TWO-DIMENSIONAL ARRAY OF ION TRAPS ON A PLANAR CHIP

We investigate a planar ion chip design with a two-dimensional array of linear ion traps for the scalable quantum information processor. The segmented electrodes reside in a single plane on a substrate and a grounded metal plate, a combination of appropriate rf and DC potentials are applied to them for stable ion confinement, and the trap axes are located above the surface at a distance controlled by the electrodes' lateral extent and the substrate's height as discussed. The potential distributions are calculated using static electric field qualitatively. This architecture is conceptually simple and many current microfabrication techniques are feasible for the basic structure. It may provide a promising route for scalable quantum computers.

有限尺寸平行电极的边缘电场效应

电场分布是影响集成电光器件特性的主要因素。本丈研究了有限尺寸平行电极的电场分布，得到了其电荷分布密度、电容、电场强度的数学解析式，并分析了边缘电场效应，在此基础上得到了在集成电光器件中相邻光通道互不干扰所需的平行电极对的间隔距离。最后以单晶1×4光开关为例给出了当电极板长度为5mm、宽度为2mm、电极板间距为2mm时，离开电极板边缘3mm处的电场强度就已经降到电极板中心处的5％左右，引起的信道串扰约为0．25％，可忽略不计。

基于电光材料的光学相控阵技术研究进展

综述了基于电光材料的光学相控阵(OPA)的研究进展。介绍了光学相控阵技术的基本原理以及不同电光材料(铌酸锂电光晶体,AlGaAs光波导,液晶和掺镧锆钛酸铅(PLZT)电光陶瓷)光学相控阵技术的基本构想和涉及的关键技术;着重介绍近年来基于PLZT电光陶瓷材料光学相控阵技术的发展情况以及在这方面的最新研究成果,包括单级相控阵、级联相控阵、不同电极结构(表面电极和上下电极结构)相控阵技术等;最后简要介绍了光学相控阵技术在激光雷达等军事领域中的应用。

Nonlinear response and optical limiting in SrBi2Ta2O9 thin films

SrBi2Ta2O9 (SBT) thin films on quartz substrates were prepared by use of the pulsed-laser deposition technique. The nonlinear refractive indices, n(2), Of the SBT films were measured by use of z-scan techniques with picosecond pulses. Large negative nonlinear refractive indices of 3.84 and 3.58 cm(2)/GW were obtained for the wavelengths 532 nm and 1.064 mum, respectively. The two-photon absorption coefficient was determined to be 7.3 cm/GW for 532 nm. The limiting behavior of SBT thin film on a quartz substrate was investigated in an f/5 defocusing geometry by use of 38-ps-duration, 532-nm, 1.064-mum. laser excitation. (C) 2001 Optical Society of America.