In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
Data(s) |
2002
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Resumo |
The heteroepitaxial growth of n-type and p-type 3C-SiC on (0001) sapphire substrates has been performed with a supply of SiH4+C2H4+H-2 system by introducing ammonia (NH3) and diborane (B2H6) precursors, respectively, into gas mixtures. Intentionally incorporated nitrogen impurity levels were affected by changing the Si/C ratio within the growth reactor. As an acceptor, boron can be added uniformly into the growing 3C-SiC epilayers. Nitrogen-doped 3C-SiC epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY .In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD ,SILICON CARBIDE AND RELATED MATERIALS 2001 PTS 1 AND 2 PROCEEDINGS,2002,389-3(0):339-342 |
Palavras-Chave | #半导体材料 #3C-SiC #in-situ doping #low-pressure CVD #sapphire substrate #CHEMICAL-VAPOR-DEPOSITION #COMPETITION EPITAXY |
Tipo |
期刊论文 |