Femtosecond laser pulse irradiation of Sb-rich AgInSbTe films: Scanning electron microscopy and atomic force microscopy investigations

The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm(2), 63.74 mJ/cm(2), respectively.

Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation

The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge2Sb2Te5 films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mJ/cm(2), respectively. (c) 2005 Elsevier B.V. All rights reserved.

UV-blue upconverted emission from Nd3+-doped InF3-based heavy-metal fluoride glasses for blue upconversion fibre laser

We report spectral properties and thermal stability of Nd3+-doped InF3-based heavy-metal fluoride glasses. Fluoroindate glasses in the chemical compositions (in mol%) of (38-x)InF3-16BaF(2)-20ZnF(2)-20SrF(2)-3GdF(3)-1GaF(3-)2NaF-xNdF(3) (x = 0.1, 0.5, 1, 2, 3) have been prepared under a controlled atmosphere in a dry box. Strong UVblue upconversion emission from a green excitation wavelength has been observed and the involved mechanisms have been explained. Near-infrared emission occurs simultaneously upon excitation of the UV-blue upconversion emissions with a cw Ar(+)laser. The upconversion spectra have revealed four dominant emissions at 354, 380, 412 and 449 nm, which belong to the transitions of D-4(3/2) -> I-4(9/2), D-4(3/2) -> I-4(11/2) and P-2(3/2) -> I-4(9/2), D-4(3/2) -> I-4(13/2) and P-2(3/2) -> I-4(11/2), D-4(3/2) -> I-4(15/2) and P-2(3/2) -> I-4(13/2), respectively.

单束飞秒激光在氧化铝晶体中诱导自组装微米点阵

报道了单束飞秒激光在氧化铝晶体中诱导自组装微米点阵的有关研究进展。当单束飞秒激光被透镜聚焦到氧化铝晶体的内部某固定点， 微米点阵就在聚焦点的下方自动生成。我们发现能否产生自组装点阵和光束的聚焦点距离样品表面的深度有关。通过比较在氧化铝晶体和氟化钙晶体中能够产生点阵的深度，我们发现在氧化铝中较浅的位置即能诱导出点阵，而在氟化钙中则要求深度较深。具体的机理在文中进行了讨论。

Broadband infrared luminescence from bismuth-doped GeS2-Ga2S3 chalcogenide glasses

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2S3 chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS(2)-20Ga(2)S(3):0.5Bi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum (FWHM) is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2S3 chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi+. Raman scattering is also conducted to clarify the structure of glasses. These Bi-doped GeS2-Ga2S3 chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.

Infrared (1.2-1.6 mu m) luminescence in Yb, Cr : YAG with 940 nm diode pumping

Infrared (1.2-1.6 mum) luminescence in a yttrium aluminium garnet (YAG) crystal, co-doped with Yb (10 at.%) and Cr (0.05 at.%) ions, was investigated under CW laser diode pumping (lambda = 940 nm). The Cr4+ emission band was observed with its peak at 1.35 mum and measured to be about 6% with respect to Yb3+ IR luminescence (lambda = 1.03 mum). Analysis of the crystal absorption and luminescence spectra allows one to conclude that Yb3+-Cr4+ energy transfer is a mechanism responsible for the B-3(2)(T-3(2))-B-3(1)((3)A(2)) emission of Cr4+ ions. This crystal is promising as an efficient source of the near infrared emission. (C) 2004 Elsevier B.V. All rights reserved.

飞秒激光脉冲照射诱导含芴结构树脂共聚物结构变化及机理的研究

在室温下用聚焦的飞秒激光照射高折射率、低双折射的透明含芴结构树脂-对苯二甲酸乙二醇酯(PET)共聚物，探索飞秒激光制备高分子光学功能微结构的可能性。通过紫外-可见吸收光谱、红外光谱、电子自旋共振谱、光学显微镜、扫描电镜及透射电镜等分析手段，对该材料在飞秒激光照射后的结构变化及机理进行研究。结果发现：含芴结构树脂共聚物在飞秒激光照射后产生化学键断裂，生成未成对电子，并形成无定形碳；照射区在可见光区域的吸收增强；随激光能量密度的减少在激光会聚点附近诱导结构由慧尾状向单一细丝转变。演示了三维着色内雕。

近红外超快强激光在LiF晶体内空间选择性诱导产生色心

通过显微镜聚焦近红外超快强激光作用在垂直于激光束移动的LiF晶体样品上，在LiF晶体中连续地诱导产生色心。以一定的间隔．反复移动该激光束的焦斑可在LiF晶体内空间选择性地诱导产生稳定的色心区。测定了不同条件下形成的色心区的吸收光谱，结果表明用近红外超快强激光可在LiF晶体中诱导产生具有激光效应的色心。

Micro Fabry-Perot interferometers in silica fibers machined by femtosecond laser

Micro Fabry-Perot (F-P) interferometers (MFPIs) are machined in a single-mode fiber (SMF) and a photonic crystal fiber (PCF) by using a near-infrared femtosecond laser, respectively. The strain and temperature characteristics of the two MFPIs with an identical cavity length are investigated and the experimental results show that the strain sensitivity of the PCF-based MFPI is smaller than that of the SMF-based MFPI due to their different waveguide structures, while the two MFPIs have close temperature sensitivities which are much smaller than that of an in-line SMF etalon sensor reported previously. These MFPIs in silica fibers are compact, stable, inexpensive, capable for mass-production and easy fabrication, offering great potentials for wide sensing applications. (c) 2007 Optical Society of America.

Ultrasensitive Detection of Infrared Photon Using Microcantilever: Theoretical Analysis

We present a new method for detecting near-infrared, mid-infrared, and far-infrared photons with an ultra-high sensitivity. The infrared photon detection was carried out by monitoring the displacement change of a vibrating microcantilever under light pressure using a laser Doppler vibrometer. Ultrathin silicon cantilevers with high sensitivity were produced using micro/nano-fabrication technology. The photon detection system was set up. The response of the microcantilever to the photon illumination is theoretically estimated, and a nanowatt resolution for the infrared photon detection is expected at room temperature with this method.

Formation of conducting layers on excimer-laser-irradiated polyimide film surfaces

Conducting layers on KrF excimer-laser-irradiated polyimide film surfaces were investigated by XPS, SEM and Fourier transform infrared (FTIR)-Raman spectroscopy, Analysis of polyimide residue after laser irradiation provided valuable insight into the nature of the formation of conducting layers. The subtle different between KrF laser irradiation and the pyrolysis of polyimide was found by comparison of the formation process of conducting layers. A physical picture was presented to describe better the formation of conducting layers. Under KrF laser irradiation, polyimide films underwent thermal decomposition assisted by photoinduced direct bond breaking. Polycrystalline graphite was subsequently formed as the product of the secondary addition reaction of carbon-enriched clusters, Such reaction was supported by the remaining energy on the irradiated polyimide film surface. This result shows that the thermal process played an important role that was not just restricted to the formation of conducting layers, Copyright (C) 2000 John Wiley & Sons, Ltd.

Research on the Temperature Field in Laser Hardening

Temperature field in the laser hardening process was numerically simulated by MSC.Marc software. The influence of energy density on laser hardening effect is analyzed. Simulation result is verified through the thermocouple temperature transducer measuring the specimen surface temperature under the laser irradiation. Experimental curves of temperature versus time are in agreement with simulation results. The simulation results can be regarded as a basis for choosing laser technological parameters.

Remark on Laser Bending Mechanisms

Laser bending mechanism is remarked, and its essence is the temperature gradient mechanism. The reverse bending and the thickened mechanisms are included in the temperature gradient mechanism because they are only different phenomena based on different thickness of the material. Experimental result shows that there is a kind of un-convention temperature distribution in the limit thickness specimen under laser irradiation. This phenomenon cannot be explained by the classical Fourier Law and is defined as Pan-Fourier effect in order to explain laser bending mechanism further.

Coulomb expansion of deuterated methane clusters irradiated by an ultrashort intense laser pulse

The simulations of three-dimensional particle dynamics show that when irradiated by an ultrashort intense laser pulse, the deuterated methane cluster expands and the majority of deuterons overrun the more slowly expanding carbon ions, resulting in the creation of two separated subclusters. The enhanced deuteron kinetic energy and a narrow peak around the energy maximum in the deuteron energy distribution make a considerable contribution to the efficiency of nuclear fusion compared with the case of homonuclear deuterium clusters. With the intense laser irradiation, the nuclear fusion yield increases with the increase of the cluster size, so that deuterated heteronuclear clusters with larger sizes are required to achieve a greater neutron yield.

Electron quantum path tuning and isolated attosecond pulse emission driven by a waveform-controlled multi-cycle laser field

We investigate high-order harmonic emission and isolated attosecond pulse (IAP) generation in atoms driven by a two-colour multi-cycle laser field consisting of an 800 nm pulse and an infrared laser pulse at an arbitrary wavelength. With moderate laser intensity, an IAP of similar to 220 as can be generated in helium atoms by using two-colour laser pulses of 35 fs/800 nm and 46 fs/1150 nm. The discussion based on the three-step semiclassical model, and time-frequency analysis shows a clear picture of the high-order harmonic generation in the waveform-controlled laser field which is of benefit to the generation of XUV IAP and attosecond electron pulses. When the propagation effect is included, the duration of the IAP can be shorter than 200 as, when the driving laser pulses are focused 1 mm before the gas medium with a length between 1.5 mm and 2 mm.