自发有序Ga��0.5）In（0.5）P合金的喇曼光谱研究

于2010-11-23批量导入

GaAs/Al（0.3）Ga��0.7）As短周期超晶格中负微分电导效应的观察

于2010-11-23批量导入

低压-金属有机物汽相外延生长的Ga��1-x）InxAs/InP激光器中深能级的研究

应用深能级瞬态谱(DLTS)技术详细研究低压-金属有机物汽相外延(LP-MOVPE)生长的Ga_(0.74)In_(0.53)As/InP量子阱、宽接触和质子轰击条形异质结激光器中的深能级。样品的DLTS表明,在宽接触激光器的i-Ga_(0.47)In(0.53)As有源层里观察到 H1(Ev+0.09eV)和E1(E_c-0.35eV)陷阱,它们可能分别与样品生长过程中扩散到i-Ga_(0.47)In_(0.53)As有源层的Zn和材料本身的原生缺陷有关。而条形激光器的i-Ga_(0.47)In_(0.53)A_s有源层的 H_2(E_v+0.11eV)和 E_2(E_q-0.42eV)陷阱则可能是H1和E1与质子轰击引起的损伤相互作用的产物 。

GaAs/Al（0.4）Ga��0.6）As多量子肼红外探测器光吸收计算

于2010-11-23批量导入

GaAs/Al（0.33）Ga��0.67）As短周期超晶格中能带不连续性随压力的变化

于2010-11-23批量导入

GaAs/Ga��0.7）Al（0.3）超晶格中场致激子峰展宽机制的研究

于2010-11-23批量导入

GaAs/Ga��0.7）Al（0.3）As短周期超晶格中的自电光双稳和多稳态效应

国家自然科学基金

MBE[（GaAs）l（Ga��1-x）AlxAs）m]n/GaAs（001）一维超晶格的X射线双晶...

于2010-11-23批量导入

High-mobility Ga-polarity GaN achieved by NH3-MBE

GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm(2)/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.

Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing

The quantum well intermixing of Ga(In)NAs/GaAs simple quantum well (SQW) using SiO2 encapsulation and rapid thermal annealing has been studied. Obvious enhanced intermixing of GaInNAs/GaAs SQW was observed due to the localized SiO2 capping layer and RTA at temperature between 650degreesC and 900degreesC. The selective intermixing strongly depends on N composition and In composition. An obvious selective intermixing had been found in the samples with small N composition and/or high In composition.