1.3μm Si-Based MOEMS Optical Tunable Filter with a Tuning Range of 90nm

Optical filters capable of single control parameter-based wide tuning are implemented and studied. A prototype surface micromachined 1.3μm Si-based MOEMS (micro-opto-electro-mechanical-systems) tunable filter exhibits a continuous and large tuning range of 90 nm at 50 V tuning voltage. The filter can be integrated with Si-based photodetector in a low-cost component for coarse wavelength division multiplexing systems operating in the 1.3μm band.

GaAs/AlGaAs谐振腔增强型光探测器的实现及其特性研究

报导GaAs/AlGaAs谐振腔增强型(RCE)光探测器的实验研究结果,并对器件的特性进行了理论分析。通过实验验证了RCE器件谐振腔两个镜面的反射率随着波长的变化以及器件分层结构折射率差二者对器件性能的影响,并证明了分析理论的正确性。

1.3 mu m GaInNAs/GaAs quantum well lasers and photodetectors

The growth of GalnNAs/GaAs quantum well (QW) has been investigated by solid-source molecular beam epitaxy (MBE). N was introduced by a dc-active plasma source. Highest N concentration of 2.6% in GaInNAs/GaAs QW was obtained, corresponding to the photoluminescence peak wavelength of 1.57 mum at 10K. The nitrogen incorporation behavior in MBE growth and the quality improvement of the QW have been studied in detail. 1.3 mum GaInNAs/GaAs SQW laser and MQW resonant-cavity enhanced photodetector have been achieved.

VCSEL based optoelectronic multiple chip modules

We report on optoelectronic multiple chip modules, consisting of vertical cavity surface emitting laser(VCSEL), photodetector and 1.2 mum CMOS electronic circuit, The hybrid integrated components operate at a date rate of 155Mb/s, which could be used in optical interconnects for multiple computers.

Normal-incident SiGe/Si MQWs photodetectors operating at 1.3 mu m

A normal-incident SiGe/Si multiple quantum wells (MQWs) photodetector was reported. The structure and fabrication process of the photodetector were introduced. The photocurrent spectra measurement showed that the response spectra was expanded to 1.3 mu m wavelength. The quantum efficiency of the photodetector was 0.1% at 1.3 mu m and 20% at 0.95 mu m.

Asymmetric dark current in double barrier quantum well infrared photodetectors

Asymmetric dark current and photocurrent versus voltage characteristic in the Double Barrier Quantum Wells (DBQWs) photovoltaic infrared photodetector has been studied. A model based on asymmetric potential barriers was proposed. The asymmetric potential thick barrier, which due to the Si dopant segregation during growth makes a major contribution to the asymmetrical I-V characteristic, calculations based on our model agree well with experimental results. This work also confirms the potential use of this DBQWs for infrared photodetector with large responsivity and little dark current under negative bias.

Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells

We report on the fabrication of circular waveguide photodetectors with a response near 1.3 mu m wavelength using SiGe/Si multiple quantum wells. The quantum efficiency of the circular waveguide photodetector is improved when compared with that of the rib waveguide photodetector in the same wavelength at 1.3 mu m The frequency response of the photodetectors is simulated. The emciency-bandwidth product of the circular waveguide photodetectors is improved correspondingly. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

Si-based optoelectronic devices and their attractive applications

The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped SixNy/Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 mu m wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.

Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers

Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearly perfectly vertically aligned in the growth direction [100]. The filtering effect on the QDs distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. Moreover, we observe a distinct infrared absorption from the sample in the range of 8.6-10.7 mu m. This indicates the potential of QDs multilayer structure for use as infrared photodetector.

高性能硅基锗光电探测器的研制

在信息产业、生物医学等科技领域越来越受关注的今天，新型光电子、光通信科技必将以更快的速度发展。Si基光电子集成采用成熟价廉的微电子加工工艺，将光学器件与多种功能的微电子电路集成，是实现光通信普及发展和光互连的有效途径。Si基光电探测器是Si基光通信系统的关键器件之一。随着近年来Si基Ge材料外延技术的突破性进展，Si基Ge光电探测器因为兼顾了Si基光电子集成和对光通讯波段(1.31和1.55μm)的高效探测，成为了当今研究的一大热点。
    半导体光电探测器的性能与其结构密切相关。PIN型光电探测器是最常见的探测器，可以普遍应用于光通讯光互连系统；雪崩光电二极管(APD)因为具有较高的响应度和内部增益，在实现单光子探测方面具备很大的优越性，适用于当今迅猛发展的生物光子学和量子信息学；共振腔增强型的光电探测器(RCE-PD)，集波长选择器、高速光信号接收器于一体，而且具备共振增强作用、高饱和功率输出等特点，是局域网、光纤入户和现代波分复用(Wavelength-Division Multiplexing,WDM)系统光通信网络的一种优选方案；波导结构探测器(Waveguide-PD)可以解除探测器的响应带宽和量子效率之间的矛盾，而且其结构特点更易于实现与调制器等光波导器件的集成，是片上光互连的首选探测器。
    本论文围绕高性能Si基Ge光电探测器这一研究目标，开展了多种结构的光电探测器的研制，包括PIN型PD的研制及其优化、吸收区与倍增区分离结构(SACM)的Ge-on-Si APD、RCE-PD和Waveguide-PD，主要研究结果如下：

1.                成功研制了PIN型Ge-on-Si光电探测器，器件在-1V外加偏压下暗电流密度为46.6mA/cm2，在1.31μm和1.55μm波长下器件的量子效率分别为40%和17%；然后改进了实验方法，在制作器件之前将Ge-on-Si材料在850℃条件下快速退火1分钟，从而改善材料质量，器件的暗电流密度降低至4mA/cm2，这是目前国际上报道的最好结果之一。

2.                研制出了PIN型Ge-on-SOI光电探测器，在1.31μm和1.55μm波长的量子效率分别为62%和25%。在-3V外加偏压下，器件的3dB带宽为12.6GHz。25μm直径器件，3dB带宽更是达到了13.4GHz。同时，制作了均匀性很好的1×4探测器阵列，单个器件的3dB带宽达13.3GHz。

3.                在国际上首次研究了硅基锗光电探测器的高饱和特性。在-1V和-2V外加偏压下，探测器的1-dB小信号压缩电流分别为22mA和40mA,相应的光功率分别为67.5mW和110.5mW。

4.                成功研制了吸收区和倍增区分离的Si基Ge雪崩光电二极管，器件的穿通电压Vpt约为29V，击穿电压Vbd(暗电流等于100μA时的电压)为39.5V。在击穿电压附近，如39V时，SACM-Ge-on-Si APD的增益为40。

5.                解决了背面ICP深刻蚀工艺难题，成功制备了中心波长在1.55μm，量子效应高达62%的共振腔增强型Si基Ge光电探测器。