Dynamic dc voltage band observed within each current branch in the transition from static to dynamic electric-field domain formation in a doped GaAs/AlAs superlattice

A dynamic dc voltage band was found emerging from each sawtooth-like branch of the current-voltage characteristics of a doped GaAs/AlAs superlattice in the transition process from static to dynamic electric-field domain formation caused by increasing the sample temperature. As the temperature increases, these dynamic dc voltage bands expand within each sawtooth-like branch, squeeze out the static regions, and join up together to turn the whole plateau into dynamic electric-field domain formation. These results are well explained by a general analysis of stability of the sequential tunneling current in superlattices. (C) 1999 American Institute of Physics. [S0003-6951(99)04443-5].

Intraband absorption in the 8-12 mu m band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Normal-incident infrared absorption in the 8-12-mu m-atmospheric spectral window in the InGaAs/GaAs quantum-dot superlattice is observed. Using cross-sectional transmission electron microscopy, we find that the InGaAs quantum dots are perfectly vertically aligned in the growth direction (100). Under the normal incident radiation, a distinct absorption peaked at 9.9 mu m is observed. This work indicates the potential of this quantum-dot superlattice structure for use as normal-incident infrared imaging focal arrays application without fabricating grating structures. (C) 1998 American Institute of Physics. [S0003-6951(98)01151-6].

Electronic structures of InAs self-assembled quantum dots in an axial magnetic field

The electronic structure of an InAs self-assembled quantum dot in the presence of a perpendicular magnetic field is investigated theoretically. The effect of finite offset, valence-band mixing, and strain are taken into account. The hole levels show strong anticrossings. The large strain and strong magnetic field decrease the effect of mixing between heavy hole and light hole. The hole energy levels have in general a weaker field dependence compared with the corresponding uncoupled levels.

A direct-conversion mixer with a DC-offset cancellation for WLAN

This paper presents a 5GHz double-balanced mixer with DC-offset cancellation circuit for direct-conversion receiver compliant with IEEE 802.11a wireless LAN standard. The analog feedback loop is used, to eliminate the DC-offset at the output of the double-balanced mixer. The test results show that the mixer with DC-offset cancellation circuit has voltage conversion gain of 9.5dB at 5.15GHz, noise figure of 13.5dB, IIP3 of 7.6 dBm, 1.73mV DC-offset voltage and 67mW power with 3.3-V power supply. The DC-offset cancellation circuit has less than 0.1mm(2) additional area and 0.3mW added power dissipation. The direct conversion WLAN receiver has been implemented in a 0.35 mu m SiGe BiCMOS technology.

Si based quantum cascade structure: from energy band structures design to materials growth

In this paper, we propose an n-type vertical transition bound-to-continuum Ge/SiGe quantum cascade structure utilizing electronic quantum wells in the L and Gamma valleys of the Ge layers. The optical transition levels are located in the quantum wells in the L valley. The Gamma-L intervalley scattering is used to depopulate the lower level and inject the electrons into the upper level. We also show that high quality Si1-yGey pseudosubstrate is obtained by thermal annealing of Si1-xGex/Ge/Si structure. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Two-dimensional photonic crystals with a large photonic band gap designed by a rapid genetic algorithm

We used Plane Wave Expansion Method and a Rapid Genetic Algorithm to design two-dimensional photonic crystals with a large absolute band gap. A filling fraction controlling operator and Fourier transform data storage mechanism had been integrated into the genetic operators to get desired photonic crystals effectively and efficiently. Starting from randomly generated photonic crystals, the proposed RGA evolved toward the best objectives and yielded a square lattice photonic crystal with the band gap (defined as the gap to mid-gap ratio) as large as 13.25%. Furthermore, the evolutionary objective was modified and resulted in a satisfactory PC for better application to slab system.

A direct-conversion mixer with DC-offset cancellation for IEEE 802.11a WLAN receiver

A DC-offset cancellation scheme in the 5GHz direct-conversion receiver compliant with IEEE 802.11a wireless LAN standard is described in this paper. It uses the analog feedback loop to eliminate the DC-offset at the output of the double-balanced mixer. The mixer has a simulation voltage conversion gain of IMB at 5.2GHz, noise figure of 9.67dB, IIP3 of 7.6dBm. The solution provides 39.1dB reduction according to the leakage value at LO and mixer load resistors, the additional noise figure added to mixer is less than 0.9dB, the added power dissipation is 0.1mW and was fabricated in 60GHz 0.35 mu m SiGe BiCMOS technology.

Research on the band-gap of InN grown on siticon substrates

Photoluminescence (PL) and absorption experiments were carried out to examine the fundamental band-gap of InN films grown on silicon substrates. A strong PL peak at 0.78 eV was observed at room temperature, which is much lower than the commonly accepted value of 1.9 eV. The integrated PL intensity was found to depend linearly on the excitation laser intensity over a wide intensity range. These results strongly suggest that the observed PL is related to the emission of the fundamental inter-band transitions of InN rather than to deep defect or impurity levels. Due to the effect of band-filling with increasing free electron concentration, the absorption edge shifts to higher energy. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A high-gain high-linearity wide-band low noise amplifier for terrestrial and cable receptions

This paper presents the design of a wide-band low-noise amplifier (LNA) implemented in a 0.35 mu m SiGe BiCMOS technology for cable (DVB-C) and terrestrial (DVB-T) tuner applications. The LNA utilizes current injection to achieve high linearity. Without using inductors, the LNA achieves 0.1-1GHz wide bandwidth and 18.8-dB gain with less than 1.4-dB gain variation. The noise figure(NF) of the wideband LNA is 5dB, its 1-dB compression point is -2dBm and IIP3 is 8dBm. The LNA dissipates 120mW power with a 5-V supply.

A novel ultra-narrow transmission-band fiber Bragg grating and its application in a single-longitudinal-mode fiber laser with improved efficiency

A novel design approach to ultra-narrow transmission-band fiber Bragg grating (FBG) is proposed and demonstrated for the first time. The new grating consists of multiple identical distributed-Bragg reflector (DBR) cavities and a it-phase-shifted gap, and hence, the proposed laser is constructed by the cascade of these identical DBR fiber lasers. By manufacturing the proposed grating in a piece of Er-Yb codoped fiber, a single-wavelength single-longitudinal-mode (SLM) fiber laser with improved efficiency is demonstrated experimentally. The experimental results show that the pump-to-signal conversion efficiency of the proposed laser is improved by a factor of two in comparison with the optimized distributed-feedback (DFB) fiber lasers. (c) 2007 Elsevier B.V. All rights reserved.

A dual-wavelength sampled fiber Bragg grating and its application in L-band dual-wavelength erbium-doped fiber lasers

A novel dual-wavelength (DW) sampled fiber Bragg grating (SFBG) is proposed and demonstrated for the first time to the author's best knowledge. This kind of SFBG can realize a DW operation with uniform reflection peaks rather than multiple nonuniform peaks shown in conventional SFBGs. Based on the designed SFBG, we have proposed a novel L-band DW erbium-doped fiber laser, which has such a unique merit that the spacing of the two wavelengths keeps unchanged during tuning laser.