Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes

We have investigated the optical properties of asymmetric multiple layer stacked self-assembled InAs quantum dot with different interlayer. We found that asymmetric multiple stacked QD samples with In0.2Ga0.8As + GaAs interlayer can afford a 180nm flat spectral width with strong PL intensity compared to other samples at room temperature. We think this result is due to the introduction of In0.2Ga0.8As strain-reducing layer. Additionally, for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for quantum-dot superluminescent diodes.

~(57)Fe,~(119)Sn掺杂Bi_2Sr_2Ca_(n-1)Cu_nO_(2n+4)的化学键性质和Mssbauer谱位移研究

利用电介质的平均能带模型计算了Bi2 Sr2 Can- 1CunO2n +4 (n =1,2 ,3)的化学键参数 .应用由共价性和极化率定义的化学环境因子计算了57Fe和119Sn在Bi2 Sr2 Can - 1CunO2n +4 中的M ssbauer同质异能位移 ,确定了57Fe和119Sn在Bi2 Sr2 Can- 1CunO2n +4 中的价态和占位情况 .