The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.

Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films

We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11 (2) over bar2)-plane The calculations are performed by the kappa p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction The results show that the transition energies decrease with the biaxial strains changing from -0 5% to 0 5% For films of (11 (2) over bar2)-plane, the strains are expected to be anisotropic in the growth plane Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property The strain can also result in optical polarisation switching phenomena Finally, we discuss the applications of these properties to the (11 (2) over bar2) plane GaN based light emitting diode and lase diode

Interface energy and its influence on interface fracture between metal and ceramic thin films in nanoscale

A theoretical model about the size-dependent interface energy between two thin films with different materials is developed by considering the chemical bonding contribution based on the thermodynamic expressions and the structure strain contribution based on the mechanical characteristics. The interface energy decreases with reducing thickness of thin films, and is determined by such available thermodynamic and mechanical parameters as the melting entropy, the melting enthalpy, the shear modulus of two materials, etc. The predicted interface energies of some metal/MgO and metal/Al2O3 interfaces based on the model are consistent with the results based on the molecular mechanics calculation. Furthermore, the interface fracture properties of Ag/MgO and Ni/Al2O3 based on the atomistic simulation are further compared with each other. The fracture strength and the toughness of the interface with the smaller structure interface energy are both found to be lower. The intrinsic relations among the interface energy, the interface strength, and the fracture toughness are discussed by introducing the related interface potential and the interface stress. The microscopic interface fracture toughness is found to equal the structure interface energy in nanoscale, and the microscopic fracture strength is proportional to the fracture toughness. (C) 2010 American Institute of Physics. [doi:10.1063/1.3501090]

Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering

ZnO films doped with different contents of indium were prepared by radio frequency sputtering technique. The structural, optical and emission properties of the films were characterized at room temperature using XRD, XPS, UV-vis-NIR and PL techniques. Results showed that the indium was successfully incorporated into the c-axis preferred orientated ZnO films, and the In-doped ZnO films are of over 80% optical transparency in the visible range. Furthermore, a double peak of blue-violet emission with a constant energy interval (similar to 0.17 eV) was observed in the PL spectra of the samples with area ratio of indium chips to the Zn target larger than 2.0%. The blue peak comes from the electron transition from the Zn-i level to the top of the valence band and the violet peak from the In-Zn donor level to the V-Zn level, respectively.

Molecular vibration spectroscopy study of irradiation effect in C-60 films induced by low energy ion

Irradiation effect in C-60 films induced by 170 keV B ion was investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies. The damage cross section sigma and the effective damage radius R are deduced from the experimental data of all four IR active modes and evident four Raman active modes of C-60 molecule. The differences on irradiation sensitivity and structural stability of the different active modes of C-60 molecule are compared. The results indicate that T-1u (4) of infrared active mode and A(g) (1) of Raman active mode are most sensitive for B ion irradiation. On the other hand T-1u (2) of infrared active mode and H-g (3) of Raman active mode are comparatively stable under B ion irradiation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3512968]

Film Morphology and Molecular Orientation in Oligothiophene-fluorene Films

The effects of processing conditions on film morphology and molecular orientation were studied for a novel conjugated fluorene-bithiophene oligomer, oligo(9,9-dioctylfluorene-alt-bithiophene) (OF8T2). Depending on the method of film preparation, OF8T2 molecules adopt different orientations in the films. X-ray diffraction peak at 4.9 degrees of the OF8T2 film deposited from petroleum ether/dichloromethane mixture is attributed to a layering distance between sheets of OF8T2 chains, which are separated by the octyl side chains. Preferred orientation is clearly inferred through the absence of peaks corresponding to pi-pi stacking.

Polymer Crystallization Influenced by Initial Orientation of Cylindrical Diblock Copolymers in Thin Films

The effect of the initial states (disordered perpendicular cylinder structure vs. parallel cylinder structure) on the crystallization of polystyrene-block-poly(ethylene oxide) (PS-b-PEO) thin films during cyclohexane annealing was investigated. The cylindrical domains perpendicular or parallel to the surface were obtained by controlling the film thickness. During solvent annealing, for the film with the perpendicular cylinders, the ordering degree of cylinders was increased.

Ring-shaped morphology in H-shaped block copolymer thin films

The formation of ring-shaped structures in an H-shaped block copolymer [a poly(ethylene glycol) backbone with polystyrene branches, i.e., (PS)(2)PEG(PS)(2)] thin film was investigated when it was annealed in saturated PEG-selective acetonitrile vapor. Our results clearly indicate that ring formation is determined by the initial morphology of the spin-coated film, the solvent vapor selectivity and the environmental temperature of the solvent-annealing process. Only the films with the initial core-shell cylindrical structure in strongly PEG-selective acetonitrile vapor could form the ring-shaped structures.