Formation and magnetic properties of Fe16N2 films prepared by ion-beam-assisted deposition

Fe-N films containing the Fe16N2 phase were prepared in a high-vacuum system of ion-beam-assisted deposition (IBAD). The composition and structure of the films were analysed by Auger electron spectroscopy (AES) and X-ray diffraction (XRD), respectively. Magnetic properties of the films were measured by a vibrating sample magnetometer (VSM). The phase composition of Fe-N films depend sensitively on the N/Fe atomic arrival ratio and the deposition temperature. An Fe16N2 film was deposited successfully on a GaAs (1 0 0) substrate by IBAD at a N/Fe atomic arrival ratio of 0.12. The gram-saturation magnetic moment of the Fe16N2 film obtained is 237 emu/g at room temperature, the possible cause has been analysed and discussed. Hysteresis loops of Fe16N2 have been measured, the coercive force H-c is about 120 Oe, which is much larger than the value for Fe, this means the Fe16N2 sample exhibits a large uniaxial magnetocrystalline anisotropy. (C) 1998 Elsevier Science B.V. All rights reserved.

Kinetics of picosecond laser pulse induced charge separation and proton transfer in bacteriorhodopsin

Bacteriorhodopsin (BR) films oriented by an electrophoretic method are deposited on a transparent conductive ITO glass. A counterelectrode of copper and gelose gel is used to compose a sandwich-type photodetector with the structure of ITO/BR film/gelose gel/Cu. A single 30-ps laser pulse and a mode-locked pulse train are respectively used to excite the BR photodetector. The ultrafast failing edge and the bipolar response signal are measured by the digital oscilloscope under seven different time ranges. Marquardt nonlinear least squares fitting is used to fit all the experimental data and a good fitting equation is found to describe the kinetic process of the photoelectric signal. Data fitting resolves six exponential components that can be assigned to a seven-step BR photocycle model: BR-->K-->KL-->L-->M-->N-->O-->BR. Comparing tests of the BR photodetector with a 100-ps Si PIN photodiode demonstrates that this type of BIR photocletector has at least 100-ps response time and can also serve as a fast photoelectric switch. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

氧化物气敏半导体与H_2O(g)、O_2(g)及还原性气体相互作用的研究

本文采用自行设计的均速增加加热电压改变元件温度的方法以及动、静态气敏特性测试方法并借助其它测试手段（X光衍射、BET、扫描电流）系统地研究了表面电导控制型SnO_2系元件和体电导控制型γ-Fe_2O_3元件在变温过程中与H_2O(g)、O_2(g)和还原性气体相互作用的规律。实验结果表明：添加剂Al_2O_3、MgO、Pd、Pt和Sb_2O_3均对元件的体电阴均有调制作用。Al_2O_3是以微粒状存在于元件内，它为元件提供了活化中心，提高了元件的灵敏度。而γ-Fe_2O_3具有超微细结构。SnO_2系元件和γ-FeO_3元件取样电压(V_L)与温度（T）的变化关系在空气和惰性气氛中均是非线性的。材料组份不同的元件，其V_L～T变化规律不同。各元件在空气和惰性气氛中的变化，除阻值不同外，其V_L～T变化规律基本相同。综合考虑添加剂(Al_2O_3、MgO)和气氛（空气、惰性气氛、纯氧气）的影响，SnO_2系元件的V_L～T变化规律不仅是由于氧在元件表面上的吸附及吸附状态的不同所引起，很大程度上取决于元件材料的组成和温度对材料内载流子浓度和逐移率的影响。基于对SnO_2系元件的V_L～T变化规律的分析，γ-Fe_2O_3元件V_L随温度的变化也是由于环境中的氧和材料内载流子迁移率随温度的变化所致。SnO_2系元件和γ-Fe_2O_3元件在不同温度所测的V_L～T变化关系表明：SnO_2元件在低温(<72%RH)条件下，具有与干燥空气中相同的V_L～T变化关系；在高温度(>72%RH)的空气中，H_2O(g)的存在对元件低温区(<100 ℃) (200 ℃-400 ℃)的V_L值均有影响，在低温区的V_L值较干燥空气中的V_L值高；中温区的V_L值较干燥空气中的V_L值低。把在约98%RH的空气和氩气中的V_L～T变化曲线比较表明：中温区的实验现象是由于空气中H_2O(g)与O_2(g)共存所致。γ-Fe_2O_3元件在不同温气气氛中的V_L～T变化规律相同，且在元件工作温度（129 ℃～320 ℃）范围内V_L值相同，但均较干燥空气中该条件下的V_L值高。在实验中亦观察到SnO_2元件在温度低于72%RH中长期放置亦可观察到与实验中温度>72%RH条件下相同的V_L～T变化。SnO_2元件在空气和惰性气氛中对还原性气体均有气敏性。而且在惰性气氛中对微量还原性气体（H_2）的灵敏度比在空气中的灵敏度高。掺贵金属Pd或Pt的SnO_2元件在惰性气氛中，当H_2浓度高于8000ppm时，元件电导突变式增加。我们认为SnO_2系元件在空气中检测还原性气体的工作机理是表面化学反应过程；在惰性气氛中其工作机理是表面解离吸附过程。γ-Fe_2O_3元件在空气中对C_4H_(10)具有较高的选择性。但在惰性气氛中对还原性气体不具有气敏性。我们认为环境中氧是体电导控制型气敏元件气敏性不可缺少的中间媒介。其检测机理是微观可逆氧化-还原过程。

蹄蝠科的核型进化：比较染色体涂色、G带和C带分析

：与其姐妹科(菊头蝠科)相比，蹄蝠科的细胞遗传学研究较少。迄今为止，仅少数蹄蝠科几个物种有高分辨率的G带核型报道，且有关该科核型进化的大多数结论都是基于常规Giemsa染色研究而得。该研究利用三叶小蹄蝠的染色体特异探针，通过比较染色体涂色、G和C显带，建立了5种蹄蝠的染色体同源性图谱，并探讨了它们同源染色体间的G和C带异同。结果表明：罗伯逊易位、臂内倒位以及异染色质的扩增可能是蹄蝠科物种核型进化的主要机制。通过对这5种蹄蝠物种及其外群物种之间的同源染色体片段的比较分析，作者推测蹄蝠科的祖先核型并不像先前认为的全由端着丝粒染色体组成, 而应该含有中着丝粒染色体。

OXYGEN ANALYSES IN HIGH-TC SUPERCONDUCTING FILMS BY MEV PROTON ELASTIC BACKSCATTERING

A technique for analysis of total oxygen contents in high-T(c) superconducting films is demonstrated. It uses elastic backscattering (EBS) of 1.5-2.5 MeV protons. By comparing the H EBS spectra from substrate materials, the absolute oxygen content in the films can be easily calculated. It is estimated that the analysis can be accurate to better than 5% for YBCO films with thicknesses from several hundred angstroms to several microns. Comparisons with RBS are given and advantages of this technique are shown.

MEV PROTON ELASTIC BACKSCATTERING ANALYSIS OF SILICON-NITRIDE AND OXIDE LAYERS ON SILICON

A simple method for the analysis of concentration ratios N/Si and O/Si in silicon nitride and oxide layers on silicon substrate is presented. 1.95-MeV proton elastic backscattering was used to determine the composition and density. A comparison with 2.1-MeV helium Rutherford backscattering measurements is given. Results are in good agreement with each other. The method is especially useful to analyze samples of 20 000 angstrom or thicker layers. We conclude that these two techniques are complementary for the measurements of samples with different thickness. A brief discussion has been given on results.

PROTON-IMPLANTED NEW TYPE SILICON MATERIAL SUBJECTED TO 2-STEP FURNACE ANNEALING

A high-resistivity defect layer buried beneath the silicon surface layer by using proton implantation and two-step conventional furnace annealing is described. During the first annealing step (600-degrees-C), implanted hydrogen atoms move towards the damage region and then coalesce into hydrogen gas bubbles at the residual defect layer. During the second annealing step (1180-degrees-C) these bubbles do not move due to their large volume. Structural defects are formed around the bubbles at a depth of approximately 0.5-mu-m. The defect layer results in a high resistivity value. Experiments show that the quality of the surface layer has been improved because the surface Hall mobility increased by 20%. The sample was investigated by transmission electron microscopy.