Study on the Single Crystals of Poly(3-octylthiophene) Induced by Solvent-Vapor Annealing

Needle-like single crystals of poly(3-octylthiophene) (P3OT) have been prepared by tetrahydrofuran-vapor annealing. The morphology and structure of the crystals were characterized with optical microscopy, scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and wide-angle X-ray diffraction. It is observed that the P3OT molecules are packed with the backbones parallel to the length axis of the crystal and the alkyl side chains perpendicular to the substrate. The field effect transistor based on the P3OT single crystal exhibited a charge carrier mobility of 1.54 x 10(-4) cm(2)/(Vs) and on/off current ratio of 37, and the molecular orientation of the crystal is ascribed to account for the device performance. The time-dependent morphological evolution demonstrated that the crystals underwent Ostwald ripening when annealed.

Organic photovoltaic cells using hexadecafluorophthalocyaninatocopper (F16CuPc) as electron acceptor material

We fabricated organic photovoltaic cells by using hexadecafluorophthalocyaninatocopper (F16CuPc) as electron acceptor material and para-sexiphenyl (p-6P) as electron donor material. F16CuPc has wide absorption spectrum from 550 nm to 850 nm, which covers the maximum of solar photo flux. The measurement of their external quantum efficiency (EQE) demonstrated that the photocurrent comes from the excitons created in F16CuPc, which were separated into free electrons and holes at heterojunction interface of p-6P and F16CuPc. Moreover, F(16)FuPc with excellent air-stability improved the environmental stability of photovoltaic cells, and the unencapsulated cells exhibited the shelf lifetime of exceeding a week.

Thickness dependence of mobility in CuPc thin film on amorphous SiO2 substrate

Hole mobility in a copper-phthalocyanine (CuPc)-based top-contact transistor has been studied with various organic layer thicknesses. It is found that the transistor performance depends on the thickness of the CuPc layer, and the mobility increases with the increase in the CuPc layer and saturated at the thickness of 6 ML. The upper layers do not actively contribute to the carrier transport in the organic films. The morphology of the organic layer grown on the bare SiO2/Si substrate is also presented. The analysis of spatial correlations shows that the CuPc films grow on the SiO2 according to the mixed-layer mode.

Naphthyl end-capped quarterthiophene: A simple organic semiconductor with high mobility and air stability

An organic semiconductor that can be mass produced is synthesized by end-capping quaterthiophene with naphthyl units (NaT4). An organic thin-film transistor (OTFT, see figure) has been fabricated using this organic semiconductor, and exhibits stability under ambient conditions with a mobility of up to 0.40 cm(2) V-1 s(-1).

Ambipolar organic field-effect transistors with air stability, high mobility, and balanced transport

Ambipolar organic field-effect transistors (OFETs) based on the organic heterojunction of copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were fabricated. The ambipolar OFETs eliminated the injection barrier for the electrons and holes though symmetrical Au source and drain electrodes were used, and exhibited air stability and balanced ambipolar transport behavior. High field-effect mobilities of 0.04 cm(2)/V s for the holes and 0.036 cm(2)/V s for the electrons were obtained. The capacitance-voltage characteristic of metal-oxide-semiconductor (MOS) diode confirmed that electrons and holes are transported at F16CuPc and BP2T layers, respectively. On this ground, complementary MOS-like inverters comprising two identical ambipolar OFETs were constructed.

Charge carrier mobility and electroluminescence in a green-emitting alternating block copolymer with a methoxy Bi-substituted chromophore

We determine the mobility of positive and negative charge carriers in a soluble green-emitting alternating block copolymer with, a methoxy bi-subsbituted conjugated segment. The negative charge carrier mobility of 6 x 10(-11) cm(2)/V.s is directly determined using space-charge-limited current analytical expressions. Positive charge carrier transport is also space-charge-limited, with a mobility of I x 10(-8) cm(2)/V.s. The electron trap distribution is exponential, with a characteristic energy of similar to 0.12 eV. A hole trap with energy similar to 0.4 eV was observed. This copolymer is used as emissive material in organic light-emitting diodes that present brightness of similar to 900 cd/m(2) at 12.5 V.

Electron Beam Surface Treatment. Part I: Surface Hardening of AISI D3 Tool Steel

The effects of electron beam surface hardening treatment on the microstructure and hardness of AISI D3 tool steel have been investigated in this paper. The results showed that the microstructure of the hardened layer consisted of martensite, a dispersion

Two-dimensional simulation of an electron cyclotron resonance plasma source with self-consistent power deposition

Using a refined two-dimensional hybrid-model with self-consistent microwave absorption, we have investigated the change of plasma parameters such as plasma density and ionization rate with the operating conditions. The dependence of the ion current density and ion energy and angle distribution function at the substrate surface vs. the radial position, pressure and microwave power were discussed. Results of our simulation can be compared qualitatively with many experimental measurements.

Shock Tube Studies on Recombination Kinetics of Sodium Ion with Electron

The ionization kinetics of sodium diluted in argon is studied in a shock tube, in which the test gas mixture is ionized by a reflected shock wave and subsequently quenched by a strong rarefaction wave. A Langmuir electrostatic probe is used to monitor the variation of the ion number density at the reflection shock wave region. The working state of the probe is in the near fi-ee fall region and a correction for reduction of the probe current due to elastic scattering in the probe sheath is introduced. At the temperature range of 800 to 2600 K and in the ambience of argon gas, the three-body recombination rate coefficient of the sodium ion with electron is determined: 3.43 x 10(-14)T(-3.77) cm(6).s(-1).

Electron Beam Surface Remelting of AISI D2 Cold-Worked Die Steel

Electron beam surface remelting has been carried out on AISI D2 cold-worked die steel. The microstructure and hardening behavior of the electron beam surface remelted AISI D2 cold-worked die steel have been studied by means of optical microscopy and Vickers hardness testing. It was found that AISI D2 steel can be successfully surface hardened by electron beam surface remelting. This surface hardening effect can be attributed to microstructural refinement following electron beam surface remelting. (C) 2002 Elsevier Science B.V. All rights reserved.

Shock Tube Studies on the Nonequlibrium Electron Affinity Kinetics of Fluorine Atom at High Temperatures

To study electron affinity kinetics, a shock tube method was applied, in which the test gas was ionized by a reflected shock wave and subsequently quenched by a strong rarefaction wave. As the quenching speed of 106 K/s was reached, a nonequilibrium ionization-recombination process occurred, which was dominated by ion recombination with electrons. A Langmuir electrostatic probe was used to monitor variation in the ion number density at the reflection shock region. The working state of the probe was analyzed...

Electron Beam Surface Treatment. Part II: Microstructure Evolution of Stainless Steel and Aluminum Alloy During Electron Beam Rapid Solidification

Surface rapid solidification microstructures of AISI 321 austenitic stainless steel and 2024 aluminum alloy have been investigated by electron beam remelting process and optical microscopy observation. It is indicated that the morphologies of the melted layer of both stainless steel and aluminum alloy change dramatically compared to the original materials. Also, the microstructures were greatly refined after the electron beam irradiation.

Md Simulation Of Dislocation Mobility During Cutting With Diamond Tip On Silicon

By means of Tersoff and Morse potentials, a three-dimensional molecular dynamics simulation is performed to study atomic force microscopy cutting on silicon monocrystal surface. The interatomic forces between the workpiece and the pin tool and the atoms of workpiece themselves are simulated. Two partial edge dislocations are introduced into workpiece Si, it is found that the motion of dislocations does not occur during the atomic force microscopy cutting processing. Simulation results show that the shear stress acting on dislocations is far below the yield strength of Si. (c) 2008 Elsevier Ltd. All rights reserved.

Thickness And Component Distributions Of Yttrium-Titanium Alloy Films In Electron-Beam Physical Vapor Deposition

Thickness and component distributions of large-area thin films are an issue of international concern in the field of material processing. The present work employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal resonators, deposited film thickness distribution measured by Rutherford backscattering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.