Characteristics of the microbial communities in the integrated vertical-flow constructed wetlands

Microorganisms play an important role in removing pollutants from constructed wetlands. We investigated the microbial characteristics in a novel integrated vertical-flow constructed wetland (IVCW), which has been in operation in Wuhan, China since 1998. We used phospholipid fatty acid (PLFA) and amoA gene to analyze the structure and diversity of the microbial community within the IVCW. PLFA results suggested that the amount of bacterial PLFA was significantly higher than that of fungal PLFA, but the total microbial biomass represented by PLFA index was low in the system. Microbial spatial distribution showed significantly higher bacterial (both G(+) and G(-)) and fungal biomass in the surface than in the subsurface layers. The ratios of monounsaturated to branched PLFA demonstrated that an anaerobic layer sandwiched by two aerobic layers existed in the IVCW, consistent with the redox potential results. Analysis of the amoA revealed the presence of Nitrosomonas-like sequences in the surface substrate of the downflow chamber and apparent diversities of ammonia-oxidizing bacteria in the system. These results suggest that microorganisms, despite their relatively low biomass, have inhabited the IVCW, and the results will offer some valuable information on microbe to system designers and managers.

In situ nutrient removal from aquaculture wastewater by aquatic vegetable Ipomoea aquatica on floating beds

Nutrient-rich effluents caused rising concern due to eutrophication of aquatic environment by utilization of a large amount of formula feed. Nutrient removal and water quality were investigated by planting aquatic vegetable on artificial beds in 36-m(2) concrete fishponds. After treatment of 120 days, 30.6% of total nitrogen (TN) and 18.2% of total phosphorus (TP) were removed from the total input nutrients by 6-m(2) aquatic vegetable Ipomoea aquatica. The concentrations of TN, TP, chemical oxygen demand (COD) and chlorophyll a in planted ponds were significantly lower than those in non-planted ponds (P<0.05). Transparency of water in planted ponds was much higher than that of control ponds. No significant differences in the concentration of total ammonia nitrogen (TAN), nitrate nitrogen (NO3-N) and nitrite nitrogen (NO2--N) were found between planted and non-planted ponds. These results suggested that planting aquatic vegetable with one-sixth covered area of the fishponds could efficiently remove nutrient and improve water quality.

Impacts of CO2 enrichment on growth and photosynthesis in freshwater and marine diatoms

The physiological responses of Nitzschia palea Kutzing, a freshwater diatom, to elevated CO2 were investigated and compared with those of a marine diatom, Chaetoceros muelleri Lemmermann previously reported. Elevated CO2 concentration to 700 mu l/L increased the dissolved inorganic carbon (DIC) and lowered the pH in the cultures of N. palea, thus enhancing the growth by 4%-20% during the whole growth period. High CO2-grown N. palea cells showed lower levels of dark respiration rates and higher I (k) values. Light-saturated photosynthetic rates and photosynthetic efficiencies decreased in N. palea with the doubling CO2 concentration in airflow to the bottom of cultures, although the doubling CO2 concentration in airflow to the surface cultures had few effects on these two photosynthetic parameters. N. palea cells were found to be capable of using HCO3 (-) in addition to gaseous CO2, and the CO2 enrichment decreased their affinity for HCO3 (-) and CO2. Although doubled CO2 level would enhance the biomass of N. palea and C. muelleri to different extents, compared with the marine diatom, it had a significant effect on the specific growth rates of N. palea. In addition, the responses of photosynthetic parameters of N. palea to doubled CO2 concentration were almost opposite to those of C. muelleri.

Carbon source/sink function of a subtropical, eutrophic lake determined from an overall mass balance and a gas exchange and carbon burial balance

Although studies on carbon burial in lake sediments have shown that lakes are disproportionately important carbon sinks, many studies on gaseous carbon exchange across the water-air interface have demonstrated that lakes are supersaturated with CO2 and CH4 causing a net release of CO2 and CH4 to the atmosphere. In order to more accurately estimate the net carbon source/sink function of lake ecosystems, a more comprehensive carbon budget is needed, especially for gaseous carbon exchange across the water-air interface. Using two methods, overall mass balance and gas exchange and carbon burial balance, we assessed the carbon source/sink function of Lake Donghu, a subtropical, eutrophic take, from April 2003 to March 2004. With the overall mass balance calculations, total carbon input was 14 905 t, total carbon output was 4950 1, and net carbon budget was +9955 t, suggesting that Lake Donghu was a great carbon sink. For the gas exchange and carbon burial balance, gaseous carbon (CO2 and CH4) emission across the water-air interface totaled 752 t while carbon burial in the lake sediment was 9477 t. The ratio of carbon emission into the atmosphere to carbon burial into the sediment was only 0.08. This low ratio indicates that Lake Donghu is a great carbon sink. Results showed good agreement between the two methods with both showing Lake Donghu to be a great carbon sink. This results from the high primary production of Lake Donghu, substantive allochthonous carbon inputs and intensive anthropogenic activity. Gaseous carbon emission accounted for about 15% of the total carbon output, indicating that the total output would be underestimated without including gaseous carbon exchange. (C) 2007 Elsevier Ltd. All rights reserved.

Environmental mechanism of change in cyanobacterial species composition in the northeastern part of Lake Dianchi (China)

Environmental mechanism of change in cyanobacterial species composition in the northeastern part of Lake Dianchi (also called Macun Bay and Haidong Bay) was studied using canonical correlation analysis (CCA), but also bottom-up control and top-down control were fully discussed. Results from CCA suggest: (1) the abundance and dominance of Microcystis aeruginosa in Macun Bay and Haidong Bay are influenced by total phosphorus (TP), nitrate (NO3--N), nitrite (NO2--N), dissolved oxygen (DO) and water temperature (WT); (2) water temperature has a positive correlation with the abundance of M. aeruginosa and it also has negative correlations with the abundances of Anabaena flos-aquae and Aphanizomenonon flos-aquae; and (3) abundances of both Anabaena flos-aquae and Aphanizomenon flos-aquae have positive correlations with ammonia-N (NH4+-N). Furthermore, cyanobacterial species composition has no significant correlations with light and size-fractioned iron in this study. Grazers, cyanophages and viruses were able to control cyanobacterial blooms and change the composition of cyanobacterial species. Though we studied physical and chemical factors intensely enough, we still are not able to predict the change in the composition of cyanobacterial blooms, because of plankton system in a chaotic behavior.

The role of plants in channel-dyke and field irrigation systems for domestic wastewater treatment in an integrated eco-engineering system

Eight kinds of plants were tested in channel-dyke and field irrigation systems. The removal rates of TP, phosphate, TN, ammonia, CODcr and BOD, in the channel-dyke system with napiergrass (Pennisetum purpurem Schumach, x Pennisetum alopecuroides (L.) Spreng American) were 83.2, 82.3, 76.3, 96.2, 73.5 and 85.8%, respectively. The field irrigation systems with rice I-yuanyou No.1(88-132) (Oryza sativa L.) and rice II- suakoko8 (Oryza glaberrima) had high efficiency for N removal; the removal rate were 84.7 and 84.3%, respectively. The mass balance data revealed that napiergrass, rice I and II were the most important nutrient sinks, assimilating more than 50% of TP and TN. Plant uptake of N and P as percentage of total removal from wastewater correlated with biomass yield of and planting mode. (C) 2000 Elsevier Science B.V. All rights reserved.

Luminescence emission originating from nitrogen doping of beta-Ga2O3 nanowires

Nitrogen-doped beta-Ga2O3 nanowires (GaO NWs) were prepared by annealing the as-grown nanowires in an ammonia atmosphere. The optical properties of the nitrogen-doped GaO NWs were studied by measurements of the photoluminescence and phosphorescence decay at the temperature range between 10 and 300 K. The experimental results revealed that nitrogen doping in GaO NWs induced a novel intensive red-light emission around 1.67 eV, with a characteristic decay time around 136 mus at 77 K, much shorter than that of the blue emission (a decay time of 457 mus). The time decay and temperature-dependent luminescence spectra were calculated theoretically based on a donor-acceptor pair model, which is in excellent agreement with the experimental data. This result suggests that the observed novel red-light emission originates from the recombination of an electron trapped on a donor due to oxygen vacancies and a hole trapped on an acceptor due to nitrogen doping.

Large-scale synthesis of single-phase, high-quality GaN nanocrystallites

Large-scale synthesis of high-quality GaN nano-crystallites has been achieved by direct reaction of a 4:1 molar Ga/Ga2O3 mixture with ammonia at 950degreesC. X-ray diffraction, transmission electron microscopy, selected-area electron diffraction and high-resolution transmission electron microscopy revealed that the produced GaN nanocrystallites were single hexagonal wurtzite structure with an average particle size around 45 nm. A sharp near band edge emission peak and a blue light emission peak were observed in photoluminescence spectroscopy. The synthesis approach is simple and easy to be commercialized.

The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE

We describe the growth of GaN on Si(111) substrates with AlxGa1-xN/AlN buffer layer by ammonia gas source molecular beam epitaxy (NH3-GSMBE). The influence of the AlN and AlxGa1-xN buffer layer thickness and the Al composition on the crack density of GaN has been investigated. It is found that the optimum thickness is 120 and 250 nm for AlN and AlxGa1-xN layers, respectively. The optimum Al composition is between 0.3 < x < 0.6. (c) 2005 Elsevier B.V. All rights reserved.

Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE

Al0.58Ga0.42N epilayers are grown by ammonia gas source molecular beam epitaxy (NH3-MBE) on (0001) sapphire substrate using AlGaN buffer layer. The effects of the buffer layer growth temperature on the properties of Al0.58Ga0.42N epilayer are especially investigated. In-situ high-energy electron diffraction (RHEED), double-crystal X-ray diffraction (DCXRD), atomic force microscopy (AFM), photoconductivity measurement and cathodoluminescence (CL) are used to characterize the samples. It is found that high growth temperature of AlGaN buffer layer would improve the crystalline quality, surface smoothness, optical quality and uniformity of the Al0.58Ga0.42N epilayer. The likely reason for such improvements is also suggested. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

The Al composition of metalorganic chemical vapor deposition (MOCVD)-grown AlGaN alloy layers is found to be greatly influenced by the parasitic reaction between ammonia (NH3) and trimethylaluminum (TMAI). The growth process of AlN is carefully investigated by monitoring the in situ optical reflection. The abnormal dependencies of growth rate on growth temperature, reactor pressure, and flux of NH3 are observed and can be well explained by the effect of parasitic reaction. The increase of growth rate with increasing flux of TMAI is found to depend on the growth temperature and reactor pressure due to the presence of parasitic effect. A relatively low growth temperature and a reduced reactor pressure are suggested for the effective decrease of parasitic reaction during the MOCVD growth of AlN and probably lead to a more effective incorporation of Al into the AlGaN layers. (c) 2005 Elsevier B.V. All rights reserved.

Magnetism and luminescence evolution due to nitrogen doping in manganese-gallium oxide nanowires

We report a new method for large-scale production of GaMnN nanowires, by annealing manganese-gallium oxide nanowires in flowing ammonia at high temperature. Microstructure analysis indicates that the GaMnN nanowires have wurtzite GaN structure without Mn precipitates or Mn-related second phases. Magnetism evolution due to nitrogen doping in manganese-gallium oxide nanowires was evaluated by magnetic measurements. Magnetic measurement reveals that the magnetization increases with the increase of nitrogen concentration. Ferromagnetic ordering exists in the GaMnN nanowires, whose Curie temperature is above room temperature. Luminescence evolution was investigated by the cathodoluminesence measurement for a single nanowire and photoluminescence measurement in a temperature range between 10 and 300 K. Experimental results indicate that optical properties can be modulated by nitrogen doping in manganese-gallium oxide nanowires. (c) 2005 Elsevier B.V. All rights reserved.

Structural properties and Raman measurement of AlN films grown on Si (111) by NH3-GSMBE

Epitaxial growth of AlN has been performed by molecular beam epitaxy (MBE) with ammonia. The structural properties of materials were studied by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD), and atomic force microscopy (AFM). XRD and TEM diffraction pattern confirm the AlN is single crystalline 2H-polytype with the epitaxial relationship of (0001)AlNparallel to(111)Si, [11 (2) over bar0](AlN)parallel to[110](Si), [10 (1) over bar0](AlN)parallel to[11 (2) over bar](Si). Micro-Raman scattering measurement shows that the E-2 (high) and A(1) (LO) phonon mode shift 9 cm(-1) toward the low frequency, which shows the existence of large tensile strain in the AlN films. Furthermore, the appearance of forbidden A, (TO) mode and its anomalous shift toward high frequency was found and explained. (C) 2002 Elsevier Science B.V. All rights reserved.

In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD

The heteroepitaxial growth of n-type and p-type 3C-SiC on (0001) sapphire substrates has been performed with a supply of SiH4+C2H4+H-2 system by introducing ammonia (NH3) and diborane (B2H6) precursors, respectively, into gas mixtures. Intentionally incorporated nitrogen impurity levels were affected by changing the Si/C ratio within the growth reactor. As an acceptor, boron can be added uniformly into the growing 3C-SiC epilayers. Nitrogen-doped 3C-SiC epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated.

Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN

A quasi-thermodynamic model of metalorganic vapor phase epitaxy (MOVPE) growth of GaxAlyIn1-x-yN alloys has been proposed. In view of the complex growth behavior of GaxAlyIn1-x-yN, we focus our attention on the galliumrich quaternary alloys that are lattice matched to GaN, In0.15Ga0.85N or Al0.15Ga0.85N, which are widely used in the GaN-based optoelectronic devices. The relationship between GaAlInN alloy composition and input molar ratio of group III metalorganic compounds at various growth conditions has been calculated. The influence of growth temperature, nitrogen fraction in the carrier gas, input partial pressure of group III metalorganics, reactor pressure, V/III ratio and the decomposition rate of ammonia on the composition of deposited alloys are studied systematically. Based on these calculated results, we can find out the appropriate growth conditions for the MOVPE growth of GaxAlyIn1-x-yN alloy lattice matched to GaN, In0.15Ga0.85N or Al0.15Ga0.85N. (C) 2002 Elsevier Science B.V. All rights reserved.