放大自发辐射对全固态激光器调Q性能的影响

为定量分析放大自发辐射（ASE）对调Q激光器性能的影响，在调Q激光速率方程中引入放大自发辐射项。并在合理的近似下求解，给出了激光二极管（LD）端面抽运电光调Q运转的固体激光器反转粒子数的建立过程，分析了放大自发辐射对激光上能级储能效率的影响及考虑放大自发辐射时调Q激光器输出脉冲宽度和脉冲能量随抽运功率的变化关系。结果表明，由于放大自发辐射的存在，上能级储能效率降低，且在一定的抽运功率下，调Q输出脉冲宽度变宽，脉冲能量下降。用LGS（La3Ga5SiO14）晶体作电光调Q元件，在激光二极管抽运的Nd：YVO

调Q双包层光纤激光器研究新进展

综述了近几年来在高能量输出（毫焦）、高重复频率（千赫兹）、纳秒级脉冲输出的调Q光纤双包层光纤激光器研究的最新进展，包括饱和吸收体和受激布里渊散射被动调Q、声光和电光主动调Q等，并分析各自的特点。最后讨论了国内外调Q双包层光纤激光器的研究现状和发展前景

声光调Q光纤激光器的窄脉冲输出

控制调Q器件声光开关的开门时间,在低的抽运功率(瓦级)下,成功实现了1～50kHz几十纳秒脉冲的激光输出。在重复频率50kHz下,获得了20mJ,35ns左右的脉冲输出,脉冲稳定性优于90%,光束质量为2.0左右。

空间用调Q偏振耦合输出棱镜谐振腔特性分析

为了优化棱镜谐振腔在调Q状态下的运转特性,充分利用琼斯矩阵光学分析棱镜谐振腔的特性,在不同材料棱镜情况下,比较了可变输出耦合率、泡克耳斯盒的消光比以及输出耦合率的调节.得到泡克耳斯盒在四分之一波长电压下能够得到比半波长电压更高的消光比,从而更适合在调Q工作状态下工作.

半导体可饱和吸收镜调Q的Yb：LSO激光器

报道了一个激光二极管（LD）抽运多波长连续输出的激光器和一个被动调Q的固体激光器。该激光器的增益材料是一种新型掺Yb^3＋的晶体Yb^3＋：Lu2SiO5（Yb^1LSO）。当吸收的抽运功率为2．57W时，连续输出的最大功率为490mW，斜率效率为22．2％，光-光转换效率为14．2％，激光阈值为299mW，输出激光波长为1084nm。多波长输出时，波长调谐范围为1034～1085nm。利用InGaAs可饱和吸收镜实现调Q输出时，斜率效率为3．0％，激光波长为1058nm。脉冲重复频率为25～39kHz，

Both stress experience and age determine the impairment or enhancement effect of stress on spatial memory retrieval

It has been documented that stress or glucocorticoids have conflicting effects on memory under different conditions. However, it is not fully understood why stress can either impair or enhance memory. Here, we have examined the performance of six age groups of Wistar rats in a water maze spatial task to evaluate the effects of stress under different conditions. We found that the impairment or enhancement effect of an 'elevated platform' (EP) stress on memory was dependent on previous stress experience and on age. EP stress impaired memory retrieval in water maze naive animals. but enhanced rather than impaired memory retrieval in young water maze stress-experienced animals. Furthermore, exogenously applied corticosterone or foot shock stress before water maze training prevented the impairment of memory retrieval that should be induced by treatment with corticosterone or foot shock before the 'probe trial'. Again, memory retrieval was enhanced in young animals under these conditions, and this enhancement can be prevented by the glucocorticoid receptor antagonist RU 38486. Thus, glucocorticoid receptor activation not only induced impairment of memory but also increased the capacity of young animals to overcome a later stress. The present findings suggest that the effect of stress on memory can be switched from impairment to enhancement dependent on both stress experience and age.

Optically controlled quantum dot gated transistors with high on/off ratio

We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. Laser light at 650 nm with a power of 850 pW switches the channel current from 5 mu A to 2 pA, resulting in an on/off ratio of more than 60 dB. The switch-off mechanism and carrier dynamics are analyzed with simulated band structure.

Comparison of Q-factors between TE and TM modes in 3-D microsquares by FDTD simulation

Mode characteristics of three-dimensional (3-D) microsquare resonators are investigated by finite-difference time-domain (FDTD) simulation for the transverse electric (TE)-like and the transverse magnetic (TM)-like modes. For a pillar microsquare with a side length of 2 pin in air, we have Q-factors about 5 X. 103 for TM-like modes at the wavelength of 1550 run, which are one order larger than those of TE-like modes, as vertical refractive index distribution is 3.17/3.4/3.17 and the cororresponding center layer thickness is 0.2 mu m. The mode field patterns show that TM-like modes have much weaker vertical radiation coupling loss than TE-like modes. TM-like modes can have high Q-factors in a microsquare with weak vertical field confinement.

Design of quantum cascade microcavity lasers based on Q factor versus etching depth

The choice of the etching depth for semiconductor microcavities is a compromise between a high Q factor and a difficult technique in a practical fabricating process. In this paper, the influences of the etching depth on mode Q factors for mid-infrared quantum cascade microcylinder and microsquare lasers around 4.8 and 7.8 mu m are simulated by three-dimensional (3D) finite-difference time-domain (FDTD) techniques. For the microcylinder and the microsquare resonators, the mode Q factors of the whispering-gallery modes (WGMs) increase exponentially and linearly with the increase in the etching depth, respectively Furthermore, the mode Q factors of some higher order transverse WGMs may be larger than that of the fundamental transverse WGM in 3D microsquares. Based on the field distribution of the vertical multilayer slab waveguide and the mode Q factors versus the etching depth, the necessary etching depth is chosen at the position where the field amplitude is 1% of the peak value of the slab waveguide. In addition, the influences of sidewall roughness on the mode Q factors are simulated for microsquare resonators by 2D FDTD simulation. (C) 2009 Optical Society of America

Mode analysis and Q-factor enhancement due to mode coupling in rectangular resonators

Modes in rectangular resonators are analyzed and classified according to symmetry properties, and quality factor (Q-factor) enhancement due to mode coupling is observed. In the analysis, mode numbers p and q are used to denote the number of wave nodes in the direction of two orthogonal sides. The even and odd mode numbers correspond to symmetric and antisymmetric field distribution relative to the midlines of sides, respectively. Thus, the modes in a rectangle resonator can be divided into four classes according to the parity of p and q. Mode coupling between modes of different classes is forbidden; however, anti-crossing mode coupling between the modes in the same class exists and results in new modes due to the combination of the coupled modes. One of the combined modes has very low power loss and high Q-factor based on far-field emission of the analytical field distribution, which agrees well with the numerical results of the finite-difference time-domain (FDTD) simulation. Both the analytical and FDTD results show that the Q-factors of the high Q-factor combined modes are over one order larger than those of the original modes. Furthermore, the general condition required to achieve high-Q modes in the rectangular resonator is given based on the analytical solution.

High-Q TM whispering-gallery modes in three-dimensional microcylinders

We present a generation condition for realizing high-Q TM whispering-gallery modes (WGMs) in semiconductor microcylinders. For microcylinders with symmetry or weak asymmetry vertical waveguiding, we show that TM WGMs can have a high Q factor, with the magnitude of 10(4) at the radius of the microcylinder of 1 mu m, by three-dimensional numerical simulation. The Q factor of TE WGMs is much less than that of TM WGMs in the semiconductor microcylinders due to a vertical radiation loss caused by mode coupling with the vertical propagating mode. The results open up a possible application of TM WGMs in semiconductor microcylinders for efficient current injection microlasers and single photon sources.

High Q-factor TM modes in three-dimensional semiconductor microresonators

We have investigated the mode characteristics for three-dimensional (3D) semiconductor microresonators by finite-difference time-domain (FDTD) technique. The results show that the quality-factors (Q-factors) of TM-like modes are much larger than those of TE-like modes as the vertical waveguidng formed by semiconductor materials.