16-and 18-electron Cp*Rh complexes with 1,2-dicarba-closo-dodecabofane(12)-1,2-dichalcogenolato ligands, as studied by multinuclear magnetic resonance

The reaction of [Cp*RhCl2](2) 1 with dilithium 1,2-dicarba-closo-dodecaborane(12)-1,2-dithiolate (a) and -diselenolate (b) afforded the 16-electron rhodium(III) half-sandwich complexes Cp*Rh[E2C2(B10H10)] [E=S (3a), Se (3b)]. The 18-electron trimethylphosphane rhodium(III) half-sandwiches Cp*Rh(PMe3)[E2C2(B10H10)] 4a-c were prepared from the reaction of Cp*RhCl2(PMe3) 2 with the same dichalcogenolates, including the ditelluride (c). The complexes 4a,b could also be obtained from the reaction of 3a,b with trimethylphosphane. The molecular geometry of 4b was determined by X-ray structural analysis. The 16-electron complexes 3 an monomeric in solution as shown by multinuclear magnetic resonance (H-1-, B-11-, C-13-, P-31- Se-77-, Rh-103-, Te-125-NMR). also in comparison with the data for the trimethylphosphane analogues 4a-c and for 6a in which the rhodium bears the eta(5)-1,3-C5H3 Bu-t(2) ligand. The Rh-103 nuclear shielding is reduced by 831 ppm (3a) and 1114 ppm (3b) with respect to the 18-electron complexes 4a,b. Similarly, the Se-77 nuclear shielding in 3b is reduced by 676.4 ppm with respect to that in 4b. (C) 1999 Elsevier Science S.A. All rights reserved.

Correlation of electrical and optical properties in dually Cd+ and N+ ion-implanted GaAs

Cd in GaAs is an acceptor atom and has the largest atomic diameter among the four commonly-used group-II shallow acceptor impurities (Be, Mg, Zn and Cd). The activation energy of Cd (34.7 meV) is also the largest one in the above four impurities, When Cd is doped by ion implantation, the effects of lattice distortion are expected to be apparently different from those samples ion-implanted by acceptor impurities with smaller atomic diameter. In order to compensate the lattice expansion and simultaneously to adjust the crystal stoichiometry, dual incorporation of Cd and nitrogen (N) was carried out into GaAs, Ion implantation of Cd was made at room temperature, using three energies (400 keV, 210 keV, 110 keV) to establish a flat distribution, The spatial profile of N atoms was adjusted so as to match that of Cd ones, The concentration of Cd and N atoms, [Cd] and [N] varied between 1 x 10(16) cm(-3) and 1 x 10(20) cm(-3). Two type of samples, i.e., solely Cd+ ion-implanted and dually (Cd+ + N+) ion-implanted with [Cd] = [N] were prepared, For characterization, Hall effects and photoluminescence (PL) measurements were performed at room temperature and 2 K, respectively. Hall effects measurements revealed that for dually ion-implanted samples, the highest activation efficiency was similar to 40% for [Cd] (= [N])= 1 x 10(18) cm(-3). PL measurements indicated that [g-g] and [g-g](i) (i = 2, 3, alpha, beta,...), the emissions due to the multiple energy levels of acceptor-acceptor pairs are significantly suppressed by the incorporation of N atoms, For [Cd] = [N] greater than or equal to 1 x 10(19) cm(-3), a moderately deep emission denoted by (Cd, N) is formed at around 1.45-1.41 eV. PL measurements using a Ge detector indicated that (Cd, N) is increasingly red-shifted in energy and its intensity is enhanced with increasing [Cd] = [N], (Cd, N) becomes a dominant emission for [Cd] = [N] = 1 x 10(20) cm(-3). The steep reduction of net hole carrier concentration observed for [Cd]/[N] less than or equal to 1 was ascribed to the formation of (Cd, N) which is presumed to be a novel radiative complex center between acceptor and isoelectronic atoms in GaAs.

Preparation and Electrical Properties of New Oxide Ion Conductors Ce6-xGdxMoO15-delta (0.0 <= x <= 1.8)

A series of oxide ion conductors Ce6-xGdxMoO15-delta (0.0 <= x <= 1.8) have been prepared by the sol-gel method. Their properties were characterized by differential thermal analysis/thermogravimetry (DTA/TG), X-ray diffraction (XRD), Raman, IR, X-ray photoelectron spectroscopy (XPS), and AC impedance spectroscopy. The XRD patterns showed that the materials were single phase with a cubic fluorite structure. The conductivity of Ce6-xGdxMoO15-delta increases as x increases and reaches the maximum at x = 0.15. The conductivity of Ce4.5Gd1.5MoO15-delta is sigma(t) = 3.6 x 10(-3) S/cm at 700 degrees C, which is higher than that of Ce4.5/6Gd1.5/6O2-delta (sigma(t) = 2.6 x 10(-3) S/cm), and the corresponding activation energy of Ce4.5Gd1.5MoO15-delta (0.92 eV) is lower than that of Ce4.5/6Gd1.5/6O2-delta (1.18 eV).

Judd-Ofelt analysis of spectra and experimental evaluation of laser performance of Tm3+ doped Lu2SiO5 crystal

This paper reports that the TM3+:Lu2SiO5 (Tm:LSO) crystal is grown by Czochralski technique. The room-temperature absorption spectra of Tm:LSO crystal are measured on a b-cut sample with 4 at.% thulium. According to the obtained Judd-Ofelt intensity parameters Omega(2)=9.3155 x 10(-20) cm(2), Omega(4)=8.4103 x 10(-20) cm(2), Omega(6)=1.5908 x 10(-20) cm(2), the fluorescence lifetime is calculated to be 2.03 ms for F-3(4) -> H-3(6) transition, and the integrated emission cross section is 5.81 x 10(-18) cm(2). Room-temperature laser action near 2 mu m under diode pumping is experimentally evaluated in Tm:LSO. An optical-optical conversion efficiency of 9.1% and a slope efficiency of 16.2% are obtained with continuous-wave maximum output power of 0.67 W. The emission wavelengths of Tm:LSO laser are centred around 2.06 mu m with spectral bandwidth of similar to 13.6 nm.

青蒿素含量影响因子分析及青蒿生殖结构的研究

由于青蒿中青蒿素含量很低，造成生产上成本过高，限制了青蒿素的应用。因此找到青蒿素含量的影响因子，并利用这些因子提高青蒿素含量是十分必要的。 研究青蒿有性生殖过程和生殖结构能够为青蒿遗传育种方面的研究提供理论依据。 利用青蒿高产株系001的茎段作为外植体，通过诱导丛生芽的方法得到无性克隆系s．，利用s．进行了青蒿素含量影响因子的研究。发现在Hoagland培养液中添加0. 44mg/L浓度的ZriS04.7H20,5.72 mg/L的HB03,0.32 mg/L的CuS04.5H20或者5uLmol／L的茉莉酸甲酯时能够明显提高青蒿素含量。 一些试验结果表明青蒿素含量不但受到培养条件的影响，而且和青蒿自身的生长发育有很大的关系。青蒿素含量在营养生长阶段随着青蒿的生长而逐步提高，当每天日照长度短于临界日长一16.5小时，青蒿进入生殖生长阶段，青蒿素含量短日照处理的第9-18天最高，而这一阶段也恰好是青蒿花蕾出现和发育的时期，此后青蒿素含量持续变低。青蒿素在青蒿植株不同器官中含量不同，其中叶片青蒿素含量最高，花蕾中也较高，但茎中含量极低。在不同部位的叶片中含量由高到低的顺序为中部叶片》下部叶片》上部叶片。青蒿植株不同部位器官中青蒿素含量的差异可能和这些部位腺毛数量的差异有关。 遗传差异是导致青蒿各个植株间青蒿素含量差异的主要原因。对青蒿素低产（02卜1，021-5）高产02卜18, 02卜19, 021-20）的五个青蒿株系进行了RAPD研究，以中间型产量02卜g和02卜d两个株系作对照。用OPRON公司的A，B，c，D，K五组100条随机引物进行PCR扩增。发现OPA15 (5' TTCCGAACCC 3')能在所有高产株系中扩增到一条lOOObp的条带，而在低产株系中则扩增不到这条带。这个条带很可能是高产青蒿株系特有的条带( OPA151000)，并有可能作为高产株系的分子标记。 利用整体透明和石蜡切片技术对青蒿的生殖结构进行了研究，研究表明青蒿的头状花序球形，直径大约2—3mm。两性花10-30朵，单层花冠合生，开放时顶端5裂，内有5枚聚合雄蕊。一枚雌蕊，柱头两裂。单性雌花10-18朵，花冠舌状，雄蕊退化。两种花都是子房下位，单室倒生型胚珠。 雌配子体的的发育过程，大孢子母细胞经过减数分裂形成二分体和四分体，四分体中合点端的一个发育成具功能的大孢子，其它三个分解掉，胚囊发育成单核胚囊。然后通过三次有丝分裂经过二核胚囊、四核胚囊阶段发育到八核胚囊，最后形成七细胞、八核胚囊。卵细胞和两个助细胞组成卵器分布在珠孔端，而三个反足细胞分布在合点端。 小孢子母细胞经过两次减数分裂形成二分体和四分体，四分体中的小孢子释放出来后发育成单核花粉，单核花粉经过有丝分裂发育成二核花粉和三核花粉。

羊草叶片光合参数对不同水分变化的响应机理与模拟林祥磊

由温室气体的大量排放引起的全球环境变化不仅导致了温度的升高和降水格局的变化，亦引起了干旱等极端气候事件的频繁发生。研究羊草光合参数对水分胁迫及复水的响应，可以增进全球变化对植物光合作用和陆地生态系统影响的理解，揭示羊草光合参数对水分胁迫及复水的响应机理，为发展植物光合参数对水热变化的响应模型提供参数与依据。基于温室模拟试验和野外观测实验，采用Li-6400R便携式光合作用系统（Li-cor, Lincoln, NE, USA）测定了羊草（Leymus chinensis）叶片A/Ci曲线(净光合速率A和胞间CO2浓度Ci的关系曲线)，获取了羊草叶片的光合参数Vcmax（Rubisco的最大羧化速率）、Jmax（最大光合电子传递速率）和TPU（磷酸丙糖利用率），分析研究了羊草叶片光合参数Vcmax（Rubisco的最大羧化速率）、Jmax（最大光合电子传递速率）和TPU（磷酸丙糖利用率）对干旱与复水的响应机理。结果表明，无论是模拟实验还是野外观测均显示羊草叶片的光合参数随着土壤水分的增加呈抛物线曲线变化，但各光合参数最大值对土壤水分的响应不同。温室模拟下的羊草光合参数Vcmax，Jmax和TPU在土壤含水量分别在15.56%，15.89%和16.23%时达到最大，而野外观测羊草的光合参数Vcmax，Jmax和TPU在土壤含水量分别为16.89%，17%和16.79%时达到最大。复水后羊草植株叶片光合参数的变化取决于前期干旱的影响，土壤含水量18%～19%和15%～16%处理的羊草复水后光合参数能够恢复正常，前者甚至超过正常水平，说明适宜的水分胁迫在复水后能够提高羊草叶片的光合能力，促进光合作用;土壤含水量10%～12%和7%～9%处理下的羊草复水后光合参数则不能恢复到正常水平。土壤含水量15%～16%可能是羊草光合能力在水分胁迫后能否恢复的阈值。

三种萝藦科植物中C21甾类成分的研究

　　本实验对三种萝藦科植物通光散(Marsdenia tenacissima)、黑水藤（Biondia insignis Tsiang）和徐长卿（Cynanchum Paniculatum）中的C21甾体化合物进行了研究。从通光散藤茎乙酸乙酯提取物的水解产物中，分离得到两类八个C21甾类甙元。经光谱鉴定，它们的结构分别为11α-O-(2-甲基)-丁酰基-12β-O-顺芷酰通光藤甙元乙（1），11α-O-乙酰基-12β-O-乙酰基通光藤甙元乙（2），11α-O-（2-甲基）-丁酰基-12β-O-乙酰基通光藤甙元乙(3), 11α-O-苯甲酰基-12β-O-乙酰基通光藤甙元乙(4)， 11α-O-顺芷酰基-12β-O-乙酰基通光藤甙元乙（5）11α-O-顺芷酰基-12β-O-顺芷酰基通光藤甙元乙（6），12β-O-乙酰基通光藤甙元甲（7）和12β-O-顺芷酰基通光藤甙元甲（8）。其中，化合物2和8为新化合物。从黑水藤乙醇提取物的水解产物中，分离得到了两个C21甾体化合物。经1D、2D NMR技术鉴定，分别为（3β，14β，15β，17β）-3, 14-二羟基-15，16-裂-孕甾-5-烯-15-醛-16-半缩醛-20-酮（1）和白前甙元C（2）。其中1为15，16-裂环的新骨架类型的C21甾体化合物，命名为黑水藤甙元甲。从采购于昆明、浙江、湖南三地药材市场的徐长卿的根及根茎中，分离得到了18个化合物（其中昆明徐长卿6个，浙江徐长卿9个，湖南徐长卿3个）。经光谱数据分析，这些化合物被鉴定为：cynapanoside-C (1), cynapanoside-A (2), 白前甙元B 3-O-β-D-磁嘛吡喃糖甙(3)，白前甙元C 3-O-β-D-葡萄吡喃糖基-(1 → 4)-α-L-2-脱氧洋地黄吡喃糖基-（1 → 4）-β-D-洋地黄吡喃糖基-（1 → 4）-β-D-夹竹吡喃糖甙（4），白前甙元C3-O-β-D-葡萄吡喃糖基-(1 → 4)-α-D-夹竹桃吡喃糖基-(1 → 4)-β-D-洋地黄吡喃糖基-(1 → 4)-β-D-夹竹桃吡喃糖甙（5），白前甙元C 3-O-β-D-葡萄吡喃糖基-（1 → 4）-β-D-葡萄吡喃糖基-（1 → 4）-α-D-夹竹桃吡喃糖基-（1 → 4）-β-D-洋地黄吡喃糖基-（1 → 4）-β-D-夹竹桃吡喃糖甙（6），cynatratoside-B (7)，cynatratoside-C (8);glaucoside A(9)，新白薇甙元B 3-O-β-L-磁嘛吡喃糖基-（1 → 4）-β-D-洋黄吡喃糖基-（1 → 4）-β-D-夹竹桃吡喃糖甙（10），白前甙元 A 3-O-α-L-磁嘛吡喃糖基-（1 → 4）-β-D-洋地黄吡喃糖基-（1 → 4）-β-D-磁嘛吡喃糖甙（11），白前甙元 B 3-O-α-L-磁糖基吡喃糖基-(1 → 4)-β-D-磁嘛吡喃糖基-(1 → 4)-β-D-磁嘛吡喃糖甙(12)，白前甙元D 3-O-α-L-磁嘛吡喃糖基（1 → 4）-β-D-洋地黄吡喃糖基-（1 → 4）-β-D-磁嘛吡喃糖甙（13），白前甙元 C 3-O-β-D-葡萄吡喃糖基-（1 → 4）-β-D-葡萄吡喃糖基-（1 → 4）-α-L-2-脱氧洋地黄吡喃糖基-（1 → 4）-β-D-磁嘛吡喃糖基-（1 → 4）-β-D-夹竹桃吡喃糖甙（14），白前甙元 C 3-O-β-D-葡萄吡喃糖基-（1 → 4）-β-D-葡萄吡喃糖基-（1 → 4）-α-L-磁嘛吡喃糖基-（1 → 4）-β-D-洋地黄吡喃糖基-（1 → 4）-β-D-夹竹桃吡喃糖甙（15），白前甙元 B 3-O-α-D-夹竹桃吡喃糖基-(1 → 4)-β-D-洋地黄吡喃糖基-（1 → 4）-β-D-磁嘛吡喃糖甙（16），白前甙元 D 3-O-α-D-夹竹桃吡喃糖基-(1 → 4)-β-D-洋地黄吡喃糖基-(1 → 4)-β-D-磁嘛吡喃糖甙(17)，白前甙元月B 3-O-α-L-磁嘛吡喃糖基-(1 → 4)-β-D-洋地黄吡喃糖基-(1 → 4)-β-D-磁嘛吡喃糖甙（18）。其中，化合物3-6，10-18为新化合物，10的甙元为一个新甙元，命名为新白薇甙无B。

云南普通马矮型马蛋白多态性及其品种分化关系

运用蛋白电泳技术, 对云南普通马和矮型马群体的遗传多样性及其群众间遗传分化关系作了分析研究。44个遗传座位中有10个座位检测到多态性, 通过多态百分比、平均杂合度、平均等位基因的计算表明, 云南普通马和矮型马的遗传多样性较为丰富, 小区域内的群体存在着多样的遗传基因, 两种马在遗传上有一定差异。根据分子钟假说和相应的公式, 推算两者的分岐时间约为18.5万年。图1表2参12(金显谟)

Band-tail shape and transport near the metal-insulator transition in Si-doped

In the present work, an infrared light-emitting diode is used to photodope molecular-beam-epitaxy-grown Si: Al0.3Ga0.7As, a well-known persistent photoconductor, to vary the effective electron concentration of samples in situ. Using this technique, we examine the transport properties of two samples containing different nominal doping concentrations of Si [1 x 10(19) cm(-3) for sample 1 (S1) and 9 x 10(17) cm(-3) for sample 2 (S2)] and vary the effective electron density between 10(14) and 10(18) cm(-3). The metal-insulator transition for S1 is found to occur at a critical carrier concentration of 5.7 x 10(16) cm(-3) at 350 mK. The mobilities in both samples are found to be limited by ionized impurity scattering in the temperature range probed, and are adequately described by the Brooks-Herring screening theory for higher carrier densities. The shape of the band tail of the density of states in Al0.3Ga0.7As is found electrically through transport measurements. It is determined to have a power-law dependence, with an exponent of -1.25 for S1 and -1.38 for S2.

Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

The resistivity of hydrothermally grown ZnO single crystals increased from similar to 10(3) Omega cm to similar to 10(6) Omega cm after 1.8 MeV electron irradiation with a fluence of similar to 10(16) cm(-2), and to similar to 10(9) Omega cm as the fluence increased to similar to 10(18) cm(-2). Defects in samples were studied by thermally stimulated current (TSC) spectroscopy and positron lifetime spectroscopy (PLS). After the electron irradiation with a fluence of 10(18) cm(-2), the normalized TSC signal increased by a factor of similar to 100. A Zn vacancy was also introduced by the electron irradiation, though with a concentration lower than expected. After annealing in air at 400 degrees C, the resistivity and the deep traps concentrations recovered to the levels of the as-grown sample, and the Zn vacancy was removed.

The growth temperatures dependence of optical and electrical properties of InN films

InN films grown on sapphire at different substrate temperatures from 550 degrees C to 700 degrees C by metalorganic chemical vapor deposition were investigated. The low-temperature GaN nucleation layer with high-temperature annealing (1100 degrees C) was used as a buffer for main InN layer growth. X-ray diffraction and Raman scattering measurements reveal that the quality of InN films can be improved by increasing the growth temperature to 600 degrees C. Further high substrate temperatures may promote the thermal decomposition of InN films and result in poor crystallinity and surface morphology. The photoluminescence and Hall measurements were employed to characterize the optical and electrical properties of InN films, which also indicates strong growth temperature dependence. The InN films grown at temperature of 600 degrees C show not only a high mobility with low carrier concentration, but also a strong infrared emission band located around 0.7 eV. For a 600 nm thick InN film grown at 600 degrees C, the Hall mobility achieves up to 938 cm(2)/Vs with electron concentration of 3.9 x 10(18) cm(-3).

Stone-Wales defects created by low energy recoils in single-walled silicon carbide nanotubes

The defect creation at low energy events was studied using density functional theory molecular dynamics simulations in silicon carbide nanotubes, and the displacement threshold energies determined exhibit a dependence on sizes, which decrease with decreasing diameter of the nanotubes. The Stone-Wales (SW) defect, which is a common defect configurations induced through irradiation in nanotubes, has also been investigated, and the formation energies of the SW defects increase with increasing diameter of the nanotubes. The mean threshold energies were found to be 23 and 18 eV for Si and C in armchair (5,5) nanotubes. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3238307]

半导体科学与技术

本书是在国家自然科学基金委员会信息科学部的支持下，邀请了三十余位工作在半导体研究领域第一线的知名专家撰写而成的。本书系统介绍了当前国际、国内半导体科学和技术各个领域，包括半导体材料的生长、物理问题、重要实验和理论结果、器件结构和应用等方面的基础知识、研究现状、发展趋势和有待解决的关键问题。 本书适合从事半导体研究和教学的大学教师、科技工作者、工程技术人员、研究生、本科生以及科技管理部门有关工作人员和管理专家阅读和参考。

四氟乙烯等离子体聚合反应的基础研究

[I] 等离子体聚四氟乙烯的ESCA表征 本研究采用外部电容耦合式聚合装置，频率为13.56MHz，合成了等离子体聚四氟乙烯（PPTFE）。应用ESCA表征了辉光压和非辉光压产物的结构，同时应用CNDO进到了理论计算。结果表明，在辉光压上非辉光压中制得的PPTFE结构差别很大。非辉光内淀积物结构亦现差异。辉光压内的PPTFE是高度支化交联的，在本实验的典型反应条件下，PPTFE的F/C比为1.42，Gs区五个峰确定归属后，各主要对应基团的相对组成约为：CF_3－21%、CF_2－32%、CF－22%、－C from | to | of — 20%，其余为少量的CFH、CH_2（II）、CH_2（I）。在非辉光压内可得到近於线线型的PPTFE，其F/C为2.08，端基CF_3约占15%，CF_2占78%，代表支化交联的基团CF、－C from | to | of －皆为零，另外应用X射线衍射法证实，在非辉光压中形成的PPTFE具有类似于聚四氟乙烯的（PTFE）结晶，这一实验结果至今未见文献报导。深入分析这一结果，并运用ESR、MS、~(19)F－NMR等表征手段，进一步提出四氟乙烯等离子体聚合反应机理。这方面在[II]中论述。本工作提出五类十三种模型化合物，并运用Siegbahn的电荷电位模型同时结合使用CNDO/2电子计算机程序；还运用Pauling价键模型，分别应用这两种理论方法，计算了PPTFE中ClS结合能位移（ΔEi），所得结果相近，从而为ClS区五个峰的归属提供理论依据。五个峰归属为：(1) 284.7(ev) － CH_2(I)，(2) 287.0(ev) － －C from | to | of －、CH_2(II)，(3) 289.0(ev) －CF、CFH，(4) 291.5(ev) － CF_2，(5) 293.6(ev) － CF_3。通过对模型化合物中ClS的ΔEi计算结果，推导出F作为α、β、γ位碳上的取代基对α位碳上IS电子结合能位移影响所产生的效应值，并初步总结出表达这种效应的经验式：ΔEi ＝ aα ＋ bβ ＋ cγ式中α、β、γ分别为2.23 ± 0.08(ev)、0.27 ± 0.02(ev)、0.20 ± 0.02(ev)，a、b、c为取代基F的个数。实验结果还证明，淀积位置、功率、压力、等离子气体如Ar、He、N_2等反应条件对PPTFE膜结构有影响，并应用能量梯度解释这种影响；另外发现，同功率、同压力但不同淀积位置上以及同淀积位置但不同功率或不同压力时的PPTFE膜结构所受能量梯度的影响。本工作根据等离子体聚四氟工烯结构的表征结果，并结合ESR、MS等有关分析数据，提出了PPTFE的结构模型。[II] 等郭子体聚四氟乙烯的反应机理 鉴于等离子体聚合反应的复杂性，目前对等离子体聚合反应机理争论较大，其焦点是：反应的活性中心是离子还是自由基；反应地点是在气相还是在反应体系的固体表面。本工作通过对等离子体聚四氟乙烯气相产物的研究证实：等离子体聚合反就是通过自由基历程，引发和初级链增长主要在气相，脱F和支化交联反应在表面上进行。聚合反应装置同[I]中所述，聚合条件是功率60瓦，压力1 * 10~(-1)乇。通过液氟冷阱收集气相生成物，然后制备成有机溶液和本体溶液。气相生成物的ESR分析结果表明，PPTFE膜中存在自由基浓度约在10~(18)自旋数／克，峰形为一条反对称吸收线，宽为175G，g值是2.005。气相生成物的丙酮、苯、环已烷、已烷等有机溶液的ESR谱相同，皆为20条精细结构分裂谱线。另外，通过一系列实验，检测了桔黄色本体溶液的ESR谱，终于得到具有160条超精细结构的分裂谱线，自由基浓度高达10~(20)自旋数／克。初步认为是几种自由基的混合物，固谱图十分复杂，目前解谱尚有困难，需进一步研究。等高子体气相生成物中有大量自由基并且得到其精细和超精细分裂谱线，这一实验结果至今未见文献报导。这个结果进一步证实了聚合反应的活性中心主要是自由基。考察了PPTFE膜的自由基在90 ℃时随时间变化的ESR谱，发现一开始衰减很快；研究了PPTFE膜的自由基在不同气氛下常温衰减情况，结果指出：辉光压和非辉光压的PPTFE膜中自由基在空气中衰减快，辉光压的PPTFE膜中自由基在真空中及单体气氛中衰减缓慢。气相生成物的有机溶液在90 ℃时随时间变化的ESR谱表明，各峰衰减速率不同，证实并非一种自由基，溶液的自由基能与吡啶反应生成棕红色物质，可能是吡啶盐。本实验用GC－MS联用对气相冷凝物本体溶液进行了分析，比文献上只用MS与聚合反应体系联用分析气相混合物的方法，对分析反应机理提供更为有说服力的实验结果。结果表明，四氟乙烯等离子体聚合的气相生成物是直链的全氟烷烃（分子中碳原子数为C_3－C_8），还有含碳原子数为C_4、C_5、C_6、C_8全氟环烷烃，也可能是括分子链两端是自由基的直链全氟烷烃，还有二氟卡宾。从TFE等离子体聚合的气相中产生齐聚物及其结构特征，可以推断气相中发生了链引发反应和初级增长反应，引发反应的历程首先是TFE单体分子中π键断裂，其次是C~σ-C的σ键均裂，然后通过自由基的复合或诱导反应进行链的初级增长反应。还进行了气相生成物有机溶液的~(19)F－NMR分析，其结果初步看来与GC－MS的结果相一致。还探索了不同条件下在非辉光压内得到的PPTFE膜，进一步表明，在顺着气流方向的淀积位置上的膜结构是接近线型的。这个结果与用质谱、核磁的表征结果相符：从不用方面证实了上述反应历程。此外，通过对PPTFE及PTFE在Ar等离子体系中的刻蚀实验，表明了聚合膜上发生六量脱F反应。由这个结果并结合PPTFE膜及气相产物的结构表征，可以推测到PPTFE膜的支化，交联是通过表面反应进行的。综合四氟乙烯等离子体聚合反应机理的讨论，本论文建议了TFE的等离子体聚合反应历程模型。