Large-eddy simulation of turbulent collision of heavy particles in isotropic turbulence

The small-scale motions relevant to the collision of heavy particles represent a general challenge to the conventional large-eddy simulation (LES) of turbulent particle-laden flows. As a first step toward addressing this challenge, we examine the capability of the LES method with an eddy viscosity subgrid scale (SGS) model to predict the collision-related statistics such as the particle radial distribution function at contact, the radial relative velocity at contact, and the collision rate for a wide range of particle Stokes numbers. Data from direct numerical simulation (DNS) are used as a benchmark to evaluate the LES using both a priori and a posteriori tests. It is shown that, without the SGS motions, LES cannot accurately predict the particle-pair statistics for heavy particles with small and intermediate Stokes numbers, and a large relative error in collision rate up to 60% may arise when the particle Stokes number is near St_K=0.5. The errors from the filtering operation and the SGS model are evaluated separately using the filtered-DNS (FDNS) and LES flow fields. The errors increase with the filter width and have nonmonotonic variations with the particle Stokes numbers. It is concluded that the error due to filtering dominates the overall error in LES for most particle Stokes numbers. It is found that the overall collision rate can be reasonably predicted by both FDNS and LES for St_K>3. Our analysis suggests that, for St_K<3, a particle SGS model must include the effects of SGS motions on the turbulent collision of heavy particles. The spectral analysis of the concentration fields of the particles with different Stokes numbers further demonstrates the important effects of the small-scale motions on the preferential concentration of the particles with small Stokes numbers.

Numerical analysis and comparison of three metal-oxide-type super-resolution near field structures

Based on the Fresnel-Kirchkoff diffraction theory, we build up a Gaussian diffraction model of metal-oxide-type super-resolution near field structure (super-RENS), which can describe far field optical properties. The spectral contrast induced by refractive index and the structural changes in AgOx, PtOx and PdOx thin films, which are the key functional layers in super-RENS, are studied by using this model. Comparison results indicate that the spectral contrast intensively on laser-induced distribution and change of the refractive index in the metal-oxide films. The readout mechanism of the metal-oxide-type super-RENS optical disc is further clarified. This Gaussian diffraction model can be used as a simple and effective method for choosing proper active materials in super-RENS.

Distribution of IgM, IgD and IgZ in mandarin fish, Siniperca chuatsi lymphoid tissues and their transcriptional changes after Flavobacterium columnare stimulation

The gene sequences of three different immunoglobulin (Ig) heavy chains, namely IgM, IgD and IgZ, were cloned from mandarin fish (Siniperca chuatsi) recently. In this study the distribution of these three kinds of Ig-producing cells in lymphoid-related tissues as head kidney, spleen, gill and intestine were investigated by using in situ hybridization, and their transcriptional changes were also analyzed by quantitative real-time PCR during 8 weeks after immunization. IgM-producing cells could be detected obviously and abundantly in all the tissues examined. A few numbers of IgD and IgZ positive cells were both detected in head kidney and spleen. IgZ positive cells could be detected in gill moderately while IgD showed negative results, otherwise no IgD or IgZ positive cells could be detected in intestine. After stimulated with bacterial pathogen Flavobacterium columnare G(4), the transcripts of these three Ig genes exhibited quite different kinetics. Significantly increased transcription of IgM gene was observed in almost all the tissues examined especially in boosted group. In contrast with IgM, seldom strong increase was examined for IgD and IgZ genes. For IgD, it seemed that the first injection could stimulate the immune response easier, since in almost all the tissues significant increase was detected at 1 or 2 weeks after injection. For IgZ, boosted injection could not enlarge the up-regulation of gene expression of first injection. This is the first case to report the transcriptional kinetics of three Ig genes in teleost after bacterin immunization. (C) 2008 Elsevier B.V. All rights reserved.

Efficiency of constructed wetlands in decontamination of water polluted by heavy metals

A twin-shaped constructed wetland (CW) comprising a vertical flow (inflow) chamber with Cyperus alternifolius followed by a reverse-vertical flow (outflow) chamber with Villarsia exaltata was assessed for decontamination of artificial wastewater polluted by heavy metals. After application of Cd, Cu, Pb, Zn over 150 days, together with Al and Mn during the final 114 days, no heavy metals with the exception of Mn could be detected in either the drainage zone at the bottom, shared by both chambers, or in the effluent. The inflow chamber was, therefore, seen to be predominantly responsible for the decontamination process of more toxic metal species with final concentrations far below WHO drinking-water standards. About one-third of the applied Cu and Mn was absorbed, predominantly by lateral roots of C. alternifolius. Lower accumulation levels were observed for Zn (5%), Cd (6%), Al (13%). and Pb (14%). Contents of Cd, Cu, Mn, and Zn in soil were highest in top layer, while Al and Pb were evenly distributed through the whole soil column. Metal species accumulating mainly in the top layer can be removed mechanically. A vertical flow CW with C. alternifolius is an effective tool in phytoremediation for treatment of water polluted with heavy metals. (C) 2002 Elsevier Science B.V. All rights reserved.

Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition

Tensile-strained GaAsP/GaInP single quantum well (QW) laser diode (I-D) structures have been grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) and related photoluminescence (PL) properties have been investigated in detail. The samples have the same well thickness of 16 nm but different P compositions in a GaAsP QW. Two peaks in room temperature (RT) PL spectra are observed for samples with a composition larger than 0.10. Temperature and excitation-power-dependent PL spectra have been measured for a sample with it P composition of 0.15. It is found that the two peaks have a 35 meV energy separation independent of temperature and only the low-energy peak exists below 85 K. Additionally, both peak intensities exhibit a monotonous increase as excitation power increases. Analyses indicate that the two peaks arise from the intrinsic-exciton recombination mechanisms of electron-heavy hole (e-hh) and electron-light hole (e-hh). A theoretical calculation based oil model-solid theory, taking, into account the spin-orbit splitting energy, shows good agreement with our experimental results. The temperature dependence of PL intensity ratio is well explained using the spontaneous emission theory for e-hh and e-hh transitions. front which the ratio can be characterized mainly by the energy separation between the fill and Ill states.

Photoelectric characteristics of metal/InGaN/GaN heterojunction structure

A heterojunction structure photodetector was fabricated by evaporating a semitransparent Ni/Au metal film oil the InGaN/GaN structure. The photocurrent (PC) spectra show that both the Schottky junction (NiAu/InGaN) and the InGaN/GaN isotype heterojunction contribute to the PC signal which suggests that two junctions are connected in series and result in a broader spectral response of the device. Secondary electron, cathodoluminescence and electron-beam-induced current images measured from the same area of the edge surface clearly reveal the profile of the layer structure and distribution of the built-in electric field around the two junctions. A band diagram of the device is drawn based oil the consideration of the polarization effect at the InGaN/GaN interface. The analysis is consistent with the physical mechanism of a tandem structure of two junctions connected in series.

Mode Analysis for Equilateral-Triangle-Resonator Microlasers with Metal Confinement Layers

Mode characteristics are analyzed for electrically injected equilateral-triangle-resonator (ETR) semiconductor microlasers, which are laterally confined by insulating barrier SiO2 and electrode metals Ti-Au. For the ETR without metal layers, the totally confined mode field patterns are derived based on the reflection phase shifts, and the Q-factors are calculated from the far-field emission of the analytical near field distribution, which are agreement very well with the numerical results of the finite-difference time-domain (FDTD) simulation. The polarization dependence reflections for light rays incident on semiconductor-SiO2 -Ti-Au multi-layer structures are accounted in considering the confinement of TE and TM modes in the ETR with the metal layers. The reflectivity will greatly reduce with a Ti layer between SiO2 and Au for light rays with incident angle less than 30 especially for the TE mode, even the thickness of the Ti layer is only 10 nm. If the ETR is laterally confined by SiO2-Au layers without the Ti layer, the Fabry-Perot type modes with an incident angle of zero on one side of the ETR can also have high Q-factor. The FDTD simulation for the ETR confined by metal layers verifies the above analysis based on multi-layer reflections. The output spectra with mode intervals of whispering-gallery modes and Fabry-Perot type modes are observed from different ETR lasers with side length of 10 m, respectively.

Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition

The GaN-rich side of GaNP ternary alloys has been successfully synthesized by light-radiation heating and low-pressure metal-organic chemical vapor deposition. X-ray diffraction (XRD) rocking curves show that the ( 0002) peak of GaNP shifts to a smaller angle with increasing P content. From the GaNP photoluminescence (PL) spectra, the red shifts from the band-edge emission of GaN are determined to be 73, 78 and 100 meV, respectively, in the GaNP alloys with the P contents of 1.5%, 5.5% and 7.5%. No PL peak or XRD peak related to GaP is observed, indicating that phase separation induced by the short-range distribution of GaP-rich regions in the GaNP layer has been effectively suppressed. The phase-separation suppression in the GaNP layer is associated with the high growth rate and the quick cooling rate under the given growth conditions, which can efficiently restrain the accumulation of P atoms in the GaNP layer.

Effect of heavy boron doping on the electrical characteristics of SiGeHBTs

A modified version of the Jain-Roulston (J-R) model is developed that takes into account the compensation effect of B to Ge in strained SiGe layers for the first time. Based on this new model, the distribution of the bandgap narrowing (BGN) between the conduction and valence bands is calculated. The influence of this distribution on the transport characteristics of abrupt SiGe heterojunction bipolar transistors (HBTs) has been further considered by using the tunnelling and thermionic emission mechanisms instead of the drift and diffusion mechanisms at the interfaces where discontinuities in energy levels appear. The results show that our modified J-R model better fits the experimental values, and the energy band structure has a strong influence on electrical characteristics.

Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition

The A1 compositional distribution of A1GaN is investigated by cathodoluminescence (CL). Monochromatic CL images and CL spectra reveal a lateral A1 compositional inhomogeneity, which corresponds to surface hexagonal patterns. Cross-sectional CL images show a relatively uniform Al compositional distribution in the growth direction, indicating columnar growth mode of A1GaN films. In addition, a thin A1GaN layer with lower Al composition is grown on top of the buffer A1N layer near the bottom of the A1GaN epilayer because of the larger lateral mobility of Ga adatoms on the growth surface and their accumulation at the grain boundaries.

Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD

Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100) substrates by using metal-organic chemical vapour deposition (MOCVD). An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs (100) substrates. This trend is explained by taking into account the presence of multiatomic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs(100) substrates are also studied by photoluminescence (PL). It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.

GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition

GaN1-xPx ternary alloys with high P compositions were deposited on sapphire substrates by means of metal-organic chemical vapor deposition. Depth profiles of the elements indicate that the maximum P/N composition ratio is about 17% and a uniform distribution of the P atoms in the alloys is achieved. 2theta/omega XRD spectra demonstrate that the (0002) peak of the GaN1-xPx alloys shifts to smaller angle with increasing P composition. From the photoluminescence (PL) spectra, the red shifts to the bandedge emission of GaN are determined to be 73, 78, 100 and 87 meV for the GaN1-xPx alloys with the P/N composition ratios of 3%, 11%, 15% and 17%, respectively. No PL peak related to GaP is observed, indicating that the phase separation between GaN and GaP is well suppressed in our GaN1-xPx samples. (C) 2003 Elsevier Science B.V. All rights reserved.

A STUDY OF THE COMPOSITION DISTRIBUTION AT THE TI/AL2O3 INTERFACE USING THE MCS(+)-SIMS TECHNIQUE

In this article, the MCs(+)-SIMS technique has been used to characterize Ti/Al2O3 metal/insulator interfaces. Our experiment shows that by detecting MCs(+) secondary ions, the matrix and interface effects are reduced, and good depth profiles have been obtained. The experimental result also shows that with the increase of the annealing temperature (RT, 300 degrees C, 600 degrees C, 850 degrees C), the interface gets broadened gradually, indicating diffusion and reaction take place at the interface, and the interface reaction is enhanced with the increase in annealing temperature. When the temperature increases, the AlCs+ signal forms two plateaus in the Ti layer, indicating Al from the decomposition of Al2O3 diffuses into the Ti layer and exists as two new forms (phases). Also, with the increase of the annealing temperature, oxygen diffuses into the Ti layer gradually, and makes the O signal in the Ti layer increase significantly in the 850 degrees C annealed sample.