Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

Control of Large-size SiC Growth Process Using Modeling tool

Large size bulk silicon carbide (SiC) crystals are commonly grown by the physical vapor transport (PVT) method. The PVT growth of SiC crystals involves sublimation and condensation, chemical reactions, stoichiometry, mass transport, induced thermal stress, as well as defect and micropipes generation and propagation. The quality and polytype of as-grown SiC crystals are related to the temperature distribution inside the growth chamber during the growth process, it is critical to predict the temperature distribution from the measured temperatures outside the crucible by pyrometers. A radio-frequency induction-heating furnace was used for the growth of large-size SiC crystals by the PVT method in the present study. Modeling and simulation have been used to develop the SiC growth process and to improve the SiC crystal quality. Parameters such as the temperature measured at the top of crucible, temperature measured at the bottom of the crucible, and inert gas pressure are used to control the SiC growth process. By measuring the temperatures at the top and bottom of the crucible, the temperatures inside the crucible were predicted with the help of modeling tool. SiC crystals of 6H polytype were obtained and characterized by the Raman scattering spectroscopy and SEM, and crystals of few millimeter size grown inside the crucible were found without micropipes. Expansion of the crystals were also performed with the help of modeling and simulation.

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.

Evolution of structural defects in SiOx films fabricated by electron cyclotron resonance plasma chemical vapour deposition upon annealing treatment

We study the structural defects in the SiOx film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples. [-SiO3](2-) defects are the luminescence centres of the ultraviolet photoluminescence (PL) from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3](2-) is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000 degrees C annealing, [-SiO3](2-) defects still exist in the films.

Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma

This paper reports on the preparation and characterization of hydrogenated amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma. Carbon-rich a-SiC:H film with band gap of up to 3.3 eV has been achieved. IR and UV Vis spectra were employed to characterize the chemical bonding and optical properties of as-prepared films. It is shown that hydrogen dilution is crucial in obtaining these wide band gap carbon-rich films. Raman and PL measurements were performed to probe the microstructure and photoelectronic properties of these films before and after annealing. Films with intermediate carbon concentration seem more defective and exhibit stronger photoluminescence and subband absorption than others. Films with different compositions exhibit different annealing behaviours. For silicon rich and carbon rich films, high temperature annealing results in the formation of silicon crystallites and graphite clusters, respectively. (C) 2003 Elsevier B.V. All rights reserved.

Recent advances in synthesis and properties of cubic boron nitride films

Cubic boron nitride (c-BN) attracts widespread interest as a promising material for many potential applications because of its unique physical and chemical properties. Since the 1980's the research in c-BN thin films has been carried out, which reached its summit in the mid of 1990's, then turned into a downward period. In the past few years, however, important progress was achieved in synthesis and properties of cubic boron nitride films, such as obtaining > 1 mu m thick c-BN films, epitaxial growth of single crystalline c-BN films, and advances in mechanics properties and microstructures of the interlayer of c-BN films. The present article reviews the current status of the synthesis and properties of c-BN thin films.

Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

We have studied the growth of GaInNAs by a plasma-assisted molecular-beam epitaxy (MBE). It was found that the N-radicals were incorporated into the epitaxial layer like dopant atoms. In the range of 400-500 degrees C, the growth temperature (T-g) mainly affected the crystal quality of GaInNAs rather than the N concentration. The N concentration dropped rapidly when T-g exceeded 500 degrees C. Considering N desorption alone is insufficient to account for the strong falloff of the N concentration with T-g over 500 degrees C, the effect of thermally-activated N surface segregation must be taken into account. The N concentration was independent of the arsenic pressure and the In concentration in GaInNAs layers, but inversely proportional to the growth rate. Based on the experimental results, a kinetic model including N desorption and surface segregation was developed to analyze quantitatively the N incorporation in MBE growth. (C) 2000 American Institute of Physics. [S0003-6951(00)00928-1].

Modeling Study on the Characteristics of Laminar and Turbulent Argon Plasma Jets Impinging Normally upon a Flat Plate in Ambient Air

Modeling study is performed to compare the flow and heat transfer characteristics of laminar and turbulent argon thermal-plasma jets impinging normally upon a flat plate in ambient air. The combined-diffusion-coefficient method and the turbulence-enhanced combined-diffusion-coefficient method are employed to treat the diffusion of argon in the argon-air mixture for the laminar and the turbulent cases, respectively. Modeling results presented include the flow, temperature and argon concentration fields, the air mass flow-rates entrained into the impinging plasma jets, and the distributions of the heat flux density on the plate surface. It is found that the formation of a radial wall jet on the plate surface appreciably enhances the mass flow rate of the ambient air entrained into the laminar or turbulent plasma impinging-jet. When the plate standoff distance is comparatively small, there exists a significant difference between the laminar and turbulent plasma impinging-jets in their flow fields due to the occurrence of a large closed recirculation vortex in the turbulent plasma impinging-jet, and no appreciable difference is found between the two types of jets in their maximum values and distributions of the heat flux density at the plate surface. At larger plate standoff distances, the effect of the plate on the jet flow fields only appears in the region near the plate, and the axial decaying-rates of the plasma temperature, axial velocity and argon mass fraction along the axis of the laminar plasma impinging-jet become appreciably less than their turbulent counterparts.

Three-Dimensional Modeling of Heat Transfer and Fluid Flow in Laminar-Plasma Material Re-Melting Processing

Modeling study is performed concerning the heat transfer and fluid flow for a laminar argon plasma jet impinging normally upon a flat workpiece exposed to the ambient air. The diffusion of the air into the plasma jet is handled by using the combined-diffusion-coefficient approach. The heat flux density and jet shear stress distributions at the workpiece surface obtained from the plasma jet modeling are then used to study the re-melting process of a carbon steel workpiece. Besides the heat conduction within the workpiece, the effects of the plasma-jet inlet parameters (temperature and velocity), workpiece moving speed, Marangoni convection, natural convection etc. on the re-melting process are considered. The modeling results demonstrate that the shapes and sizes of the molten pool in the workpiece are influenced appreciably by the plasma-jet inlet parameters, workpiece moving speed and Marangoni convection. The jet shear stress manifests its effect at higher plasma-jet inlet velocities, while the natural convection effect can be ignored. The modeling results of the molten pool sizes agree reasonably with available experimental data.

Modeling Study on the Entrainment of Ambient Air into Subsonic Laminar and Turbulent Argon Plasma Jets

Modeling study is performed to reveal the special features of the entrainment of ambient air into subsonic laminar and turbulent argon plasma jets. Two different types of jet flows are considered, i.e., the argon plasma jet is impinging normally upon a flat substrate located in atmospheric air surroundings or is freely issuing into the ambient air. It is found that the existence of the substrate not only changes the plasma temperature, velocity and species concentration distributions in the near-substrate region, but also significantly enhances the mass flow rate of the ambient air entrained into the jet due to the additional contribution to the gas entrainment of the wall jet formed along the substrate surface. The fraction of the additional entrainment of the wall jet in the total entrained-air flow rate is especially high for the laminar impinging plasma jet and for the case with shorter substrate standoff distances. Similarly to the case of cold-gas free jets, the maximum mass flow-rate of ambient gas entrained into the turbulent impinging or free plasma jet is approximately directly proportional to the mass flow rate at the jet inlet. The maximum mass flow-rate of ambient gas entrained into the laminar impinging plasma jet slightly increases with increasing jet-inlet velocity but decreases with increasing jet-inlet temperature.

(Ti,Al)N Film On Normalized T8 Carbon Tool Steel Prepared By Pulsed High Energy Density Plasma Technique

Under optimized operating parameters, a hard and wear resistant ( Ti,Al)N film is prepared on a normalized T8 carbon tool steel substrate by using pulsed high energy density plasma technique. Microstructure and composition of the film are analysed by x-ray diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy and scanning electron microscopy. Hardness profile and tribological properties of the film are tested with nano-indenter and ring-on-ring wear tester, respectively. The tested results show that the microstructure of the film is dense and uniform and is mainly composed of ( Ti,Al)N and AlN hard phases. A wide transition interface exists between the film and the normalized T8 carbon tool steel substrate. Thickness of the film is about 1000 nm and mean hardness value of the film is about 26GPa. Under dry sliding wear test conditions, relative wear resistance of the ( Ti,Al)N film is approximately 9 times higher than that of the hardened T8 carbon tool steel reference sample. Meanwhile, the ( Ti,Al)N film has low and stable friction coefficient compared with the hardened T8 carbon tool steel reference sample.

Semi-gas kinetics model for performance modeling of flowing chemical oxygen-iodine lasers (COIL)

A semi-gas kinetics (SGK) model for performance analyses of flowing chemical oxygen-iodine laser (COIL) is presented. In this model, the oxygen-iodine reaction gas flow is treated as a continuous medium, and the effect of thermal motions of particles of different laser energy levels on the performances of the COIL is included and the velocity distribution function equations are solved by using the double-parameter perturbational method. For a premixed flow, effects of different chemical reaction systems, different gain saturation models and temperature, pressure, yield of excited oxygen, iodine concentration and frequency-shift on the performances of the COIL are computed, and the calculated output power agrees well with the experimental data. The results indicate that the power extraction of the SGK model considering 21 reactions is close to those when only the reversible pumping reaction is considered, while different gain saturation models and adjustable parameters greatly affect the output power, the optimal threshold gain range, and the length of power extraction.