Kinetics and Force Dependence of P-selectin/PSGL-1 Interactions Measured by AFM

Leukocytes roll along the endothelium of postcapillary venules in response to inflammatory and thrombotic processes. The rolling under hydrodynamic shear forces is a first step in directing leukocytes out of the blood stream into sites of inflammation and is mediated by the selectins, a family of extended, modular, and calcium-dependent lectin receptors. The interactions between P-, E-or L-selectins and their count.

Distinct Element Analysis on Propagation Characteristics of P-Wave in Rock Pillar with Finite length

以节理岩体等效刚度的概念为基础,讨论了离散元刚性块体模型中节理刚度的选取问题。采用面-面接触模型模拟了纵波在一维岩体中的传播,给出了纵波波形；研究了阻尼比、软弱夹层以及节理间是否可拉对波传播规律的影响。

The Heterogeneous Growth of P(3MeTh)--An Ellipsometric Study

pan style="color: rgb(51, 51, 51); font-family: arial, helvetica, sans-serif; font-size: 13px; line-height: 22px; background-color: rgb(248, 248, 248);">Successive thicker P(3MeTh) layers are analysed by ex situ conventional and imaging ellipsometry. Thin films display a smooth surface, are compact and homogeneous while for a growth charge above 20 mC cm(-2) the polymer structure modifies to a still uniform but less dense layer. A two-layer model is used and a mathematical procedure is developed to obtain, simultaneously, from the experimental ellipsometric parameters, Delta and Psi, the thickness and the complex refractive index of P(3MeTh) films grown up to 80 mC cm(-2). Thicker polymer layers are disordered and present a high degree of surface roughness. pan>

Forced extension of P-selectin construct using steered molecular dynamics

P-selectin, a 70-nm-long cellular adhesive molecule, possesses elastic and extensible properties when neutrophils roll over the activated endotheliam of blood vessel in inflammatory reaction. Transient formation and dissociation of P-selectin/ligand bond on applied force of blood flow induces the extension of P-selectin and relevant ligands. Steered molecular dynamics simulations were performed to stretch a single P-selectin construct consisting of a lectin (Lec) domain and an epithelial growth factor (EGF)-like domain, where P-selectin construct was forced to extend in water with pulling velocities of 0.005-0.05 nm/ps and with constant forces of 1000-2500 pN respectively. Resulting force-extension profiles exhibited a dual-peak pattern on various velocities, while both plateaus and shoulders appeared in the extension-time profiles on various forces. The force or extension profiles along stretching pathways were correlated to the conformational changes, suggesting that the structural collapses of P-selectin Lec/EGF domains were mainly attributed to the burst of hydrogen bonds within the major beta sheet of EGF domain and the disruptions of two hydrophobic cores of Lee domain. This work furthers the understanding of forced dissociation of P-selectin/ligand bond.

Impact of carrier stiffness and microtopology on two-dimensional kinetics of P-selectin and P-selectin glycoprotein ligand-1 (PSGL-1) interactions

Mechanics and surface microtopology of the molecular carrier influence cell adhesion, but the mechanisms underlying these effects are not well understood. We used a micropipette adhesion frequency assay to quantify how the carrier stiffness and microtopology affected two-dimensional kinetics of interacting adhesion molecules on two apposing surfaces. Interactions of P-selectin with P-selectin glycoprotein ligand-1 (PSGL-1) were used to demonstrate such effects by presenting the molecules on three carrier systems: human red blood cells (RBCs), human promyelocytic leukemia HL-60 cells, and polystyrene beads. Stiffening the carrier alone or in cooperation with roughing the surface lowered the two-dimensional affinity of interacting molecules by reducing the forward rate but not the reverse rate, whereas softening the carrier and roughing the surface had opposing effects in affecting two-dimensional kinetics. In contrast, the soluble antibody bound with similar three-dimensional affinity to surface-anchored P-selectin or PSGL-1 constructs regardless of carrier stiffness and microtopology. These results demonstrate that the carrier stiffness and microtopology of a receptor influences its rate of encountering and binding a surface ligand but does not subsequently affect the stability of binding. This provides new insights into understanding the rolling and tethering mechanism of leukocytes onto endothelium in both physiological and pathological processes.

A new protein structure of P-II class snake venom metalloproteinases: it comprises metalloproteinase and disintegrin domains

A new metalloproteinase-disintegrin, named Jerdonitin, was purified from Trimeresurus jerdonii venom with a molecular weight of 36 kDa on SDS-PAGE. It dose-dependently inhibited ADP-induced human platelet aggregation with IC50 of 120 nM. cDNA cloning and sequencing revealed that Jerdonitin belonged to the class II of snake venom metalloproteinases (SVMPs) (P-II class). Different from other P-II class SVMPs, metalloproteinase and disintegrin domains of its natural protein were not separated, confirmed by internal peptide sequencing. Compared to other P-II class SVMPs, Jerdonitin has two additional cysteines (Cys219 and Cys238) located in the spacer domain and disintegrin domain, respectively. They probably form a disulfide bond and therefore the metalloproteinase and disintegrin domains cannot be separated by posttranslationally processing. In summary, comparison of the amino acid sequences of Jerdonitin with those of other P-II class SVMPs by sequence alignment and phylogenetic analysis, in conjunction with natural protein structure data, suggested that it was a new type of P-II class SVMPs. (C) 2003 Elsevier Inc. All rights reserved.

Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector

A new method to test the hole concentration of p-type GaN is proposed, which is carried out by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector. It is shown that the spectral response of the photodetector changes considerably with reversed bias. It is found that the difference between photodetector's quantum efficiency at two wavelengths, i.e. 250 and 361 nm, varies remarkably with increasing reversed bias. According to the simulation calculation, the most characteristic change occurs at a reversed voltage under which the p-GaN layer starts to be completely depleted. Based on this effect the carrier concentration of p-GaN can be derived.

First-principles study of p-type transparent conductive oxides CuXO2 (X=Y, Sc, and Al)

Using first-principles methods we have calculated electronic structures, optical properties, and hole conductivities of CuXO2 (X=Y, Sc, and Al). We show that the direct optical band gaps of CuYO2 and CuScO2 are approximately equal to their fundamental band gaps and the conduction bands of them are localized. The direct optical band gaps of CuXO2 (X=Y, Sc, and Al) are 3.3, 3.6, and 3.2 eV, respectively, which are consistent with experimental values of 3.5, 3.7, and 3.5 eV. We find that the hole mobility along long lattice c is higher than that along other directions through calculating effective masses of the three oxides. By analyzing band offset we find that CuScO2 has the highest valence band maximum (VBM) among CuXO2 (X=Y, Sc, and Al). In addition, the approximate transitivity of band offset suggests that CuScO2 has a higher VBM than CuGaO2 and CuInO2 [Phys. Rev. Lett. 88, 066405 (2002)]. We conclude that CuScO2 has a higher p-type doping ability in terms of the doping limit rule. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2991157]

Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors

We investigated the influence of thickness of p-GaN layer on the performance of p-i-n structure GaN ultraviolet photodetector. Through the simulation calculation, it was found that both the quantum efficiency and dark current of device decrease when employing thicker p-GaN layer, while both the quantum efficiency and dark current increase with decreasing thickness of p-GaN layer. It is suggested that the Schottky contact junction between the metal and p-GaN may be responsible for the incompatible effect. We has to make a suitable choice of the thickness of p-GaN in the device design according to the application requirement.

Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers

We report an experimental and theoretical study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot (QD) lasers. The maximum modal gain of the QD laser with five stacks of QDs is as high as 17.5 cm(-1) which is the same as that of the undoped laser with identical structures. The expression of the maximum modal gain is derived and it is indicated that p-doping has no effect to the maximum modal gain. We theoretically calculated the maximum modal gain of the QD lasers and the result is in a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial to achieving a greater maximum modal gain that leads to lower threshold current density and higher differential modal gain, which is good for the application of p-doped 1.3 mu m InAs/GaAs QD lasers in optical communications systems.

Extraction of intrinsic frequency response of p-i-n photodiodes

This letter presents a new method for extracting the intrinsic frequency response of a p-i-n photodiode (PD) from the measured frequency response of the PD at different bias voltages. This method is much simpler than the conventional calibration method, since only the measured scattering parameters are required, and there is no need to calibrate the test fixtures and the lightwave source. Experiment shows that the proposed method is as accurate as the calibration method.

Enhanced performance of p-GaN by Mg delta doping

The electrical and structural properties of Mg delta-doped GaN epilayers grown by MOCVD were investigated. Compared to uniform Mg-doping GaN layers, it has been shown that the delta-doping (delta-doping) process could suppress the dislocation density and enhance the p-type performance. The influence of pre-purge step on the structural properties of GaN was also investigated. The hole concentration of p-GaN decreases when using a pre-purge step. These results can be explained convincingly using a simple model of impurity incorporation under Ga-free growth condition. (C) 2007 Elsevier B.V. All rights reserved.

Deposition of p-type nc-SiC : H thin films with subtle carbon incorporation for applications in p-i-n solar cells

This paper presents a detailed study on the effects of carbon incorporation and substrate temperature on structural, optical, and electrical properties of p-type nanocrystalline amorphous silicon films. A p-nc-SiC: H thin film with optical gap of 1.92 eV and activation energy of 0.06 eV is obtained through optimizing the plasma parameters. By using this p-type window layer, single junction diphasic nc-SiC : H/a-Si : H solar cells have been successfully prepared with a V-oc of 0.94 eV.