NEAR-RESONANT RAMAN-SCATTERING FROM GAAS/ALAS SUPERLATTICES
Data(s) |
1992
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Resumo |
This article presents the results of near-resonant Raman scattering measurements on GaAs/AlAs superlattices at room temperature. A strong enhancement of GaAs LO phonon-even modes resulted owing to a dipole-allowed Frohlich interaction in superlattices. Similar to the previous results, the LO phonon-even modes in a polarized configuration are observed. In contrast to previous work, however, what we observed in depolarized configurations is the LO phonon-odd modes instead of even modes. It is confirmed that the selection rules for near-resonant Raman scattering from LO phonons in this kind of superlattices are the same as those for off-resonant scattering. From the second-order Raman scattering, it is confirmed that polarized second-order Raman scattering spectra consist of overtones and combinations of two even modes, and depolarized second-order Raman scattering spectra consist of combinations of an even mode and an odd mode. Our experimental results coincide with the predictions using the recently developed Huang-Zhu model. A brief discussion on interface modes and their combination with confined modes is also presented. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
HAN HX; WANG ZP; LI GH; JIANG DS; PLOOG K.NEAR-RESONANT RAMAN-SCATTERING FROM GAAS/ALAS SUPERLATTICES,CHINESE PHYSICS,1992,12(4):846-852 |
Palavras-Chave | #半导体物理 #GAAS-ALAS SUPERLATTICES #INTERFACE VIBRATIONAL-MODES #CONFINED LO #PHONONS |
Tipo |
期刊论文 |