙，根量减少，但根系TTC 还原量增加、产量提高，提高幅度以大穗型品种更为显著。 　　随种植密度增加耕层根系密度与群体产量同步增大，各类品种均在最高根系密度下获得最高产量。根系负荷的籽粒产量潜力三类型品种存在极大差异，在一定范围内增大种植密度，根系伸展空间减小，群体产量提高，紧凑大穗型品种产量最高，品种的耐密性是限制根系负荷籽粒产量潜力的主导因素。因此，培育株型紧凑、耐密性强、大穗玉米良种，采取有效的调控措施是玉米进一步高产的主攻方向。 　　5）我国夏玉米高产田的培创理论研究与实践相结合，2005 年在我国华北地区的山东莱州培创出籽粒实产21 042.9kg/hm2 （ 14% 含水量， 实收面积=45.7m×15.9m=726.63m2）的夏玉米高产纪录。主要采用以增加密度为保障的“群体结构性挖潜”和以提高整齐度为保障的“个体功能性挖潜”途径，生理生态指标包括：选用紧凑抗倒耐密植品种DH3719，种植密度102 030 株/hm2，收获密度98 610 株/hm2，花后具有较长的叶面积高值持续期，达60d以上，叶面积指数最大为6.53，收获2.59。上部叶片光合值对外界光强度变化敏感，其光合峰值出现时间提前，而后迅速衰减;中部叶片光合值的降低较慢，下部叶片变幅最小，可能是长期处于争光环境表现出的生态适应性。粒叶比0.32，经济系数0.542，单株产量216g，千粒重375.1g。

GENETIC DIVERSITY IN THE CHINESE PANGOLIN (MANIS-PENTADACTYLA) - INFERRED FROM RESTRICTION ENZYME ANALYSIS OF MITOCHONDRIAL DNAS

Two different forms of Chinese pangolins can be recognized according to the color of their scales, i.e., brown and dusky. We analyzed mitochondrial DNA (mtDNA) purified from the livers of seven dusky and six brown Chinese pangolins from the same locality, using cleavage patterns from 19 restriction enzymes. From the 19 6-bp recognition enzymes used, 51-56 sites were observed. By combining the cleavage patterns for each enzyme, the 13 samples were classified into four restriction types: two in dusky and two in brown Chinese pangolins. The estimated number of nucleotide substitutions per site in dusky and brown types is 0.002, and that between dusky and brown types is 0.012. Divergence between brown and dusky forms began 0.6 Myr ago, provided the mean rate of sequence divergence is 0.02 per Myr in mtDNA. Our results suggest that there is considerable divergence in Chinese pangolins, and brown and dusky Chinese pangolins may be quite different forms or, at least, belong to different maternal groups.

树突状细胞在AIDS灵长类动物模型疾病进程中的作用

非人灵长类动物模型在艾滋病(AIDS)发病机制、传播途径、疫苗和药物等方面的研究中具有重要作用。树突状细胞(DC)作为最重要连接先天免疫与获得性免疫的抗原递呈细胞,在AIDS发病进程中扮演着重要的角色。研究非人灵长类AIDS动物模型中DC亚群数量、表型以及功能的变化,对揭示AIDS发病机制具有十分重要的意义。该文将重点总结近些年来DC亚群在AIDS动物模型发病机制中的作用研究进展,为以后的研究提供思路。

The Influence of Age and Sex on the Cell Counts of Peripheral Blood Leukocyte Subpopulations in Chinese Rhesus Macaques

Non-human primates such as Chinese rhesus macaques are the favorable models for preclinical study of potential therapeutic drugs, vaccines and mechanisms of human diseases. Little is known about the normal levels of leukocyte subpopulations of Chinese rhe