233 resultados para LiNbO3 : Ce : Cu crystals
Resumo:
A discrete slip model which characterizes the inhomogeneity of material properties in ductile single crystals is proposed in this paper. Based on this model rate-dependent finite element investigations are carried out which consider the finite deformation, finite rotation, latent hardening effect and elastic anisotropy. The calculation clearly exhibits the process from microscopic inhomogeneous and localized deformation to necking and the formation of LSBS and reveals several important features of shear localization. For example, the inhomogeneous deformation is influenced by the imperfections and initial non-uniformities of material properties. The inhomogeneous deformation may either induce necking which results in the lattice rotation and leads to geometrical softening, which in turn promotes the formation of CSBS, or induces heavily localized deformation. The microscopic localized deformation eventually develops into the LSBS and results in a failure. These results are in close agreement with experiment. Our calculations also find that the slip lines on the specimen's surface at necking become curved and also find that if the necking occurs before the formation of LSBS, this band must be misoriented from the operative slip systems. In this case, the formation of LSBS must involve non-crystallographic effects. These can also be indirectly confirmed by experiment. All these suggest that our present discrete slip model offers a correct description of the inhomogeneous deformation characterization in ductile crystals.
Resumo:
利用纳米压入技术研究了Ce基大块非晶合金的变形行为,以及加载速率对塑性变形行为的影响规律.结果表明,Ce基大块非晶合金在纳米压入过程中表现出的变形行为与其他体系大块非晶有显著差别.Ce60Al15Cu10Ni15合金在低加载速率下为连续的塑性变形,在高加载速率下表现出显著的锯齿流变特征;而Ce65Al10Cu10Ni10Nb5合金,在所研究的加载速率范围内均为连续的塑性变形.但是,这两种合金都出现了室温蠕变现象.另外,探讨了Ce基大块非晶合金的反常塑性变形行为的产生机理.
Resumo:
通过提出一种新的守恒元和解元划分方式对二维时-空守恒元解元算法(CE/SE)进行了改进,推导了改进CE/SE算法的一、二阶精度计算格式,并给出了更高阶精度计算格式的构造方法。利用得到的改进CE/SE格式对激波反射问题、后台阶扰流问题及隔墙坑道传播问题进行了数值模拟。数值结果表明,对CE/SE算法的改进是成功的。改进CE/SE算法有诸多优点,值得在数值模拟中推广使用。
Resumo:
用分子动力学方法模拟了非晶Cu的形成过程,研究了非晶Cu力学性能的微观机理.用径向分布函数(RDF)和键对分析方法(PA),分析了快速冷却过程中系统内部结构的变化.非晶Cu径向分布函数第2个峰有明显的劈裂,键对分析表明,在快速降温过程中2331,2211和2101键对的增多是径向分布函数第2峰劈裂的原因.对非晶Cu进行拉伸、剪切加载模拟,结果表明,非晶Cu应力达到最大值之后,没有应力值的突降,宏观上出现类似塑性变形的行为.但是,非晶金属变形的微观机理不同于晶体.本文引入微观数密度统计分析,发现加载过程中微观密度呈现非均匀演化,这为理解宏观类似塑性行为的微观机理提供了线索和可能的分析方法.
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将CE/SE方法推广到二维固体流体弹塑性问题的数值计算,同时结合杂交粒子水平集方法追踪物质界面和合适的边界条件,提出一套完整的二维Euler型流体弹塑性计算方案.通过长钨杆侵彻装甲钢实验的数值模拟,对方法的精度和有效性进行验证.
Resumo:
Ammonothermal growth of GaN crystals with a retrograde solubility has been modeled and simulated here using fluid dynamics, thermodynamics and heat transfer models. The nutrient is considered as a porous media bed and the flow in the porous charge is simulated using the Darcy-Brinkman-Forchheimer model. The resulting governing equations are solved using the finite volume method. For the case of retrograde solubility, the charge is put above the baffle. The temperature difference between the dissolving zone and growth zone is found smaller than that applied on the sidewall of autoclave. The baffle opening has a strong effect on the nutrient transport and supersaturation of GaN species in the growth zone.
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The physical vapor transport (PVT) method is being widely used to grow large-size single SiC crystals. The growth process is associated with heat and mass transport in the growth chamber, chemical reactions among multiple species as well as phase change at the crystal/gas interface. The current paper aims at studying and verifying the transport mechanism and growth kinetics model by demonstrating the flow field and species concentration distribution in the growth system. We have developed a coupled model, which takes into account the mass transport and growth kinetics. Numerical simulation is carried out by employing an in-house developed software based on finite volume method. The results calculated are in good agreement with the experimental observation.
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Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.
Resumo:
<正>时-空守恒元解元方法(space-timeconservationelementandsolutionelementmethod,CE/SE)是近年来兴起的一种全新的守恒方程型方程计算方法。它最早由NASALewis研究中心的Chang于1995年提出来的。这种方法从根本上区别于传统的方法:它将时间和空间统一起来同等对待;利用守恒
Resumo:
时-空守恒元解元方法是近年来兴起的一种全新的高分辨率守恒方程型方程计算方法。它具有物理概念清晰,计算精度高和格式构造简单等优点,是一种具有广阔发展前景的计算流体力学方法。本文介绍了CE/SE方法的基本理论、格式构造、发展历史、应用情况和最新进展,并指出了应解决的问题和发展方向。
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本文以EDTA溶胶凝胶法合成K2NiF4型稀土复合氧化物La2Ni1-xMxO4(M=Cu,Fe),并对反应生成粉体分别进行SEM表征与XRD测试。结果表明,选取合适的制备工艺,可以形成La2Ni1-xMxO4(M=Cu,Fe)稀土复合氧化物材料;随着掺杂离子半径增大,生成材料晶格常数a增大同时,c减少,粉体颗粒粒径较大,同时少量杂相存在。
Resumo:
In this paper, a new definition of SE and CE, which is based on the hexahedron mesh and simpler than Chang's original CE/SE method (the space-time Conservation Element and Solution Element method), is proposed and an improved CE/SE scheme is constructed. Furthermore, the improved CE/SE scheme is extended in order to solve the elastic-plastic flow problems. The hybrid particle level set method is used for tracing the interfaces of materials. Proper boundary conditions are presented in interface tracking. Two high-velocity impact problems are simulated numerically and the computational results are carefully compared with the experimental data, as well as the results from other literature and LS-DYNA software. The comparisons show that the computational scheme developed currently is clear in physical concept, easy to be implemented and high accurate and efficient for the problems considered. (C) 2008 Elsevier Ltd. All rights reserved.