A two-dimensional photonic crystal slab mirror with silicon on insulator for wavelength 1.3 mu m

A concrete two-dimensional photonic crystal slab with triangular lattice used as a mirror for the light at wavelength 1.3 mu m with a silicon-on-insulator (Sol) substrate is designed by the three-dimensional plane wave expansion method. For TE-like modes, the bandgap in the F-K direction is from 1087nm to 1559nm. The central wavelength in the bandgap is about 1.3 mu m, hence the incident light at wavelength 1.3 mu m will be strongly reflected. Experimentally, such a photonic crystal slab is fabricated on an SOI substrate by the combination of EBL and ICP etching. The measurement of its transmission characteristics shows the bandgap edge in a longer wavelength is about 1540mn. The little discrepancy between the experimental data and the theoretical values is mainly due to the size discrepancy of the fabricated air holes.

The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content

Sb-assisted GaInNAs/GaAs quantum wells (QWs) with high (42.5%) indium content were investigated systematically. Transmission electron microscopy, reflection high-energy electron diffraction and photoluminescence (PL) measurements reveal that Sb acts as a surfactant to suppress three-dimensional growth. The improvement in the 1.55 mu m range is much more apparent than that in the 1.3 mu m range.. which can be attributed to the difference in N composition. The PL intensity and the full-width at half maximum of the 1.55 mu m single-QW were comparable with that of the 1.3 Am QWs. (c) 2006 Elsevier B.V. All rights reserved.

Detect the sub-wavelength data by applying a very-small-aperture laser

We present a theoretical and experimental research about applying a very-small-aperture laser (VSAL) to detect sub-wavelength data. Near-field distribution of a VSAL, which is essential for the application of such near-field devices, will be affected by the sample or fiber posited in the near-field region of the aperture. When the device is applied to detect the sub-wavelength data, the real resolution depends on the near-field spot size, the divergent angle of the beam and the distance from the aperture to the sample. Experimental results, including the near-field detection of the spot and detection of the sub-wavelength data by using the VSAL, are presented in this paper. We realize the two dimensional scanning about the sub-wavelength data (with the width 600 nm) by employing a VSAL with a 300 nm x 300 nm aperture.

Improved optical heterodyne methods for measuring. frequency responses of photodetectors

An improved optical self-heterodyne method utilizing a distributed Bragg reflector (DBR) tunable laser and an optical fiber ring interferometer is presented in this paper. The interference efficiency can be increased by 7 dB compared with the scheme using the conventional Mach-Zehnder interferometer. The unsteady process that the beating frequency experiences in each tuning period is investigated. According to the measurement results, the wavelength and optical power of the tunable laser will be steady when the square-wave frequency is lower than 300 kHz. It has been shown that when a square-wave voltage is applied to the phase section of the tunable laser, the laser linewidths vary in a wide range, and are much larger than that under dc voltage tuning. The errors caused by the variations in the linewidth of the beat signal and optical power can be eliminated using the proposed calibration procedures, and the measurement accuracy can, therefore, be significantly improved. Experiments show that the frequency responses obtained using our method agree well with the data provided by the manufacturer, and the improved optical self-heterodyne method is as accurate as the intensity noise technique.

Dual-wavelength distributed feedback laser for CWDM based on non-identical quantum well

Using non-identical quantum wells as the active material, a new distributed-feed back laser is fabricated with period varied Bragg grating. The full width at half maximum of 115 nm is observed in the amplified spontaneous emission spectrum of this material, which is flatter and wider than that of the identical quantum wells. Two wavelengths of 1.51 mu m and 1.53 mu m are realized under different work conditions. The side-mode suppression ratios of both wavelengths reach 40 dB. This device can be used as the light source of coarse wavelength division multiplexer communication systems.

Magnetic field tuning of the effective g factor in a diluted magnetic semiconductor quantum dot

The spin interaction and the effective g factor of a magnetic exciton (ME) are investigated theoretically in a diluted magnetic semiconductor (DMS) quantum dot (QD), including the Coulomb interaction and the sp-d exchange interaction. At low magnetic field, the ME energy decreases rapidly with increasing magnetic field and saturates at high magnetic field for high Mn concentration. The ground state of the ME exhibits an interesting crossing behavior between sigma(+)-ME and sigma(-)-ME for low Mn concentration. The g(ex) factor of the ME in a DMS QD displays a monotonic decrease with increasing magnetic field and can be tuned to zero by an external magnetic field. (C) 2003 American Institute of Physics.

Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure

By means of hydrostatic pressure tuning, we have observed the strong-coupling exciton-polariton mode in a planar microcavity with an InGaAs/GaAs quantum well embedded in it, over a pressure range from 0.37 to 0.41 GPa. The experimental data can be fitted very well to a corresponding theoretical formula with a unique value of the vacuum Rabi splitting equal to 6.0 meV. A comparison between pressure tuning and other tuning methods is made as regards to what extent the intrinsic features of the exciton and cavity will be influenced during the tuning procedure.

Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats

In this study, we first present the process of the melt epitaxial (ME) growth method, and the improvement of low-temperature electron mobility of the long-wavelength InAsSb epilayers grown by ME in a fused silica boat. The electrical properties were investigated by van der Pauw measurement at 300 and 77 K. It is seen that the electron mobility of the InAsSb samples grown by graphite boat decreased from 55,700 to 26,600 cm(2)/V s when the temperature was reduced from 300 to 77 K, while for the samples grown by fused silica boat, the electron mobility increased from 52,600 at 300 K to 54,400 cm(2)/V s at 77 K. The electron mobility of 54,400cm(2)/Vs is the best result, so far, for the InAsSb materials with cutoff wavelength of 8-12 mum at 77 K. This may be attributed to the reduction of the carbon contamination by using a fused silica boat instead of a graphite boat. (C) 2002 Elsevier Science B.V. All rights reserved.

InxGa1-xAs/AlyGa1-yAs/AlzGa1-zAs asymmetric step quantum-well middle wavelength infrared detectors

InxGa1-xAs/AlyGa1-yAs/AlzGa1-zAs asymmetric step quantum-well middle wavelength (3-5 mum) infrared detectors are fabricated. The components display photovoltaic-type photocurrent response as well as the bias-controlled modulation of the peak wavelength of the main response, which is ascribed to the Stark shifts of the intersubband transitions from the local ground states to the extended first excited states in the quantum wells, at the 3-5.3 mum infrared atmospheric transmission window. The blackbody detectivity (D-bb*) of the detectors reaches to about 1.0x10(10) cm Hz(1/2)/W at 77 K under bias of +/-7 V. By expanding the electron wave function in terms of normalized plane wave basis within the framework of the effective-mass envelope-function theory, the linear Stark effects of the intersubband transitions between the ground and first excited states in the asymmetric step well are calculated. The obtained results agree well with the corresponding experimental measurements. (C) 2001 American Institute of Physics.

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.

Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands

We report the effect of InchiGa1-chiAs (0 less than or equal to chi less than or equal to0.4) capping layer on photoluminescence (PL) properties of 1.3 mum wavelength self-assembled InAs quantum islands, which are formed via depositing 3.5 monolayers (ML) InAs on GaAs (1 0 0) substrate by molecular beam epitaxy (MBE). Compared with the InchiGa1-chiAs capping layer containing a larger In mole fraction chi greater than or equal to0.2 and the GaAs capping layer (chi = 0), the InAs islands covered by the In0.1Ga0.9As layer show PL with lower emission energy, narrower full-width at half-maximum (FWHM), and quite stronger intensity. The PL peak energy and FWHM become more temperature dependent with the increase of In content in the InchiGa1-chiAs capping layer (chi greater than or equal to0.2), while the InAs islands covered by the In0.1Ga0.9As layer is much less temperature sensitive. In addition, the InAs islands covered by the In0.1Ga0.9As capping layer show room temperature PL wavelength at about 1.3 mum. (C) 2001 Published by Elsevier Science B.V.

Experimental study on tunable external cavity photodetectors

In this paper, an experiment on tunable resonant cavity enhanced (RCE) photodetector with external cavity is reported. It is the first time to realize a tunable RCE photodetector in China. A tuning range about 10 nm has been obtained and further extension is expected. Corresponding theoretical analysis and discussions are presented. (C) 2000 Elsevier Science B.V. All rights reserved.

A Complex BPF with On Chip Auto-tuning Architecture for Wireless Receivers

A 3(rd) order complex band-pass filter (BPF) with auto-tuning architecture is proposed in this paper. It is implemented in 0.18um standard CMOS technology. The complex filter is centered at 4.092MHz with bandwidth of 2.4MHz. The in-band 3(rd) order harmonic input intercept point (IIP3) is larger than 16.2dBm, with 50 Omega as the source impedance. The input referred noise is about 80uV(rms). The RC tuning is based on Binary Search Algorithm (BSA) with tuning accuracy of 3%. The chip area of the tuning system is 0.28 x 0.22 mm(2), less than 1/8 of that of the main-filter which is 0.92 x 0.59 mm(2). After tuning is completed, the tuning system will be turned off automatically to save power and to avoid interference. The complex filter consumes 2.6mA with a 1.8V power supply.

A Complex BPF with On Chip Auto-tuning Architecture for Low-IF Receivers

A 3(rd) order complex band-pass filter (BPF) with auto-tuning architecture is proposed in this paper. It is implemented in 0.18 mu m standard CMOS technology. The complex filter is centered at 4.092MHz with bandwidth of 2.4MHz. The in-band 3(rd) order harmonic input intercept point (IIP3) is larger than 19dBm, with 50 Omega as the source impedance. The input referred noise is about 80 mu V-rms. The RC tuning is based on Binary Search Algorithm (BSA) with tuning accuracy of 3%. The chip area of the tuning system is 0.28x0.22mm(2), less than 1/8 of that of the main-filter which is 0.92x0.59mm(2). After tuning is completed, the tuning system will be turned off automatically to save power and to avoid interference. The complex filter consumes 2.6mA with a 1.8V power supply.

Long-Wavelength Emission InAs Quantum Dots Grown on InGaAs Metamorphic Buffers

In this work, InAs quantum dots (QDs) grown on a linear graded InGaAs metamorphic buffer layer by molecular beam epitaxy have been investigated. The growth of the metamorphic buffer layers was carefully optimized, yielding a smooth surface with a minimum root mean square of roughness of less than 0.98 nm as measured by atomic force microscopy (AFM). InAs QDs were then grown on the buffer layers, and their emission wavelength at room-temperature is 1.49 mu m as measured by photoluminescence (PL). The effects of post-growth rapid thermal annealing (RTA) on the optical properties of the InAs QDs were investigated. After the RTA, the PL peak of the QDs was blue-shifted and the full width at half maximum decreased.