Fabrication of Novel Superhydrophobic Surfaces and Water Droplet Bouncing Behavior - Part 1: Stable ZnO-PDMS Superhydrophobic Surface with Low Hysteresis Constructed Using ZnO Nanoparticles

A superhydrophobic surface has many advantages in micro/nanomechanical applications, such as low adhesion, low friction and high restitution coefficient, etc. In this paper, we introduce a novel and simple route to fabricate superhydrophobic surfaces using ZnO nanocrystals. First, tetrapod-like ZnO nanocrystals were prepared via a one-step, direct chemical vapor deposition (CVD) approach. The nanostructured ZnO material was characterized by scanning electron microscope (SEM) and X-ray diffraction (XRD) and the surface functionalized by aminopropyltriethoxysilane (APS) was found to be hydrophobic. Then the superhydrophobic surface was constructed by depositing uniformly ZnO hydrophobic nanoparticles (HNPs) on the Poly(dimethylsiloxane) (PDMS) film substrate. Water wettability study revealed a contact angle of 155.4 +/- 2 degrees for the superhydrophobic surface while about 110 degrees for pure smooth PDMS films. The hysteresis was quite low, only 3.1 +/- 0.3 degrees. Microscopic observations showed that the surface was covered by micro- and nano-scale ZnO particles. Compared to other approaches, this method is rather convenient and can be used to obtain a large area superhydrophobic surface. The high contact angle and low hysteresis could be attributed to the micro/nano structures of ZnO material; besides, the superhydrophobic property of the as-constructed ZnO-PDMS surface could be maintained for at least 6 months. (C) Koninklijke Brill NV, Leiden, 2010

Theoretical foundation of Zisman's empirical equation for wetting of liquids on solid surfaces

Theories of wetting of liquids on solid surfaces under the condition that van der Waals force is dominant are briefly reviewed. We show theoretically that Zisman's empirical equation for wetting of liquids on solid surfaces is a linear approximation of the Young-van der Waals equation in the wetting region, and we express the two parameters in Zisman's empirical equation in terms of the dielectric polarizabilities of the solid and liquids. The materials contained in this paper are suitable for physics teaching of wetting phenomena for undergraduate, graduate, general physicist, etc.

Plasma and electrode emissions from a 1 kW hydrogen-nitrogen arcjet thruster

Arc root behavior affects the energy transfer and nozzle erosion in an arcjet thruster. To investigate the development of arc root attachment in 1 kW class N2 and H2-N2 arcjet thrusters from the time of ignition to the stably working condition, a kinetic series of end-on view images of the nozzle obtained by a high-speed video camera was analyzed. The addition of hydrogen leads to higher arc voltage levels and the determining factor for the mode of arc root attachment was found to be the nozzle temperature. At lower nozzle temperatures, constricted type attachment with unstable motions of the arc root was observed, while a fully diffused and stable arc root was observed at elevated nozzle temperatures.

Near infrared lights emission of Ar-40(16+) impacting on metal surfaces

The highly charged ion Ar-40(16+) with the velocity (kinetic energy E (K)=150 keV, velocity V=8.5x10(5) m/s) smaller than Bohr velocity (V (Bohr)=2.9x10(6) m/s) was found to hove impacts on the surfaces of metals Ni, Mo, Au and Al, and the Ar atomic infrared light lines and X-rays spectra were simultaneously measured. The experimental results show that the highly charged ion that captures electrons is neutralized, and the multiply-excited hollow atom forms. The hollow atom cascade decay radiates lights from infrared to X-ray spectrum. The intensity of infrared lights shows that the metallic work functions play an important role in the neutralization process of highly charged ions during their interaction with metallic surfaces, which verifies the classical over-the-barrier model.

Slow highly charged ion O4+ induced electron emission from clean solid surfaces

The. total electron emission yields following the interaction of slow highly charged ions (SHCI) O4+ with different material surfaces (W, Au, Si and SiO2) have been measured. It is found that the electron emission yield gamma increases proportionally with the projectile velocity v ranging from 5.36 x 10(5)m/s to 10.7 x 10(5)m/s. The total emission yield is dependent on the target materials, and it turns out to follow the relationship gamma(Au) > gamma(Si)> gamma(W). The result shows that the electron emission yields are mainly determined by the electron stopping power of the target when the projectile potential energy is taken as a constant, which is in good agreement with the former studies

Slow highly charged ions induced electron emission from clean Si surfaces

The electron emission yields from the interaction of slow highly charged ions (SHCI) He2+, O2+ and Ne2+ with clean Si surface are measured separately. It is found that electron emission yield gamma increases proportionally to projectile kinetic energy E-p/M-p, ranging from 0.75 keV/u to 10.5 keV/u (i.e. 3.8 x 10(5) m/s <= v(p) <= 1.42 x 10(6) m/s), and it is higher for heavy ions (O2+ and Ne2+) than for light ion (He2+). For O2+ and Ne2+, gamma increases with Z(p) decreasing in our energy range, and it shows quite different from the result for higher projectile kinetic energy. After calculating the stopping power by using TRIM 2006, it is found that the fraction of secondary electrons induced by recoil atoms increases significantly at lower projectile energy, thereby leads to the differences in gamma for heavy ions O2+ and Ne2+ between lower and higher projectile kinetic energy.

反冲原子对低速离子轰击Si表面时电子发射产额的影响；Slow highly charged ions induced electron emission from clean Si surfaces

在兰州重离子加速器国家实验室电子回旋共振离子源高电荷态原子物理实验平台上,用低能(0.75keV/u≤EP/MP≤10.5keV/u,即3.8×105m/s≤vP≤1.42×106m/s)He2+,O2+和Ne2+离子束正入射到自清洁Si表面时二次电子发射产额的实验结果.结果表明电子发射产额γ近似正比于入射离子动能EP/MP.在相同动能下,γ(O)>γ(Ne)>γ(He),对于原子序数ZP比较大的O2+和Ne2+离子,ZP大者反而γ小,这与较高入射能量时的结果截然不同.通过计算不同入射能量下入射离子的阻止能损S,发现反冲原子对激发二次电子的作用随入射离子能量的降低显著增大,这正是导致在较低能量范围内二次电子发射产额与较高入射能量时存在差异的主要原因.