Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition

Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get highly qualitical 4H-SiC epilayers.Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates is performed at 1500℃ with a pressure of 1.3×103Pa by using the step-controlled epitaxy.The growth rate is controlled to be about 1.0μm/h.The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope,atomic force microscopy (AFM),X-ray diffraction,Raman scattering,and low temperature photoluminescence (LTPL).N-type 4H-SiC epilayers are obtained by in-situ doping of NH3 with the flow rate ranging from 0.1 to 3sccm.SiC p-n junctions are obtained on these epitaxial layers and their electrical and optical characteristics are presented.The obtained p-n junction diodes can be operated at the temperature up to 400℃,which provides a potential for high-temperature applications.

Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask

We proposed a new method to suppress the crystallographic tilt in the lateral epitaxial overgrowth of GaN by using an oxide mask with a newly designed pattern. A rhombus mask with edges oriented in the direction of <10 - 10>(GaN) was used instead of the traditional stripe mask. The morphology evolution during the LEO GaN with the rhombus mask was investigated by SEM, and the crystallographic tilt in the LEO GaN was measured by DC-XRD. It is found that using the new rhombus mask can decrease the crystallographic tilt in the LEO GaN. In addition, this method makes the ELO GaN stripes easy to coalesce. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC

Homoepitaxial growth of SiC on a Si-face (0 0 0 1) GH-SIC substrate has been performed in a modified gas-source molecular beam epitaxy system with Si2H6 and C2H4 at temperatures ranging 1000 1450 degreesC while keeping a constant SiC ratio (0.7) in the gas phase. X-ray diffraction patterns, Raman scattering measurements. and low-temperature photoluminescence spectra showed single-crystalline SiC. Mesa-type SiC p-n junctions were obtained on these epitaxial layers, and their I-V characteristics are presented. (C) 2001 Elsevier Science B.V. All rights reserved.

Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)

Raman scattering measurement has been used to study the residual strains in the thin 3C-SiC/Si(001) epilayers with a variation of film thickness from 0.1 to 1.2 mu m. which were prepared by chemical vapor deposition (CVD)growth. Two methods have been exploited to figure our the residual strains and the exact LO bands. The final analyzing results show that residual strains exist in the 3C-SiC epilayers. The average stress is 1.3010 GPa, and the relative change of the lattice constant is 1.36 parts per thousand. Our measurements also show that 3C-SiC phonons are detectable even for the samples with film thickness in the range of 0.1 to 0.2 mu m. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

Strain relaxation in initially flat SiGe film on Si(1 0 0) during rapid thermal annealing is studied. The surface roughens after high-temperature annealing, which has been attributed to the intrinsic strain in the epilayers. It is interesting to find that high-temperature annealing also results in roughened interface, indicating the occurrence of preferential interdiffusion. It is suggested that the roughening at the surface makes the intrinsic strain in the epilayer as well as the substrate unequally distributed, causing preferential interdiffusion at the SiGe/Si interface during high-temperature annealing. (C) 1999 Elsevier Science B.V. All rights reserved.

Weak epitaxy growth and phase behavior of planar phthalocyanines on p-sexiphenyl monolayer film

We systematically investigated the weak epitaxy growth (WEG) behavior of a series of planar phthalocyanine compounds (MPc), i.e., metal-free phthalocyanine (H2PC), nickel phthalocyanine (NiPc), copper phthalocyanine (CuPc), zinc phthalocyanine (ZnPc), iron phthalocyanine (FePc); cobalt phthalocyanine (CoPc), grown on a p-sexiphenyl (p-6P) monolayer film by selected area electron diffraction (SAED) and atomic force microscopy (AFM). Two types of epitaxial relations, named as incommensurate epitaxy and commensurate epitaxy, were identified between phthalocyanine compounds and the substrate of the p-6P film.

Weak Epitaxy Growth of Copper Hexadecafluorophthalocyanine (F16CuPc) on p-Sexiphenyl Monolayer Film

Weak epitaxy growth (WEG) behavior and mechanism of copper hexadecafluorophthalocyanine (F16CuPc) on p-sexiphenyl (p-6P) monolayer film were investigated by atomic force microscopy (AFM), selected area electron diffraction (SEAD), and wide-angle X-ray diffraction (WAXD). High-quality F16CuPc films with high order, large size, and molecular-level smoothness were obtained successfully by WEG method. It was identified that there exists incommensurate epitaxial relation between highly oriented F16CuPc and p-6P films. The geometrical channels of p-6P monolayer surface induce the nucleation and growth of F16CuPc molecules.

Isochiral form II of syndiotactic polypropylene produced by epitaxial crystallization

Epitaxial crystallization of syndiotactic polypropylene (sPP) on 2-quinoxalinol (2-Quin) yields, in the lower part of the crystallization range, the less common and metastable form II based on the packing of isochiral helices, rather than the stable antichiral form I. The contact plane is (110)(II). Form II exits only as a thin layer (< 50 nm) near the substrate surface. During further growth away from the surface, a transition takes place to the disordered form I, observed in "conventional" thin film growth. The epitaxial relationship rests only partly on dimensional matching with the chain axis repeat distance (which would be valid for both forms I and II) and on interchain distances. Whereas a better dimensional match would be achieved with form I, selection of the isochiral form II results from better correspondence of the surface topographies of the deposit (110)(II) sPP and substrate 2-Quin (001) contact faces.

Epitaxial recrystallization of HDPE-quenched ultrathin films on oriented iPP substrates

The recrystallization behavior of high-density polyethylene (HDPE) on the highly oriented isotactic polypropylene (iPP) substrates at temperatures below the melting temperature of HDPE has been investigated by means of transmission electron microscopy. The results obtained by the bright-field observation and the electron diffraction show that upon annealing the HDPE-quenched films on the oriented iPP substrates at temperatures below 125 degrees C, only a small amount of HDPE recrystallizes on the iPP substrate with [001](HDPE)//[001](iPP), while annealing the HDPE-quenched films at temperatures above 125 degrees C, all of the HDPE crystallites recrystallize epitaxially on the iPP substrate with [001](HDPE)//[101](iPP). (C) 1997 John Wiley & Sons, Inc.

EPITAXIAL CRYSTALLIZATION OF TRANS-1,4-POLYBUTADIENE ON HIGHLY ORIENTED ISOTACTIC POLY(PROPYLENE) FILMS

Epitaxial crystallization of trans-1,4-polybutadiene (PBD) on highly oriented isotactic poly(propylene) (iPP) has been investigated at different crystallization temperatures and rates. From electron microscopy and electron diffraction, it is confirmed that epitactic growth of the low-temperature modification (monoclinic) with microcrystals of PBD on the iPP films takes place with their chain directions about +/- 50-degrees apart. No epitaxial relationship occurs between the high-temperature modification (hexagonal) of PBD and the iPP substrate. Thermal analyses of PBD-PP layered films indicate that the epitaxy has an important effect on the formation of the high-temperature modification of PBD.

EPITAXIAL CRYSTALLIZATION OF SYNDIOTACTIC POLYPROPYLENE ON UNIAXIALLY ORIENTED POLYETHYLENE

The epitaxial crystallization of syndiotactic polypropylene (sPP) on uniaxially oriented polyethylene (PE) has been investigated by electron microscopy and electron diffraction. It is found that the sPP lamellae grow epitaxially on the PE substrate film with the preference in sPP for the b axis as the fast growth direction. Instead of 50-degrees as in the system of isotactic polypropylene with PE, the molecular chains of the sPP crystals are approximately +/- 37-degrees inclined to the chain direction of PE.