Coherent laser control in attosecond sum-frequency polarization beats using twin noisy driving fields

Based on the phase-conjugate polarization interference between two-pathway excitations, we obtained an analytic closed form for the second-order or fourth-order Markovian stochastic correlation of the V three-level sum-frequency polarization beat (SFPB) in attosecond scale. Novel interferometric oscillatory behavior is exposed in terms of radiation-radiation, radiation-matter, and matter-matter polarization beats. The phase-coherent control of the light beams in the SFPB is subtle. When the laser has broadband linewidth, the homodyne detected SFPB signal shows resonant-nonresonant cross correlation, a drastic difference for three Markovian stochastic fields, and the autocorrelation of the SFPB exhibits hybrid radiation-matter detuning terahertz damping oscillation. As an attosecond ultrafast modulation process, it can be extended intrinsically to any sum frequency of energy levels. It has been also found that the asymmetric behaviors of the polarization beat signals due to the unbalanced controllable dispersion effects between the two arms of interferometer do not affect the overall accuracy in case using the SFPB to measure the Doppler-free energy-level sum of two excited states.

NEAR-RESONANT RAMAN-SCATTERING FROM GAAS/ALAS SUPERLATTICES

This article presents the results of near-resonant Raman scattering measurements on GaAs/AlAs superlattices at room temperature. A strong enhancement of GaAs LO phonon-even modes resulted owing to a dipole-allowed Frohlich interaction in superlattices. Similar to the previous results, the LO phonon-even modes in a polarized configuration are observed. In contrast to previous work, however, what we observed in depolarized configurations is the LO phonon-odd modes instead of even modes. It is confirmed that the selection rules for near-resonant Raman scattering from LO phonons in this kind of superlattices are the same as those for off-resonant scattering. From the second-order Raman scattering, it is confirmed that polarized second-order Raman scattering spectra consist of overtones and combinations of two even modes, and depolarized second-order Raman scattering spectra consist of combinations of an even mode and an odd mode. Our experimental results coincide with the predictions using the recently developed Huang-Zhu model. A brief discussion on interface modes and their combination with confined modes is also presented.

NEAR-RESONANCE RAMAN-SCATTERING OF LONGITUDINAL OPTICAL PHONON MODES AND INTERFACE MODES IN GAAS/ALAS SUPERLATTICES

The near-resonance Raman scattering of GaAs/AlAs superlattices is investigated at room temperature. Owing to the resonance enhancement of Frohlich interaction, the scattering intensity of even LO confined modes with A1 symmetry becomes much stronger than that of odd modes with B2 symmetry. The even modes were observed in the polarized spectra, while the odd modes appear in the depolarized spectra as in the off-resonance case. The second-order Raman spectra show that the polarized spectra are composed of the overtone and combinations of even modes, while the depolarized spectra are composed of the combinations of one odd mode and one even mode. The results agree well with the selection rules predicted by the microscopic theory of Raman scattering in superlattices, developed recently by Huang and co-workers. In addition, the interface modes and the combinations of interface modes and confined modes are also observed in the two configurations.

CALCULATION OF SPIN-REORIENTATION TEMPERATURE IN ND2FE14B

The spin-reorientation phenomenon in Nd2Fe14B has been investigated using an angular dependent free energy approach. A magnetic Hamiltonian which includes the crystal electric field term and the exchange term has been established using realistic band structure results. The temperature dependence of the molecular field is accounted for by introducing the Brillouin function and the magnetic Hamiltonian is diagonalized within the ground state multiplet of the Nd ion. The eigenstates are then used to form the partition function for the free energy. At each temperature, the direction of the molecular field is obtained by searching for the minimum in the angular parameter space of the free energy. Our calculations show that for Nd2Fe14B, the net magnetic anisotropy direction is canted away from the c axis at a temperature close to the experimentally reported spin-reorientation temperature of 150 K. The temperature dependence of the magnetic structure is found to be very sensitive to the size of the second order crystal field parameter B20.

2-DELTA-FUNCTION GENERALIZED PLASMA POLE MODEL FOR 1ST PRINCIPLE CALCULATIONS OF QUASI-PARTICLE ENERGIES IN MANY-ELECTRON SYSTEMS

To evaluate the dynamical effects of the screened interaction in the calculations of quasiparticle energies in many-electron systems a two-delta-function generalized plasma pole model (GPP) is introduced to simulate the dynamical dielectric function. The usual single delta-function GPP model has the drawback of over simplifications and for the crystals without the center of symmetry is inappropriate to describe the finite frequency behavior for dielectric function matrices. The discrete frequency summation method requires too much computation to achieve converged results since ab initio calculations of dielectric function matrices are to be carried out for many different frequencies. The two-delta GPP model is an optimization of the two approaches. We analyze the two-delta GPP model and propose a method to determine from the first principle calculations the amplitudes and effective frequencies of these delta-functions. Analytical solutions are found for the second order equations for the parameter matrices entering the model. This enables realistic applications of the method to the first principle quasiparticle calculations and makes the calculations truly adjustable parameter free.

On the soft wall guiding potentials in realistic quantum waveguides

A transfer matrix method is presented for the study of electron conduction in a quantum waveguide with soft wall lateral confinement. By transforming the two-dimensional Schrodinger equation into a set of second order ordinary differential equations, the total transfer matrix is obtained and the scattering probability amplitudes are calculated. The proposed method is applied to the evaluation of the electron transmission in two types of cavity structure with finite-height square-well confinement. The results obtained by our method, which are found to be in excellent agreement with those from another transfer matrix method, suggest that the infinite square-well potential is a good approximation to finite-height square-well confinement for electrons propagating in the ground transverse mode, but softening of the walls has an obvious effect on the electron transmission and mode-mixing for propagating in the excited transverse mode. (C) 1996 American Institute of Physics.

An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning

An asymmetric MOSFET-C band-pass filter(BPF)with on chip charge pump auto-tuning is presented.It is implemented in UMC (United Manufacturing Corporation)0.18μm CMOS process technology. The filter system with auto-tuning uses a master-slave technique for continuous tuning in which the charge pump OUtputs 2.663 V, much higher than the power supply voltage, to improve the linearity of the filter. The main filter with third order low-pass and second order high-pass properties is an asymmetric band-pass filter with bandwidth of 2.730-5.340 MHz. The in-band third order harmonic input intercept point(HP3) is 16.621 dBm,wim 50 Ω as the source impedance. The input referred noise iS about 47.455μVrms. The main filter dissipates 3.528 mW while the auto-tuning system dissipates 2.412 mW from a 1.8 V power supply. The filter with the auto-tuning system occupies 0.592 mm~2 and it can be utilized in GPS (global positioning system)and Bluetooth systems.

High-Power Distributed Feedback Laser Diodes Emitting at 820nm

By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide（RW） AlGaInAs/AlGaAs distributed feedback（DFB） laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.

Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate

GaN buffer layers (thickness ～60nm) grown on GaAs(001) by low-temperature MOCVD are investigated by X-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of GaN on GaAs(001) substrates. In addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the X-ray diffraction pole figures. Moreover, { 111 } q scans with χ at 55° reveal the abnormal distribution of Bragg diffractions. The extra intensity maxima in the pole fig ures shows that the process of twinning plays a dominating role during the growth process. It is suggested that the polarity of { 111 } facets emerged on (001) surface will affect the growth-twin nucleation at the initial stages of GaN growth on GaAs(001) substrates. It is proposed that twinning is prone to occurring on { 111 } B, N-terminated facets.

Silicon: the promising material for phontonic integrated circuits platform

The development of optical network demands integrated arid multiple functionality modules to lowing cost and acquire highly reliability. Among the various contender materials to be photonic integrated circuits platform, silicon exhibits dominant characteristics and is the most promising platform materials. The paper compares the characteristics of some candidate materials with silicon and reviews recent progress in silicon based photonic integration technology. Tile challenges to silicon for optical integration for optical networking application arc also indicated.

Surface Emitting Distributed Feedback Quantum Cascade Laser around 8.3 mu m

We demonstrate surface emitting distributed feedback quantum cascade lasers emitting at wavelengths from 8.1 mu m at 90 K to 8.4 mu m at 210 K. The second-order metalized grating is carefully designed using a modified coupled-mode theory and fabricated by contact lithography. The devices show single mode behavior with a side mode suppression ratio above 18 dB at all working temperatures. At 90 K, the device emits an optical power of 101 mW from the surface and 199 mW from the edge. In addition, a double-lobe far-field pattern with a separation of 2.2 degrees is obtained in the direction along the waveguide.

Parallel Fully-Implicit Computation of Magnetohydrodynamics Acceleration Experiments

A three-dimensional MHD solver is described in the paper. The solver simulates reacting flows with nonequilibrium between translational-rotational, vibrational and electron translational modes. The conservation equations are discretized with implicit time marching and the second-order modified Steger-Warming scheme, and the resulted linear system is solved iteratively with Newton-Krylov-Schwarz method that is implemented by PETS,: package. The results of convergence tests arc plotted, which show good scalability and convergence around twice faster when compared with the DPLR method. Then five test runs are conducted simulating the experiments done at the NASA Ames MHD channel, and the calculated pressures, temperatures, electrical conductivity, back EMF, load factors and flow accelerations are shown to agree with the experimental data. Our computation shows that the electrical conductivity distribution is not uniform in the powered section of the MHD channel, and that it is important to include Joule heating in order to calculate the correct conductivity and the MHD acceleration.

HIRFL剥离器后切束线物理设计

HIRFL is a tandem cyclotron complex for heavy ion. On the beam line between SFC and SSC, there is a stripper. Behind it, the distribution of charge states of beam is a Gauss distribution. The equilibrium charge state Q_0 is selected by 1BO2(a 50° dipole behind the stripper) and delivered to SSC. One of two new small beam line (named SLAS) after 1B02 will be builded in or der to split and deliver the unused ions of charge states (Q_0 ± n) to aspecific experimental area. Q_0 ± n ions are septumed and separated from initial(Q_0) ion beam by two septum magnets SM1, SM2. The charge state selected by SM1 will be Q_0 ± 1(6 ≤ Q_0 < 17), Q_0 ± 2(17 ≤ Q_0 < 33) and Q_0 ± 3 (Q_0 ≥ 33) forming a beam in one of the two possine new beam line with the stripping energy of (0.2 to 9.83 Mev/A), an emittance of 10π mm.mrad in the two transverse planes and an intensity ranging from 10~(11) pps for z ≤ 10 to some 10~5 pps for the heaviest element. Behind SM2, a few transport elements (three dipoles and seven qudrupoles) tra nsport Q_0 ± n beam to target positions T1, T2 (see fig. 1) and generate small beam spots (φ ≤ 4mm, φ ≤ 6mm). The optics design of the beam line has been done based on SLAC-75 (a first and second - order matrix theory). beam optics calculation has been worked out with the TRANSPORT program. The design is a very economical thinking, because without building a new accelerator we can obtain a lower energy heavy ion beam to provide for a lot of atomic and solid state physical experiments

Computational study on the addition of HCN to methanimine catalyzed by formamidine and formamide

In this paper, we have carried out a theoretical study on the addition of HCN to methanimine with formamidine or formamide using second-order Moller-Plesset perturbation (MP2) method with 6-31 + G(d,p) basis sets. At MP2 level. a high-energy, intermediate has been located for each pathway. The addition of HCN to methanimine with formamidine has the lowest free energy barrier according to the calculations at MP2 level. (C) 2004 Elsevier B.V. All rights reserved.

Low-threshold conjugated polymer distributed feedback lasers on InP substrate

We demonstrate a low threshold polymer solid state thin-film distributed feedback (DFB) laser on an InP substrate with the DFB structure. The used gain medium is conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene] (MEH-PPV) doped polystyrene (PS) and formed by drop-coating method. The second order Bragg scattering region on the InP substrate gave rise to strong feedback, thus a lasing emission at 638.9nm with a line width of 1.2nm is realized when pumped by a 532nm frequency-doubled Nd: YAG pulsed laser. The devices show a laser threshold as low as 7 nJ/pulse.