一种新型掺铒碲酸盐玻璃的光谱性质研究

研究了一种新型掺Er^3+碲酸盐玻璃的光谱性质；应用Judd-Ofelt理论计算了碲酸盐玻璃中Er^3+离子的强度参数Ω(Ω2=4．79×10^-20cm^2，Ω4=1．52×10^-20cm^2，Ω6=0．66×10^-20cm^2)，计算了离子的自发跃迁概率，荧光分支比；应用McCumber理论计算了Er^3+的受激发射截面(σe=10．40×10^-21cm^2)，Er^3+离子^4I13/2→^4I15/2发射谱的荧光半高宽(FWHM=65．5nm)及各能级的荧光寿命(^4I13/2能级为τrad

Spectroscopic properties and Judd-Ofelt theory analysis of Dy3+ doped oxyfluoride silicate glass

Dy3+ doped oxyfluoride silicate glass was prepared and its optical absorption, 1.3 mu m emission, and upconversion luminescence properties were studied. Furthermore, the Judd-Ofelt [Phys. Rev. 127, 750 (1962); J. Chem. Phys. 37, 511 (1962)] intensity parameters, oscillator strengths, spontaneous transition probability, fluorescence branching ratio and radiative lifetime were calculated by Judd-Ofelt theory, while stimulated emission cross section of H-6(9/2)+F-6(11/2)-> H-6(15/2) transition was calculated by McCumber theory [Phys. Rev. A. 134, 299 (1964)]. According to the obtained Judd-Ofelt intensity parameters Omega(2)=2.69x10(-20) cm(2), Omega(4)=1.64x10(-20) cm(2), and Omega(6)=1.64x10(-20) cm(2), the radiative lifetime was calculated to be 810 mu s for 1.3 mu m emission, whose full width at half maximum and sigma(e) were 115 nm and 2.21x10(-20)cm(2), respectively. In addition, near infrared to visible upconversion luminescence was observed and evaluated. The results suggest that Dy3+ doped oxyfluoride silicate glass can be used as potential host material for developing broadband optical amplifiers and laser applications.

Infrared broadband emission of bismuth-doped barium-aluminum-borate glasses

We report near infrared broadband emission of bismuth-doped barium-aluminum-borate glasses. The broadband emission covers 1.3 mum window in optical telecommunication systems. And it possesses wide full width at half maximum (FWHM) of similar to 200nm and long lifetime as long as 350 mus. The luminescent properties are quite sensitive to glass compositions and excitation wavelengths. Based on energy matching conditions, we suggest that the infrared emission may be ascribed to P-3(1) --> P-3(0) transition of Bi+. The broad infrared emission characteristics of this material indicate that it might be a promising candidate for broadband optical fiber amplifiers and tunable lasers. (C) 2005 Optical Society of America.

Near infrared broadband emission of bismuth-doped aluminophosphate glass

Near infrared broadband emission characteristics of bismuth-doped aluminophosphate glass have been investigated. Broad infrared emissions peaking at 1210nm, 1173nm and 1300nm were observed when the glass was pumped by 405nm laser diode (LD), 514nm Ar+ laser and 808nm LD, respectively. The full widths at half maximum (FWHMs) are 235nm, 207nm and 300nm for the emissions at 1210nm, 1173nm and 1300nm, respectively. Based on the energy matching conditions, it is suggested that the infrared emission may be ascribed to P-3(1) --> P-3(0) transition of Bi+. The broadband infrared luminescent characteristics of the glasses indicate that they are promising for broadband optical fiber amplifiers and tunable lasers. (C) 2005 Optical Society of America.

Fabrication of a Low-Loss SSC Using High-Dose Electron Beam Lithography Exposure With Negative PMMA Resist

A silicon-on-insulator optical fiber-to-waveguide spot-size converter (SSC) using Poly-MethylMethAcrylate (PMMA) is presented for integrated optical circuits. Unlike the conventional use of PMMA as a positive resist, it has been successfully used as a negative resist with high-dose electron exposure for the fabrication of ultrafine silicon wire waveguides. Additionally, this process is able to reduce the side-wall roughness, and substantially depresses the unwanted propagation loss. Exploiting this technology, the authors demonstrated that the SSC can improve coupling efficiency by as much as over 2.5 dB per coupling facet, compared with that of SSC fabricated with PMMA as a positive resist with the same dimension.

Hyperfine spectral structure of semiconductor lasers

In this paper, we propose an interference technique that can provide a quantitative and ultrafine-resolution spectral analysis because the optical heterodyning is performed at nonzero frequency and interfering waves propagate in optical fiber. The spectrum of a laser consists of a large number of wave trains. Our study is focused on the features of wave trains. We demonstrate that wave trains emitting simultaneously have random frequency spacings, and the probability of occurrence of two or more joint wave trains with the same frequency is high. The estimated linewidth of the wave train is narrower than 1 mHz, corresponding to a wavelength range of 10(-23) m.

1.55-mu m ridge DFB laser integrated with a buried-ridge-stripe dual-core spot-size converter by quantum-well intermixing

A ridge distributed feedback laser monolithically integrated with a buried-ridge-stripe spot-size converter operating at 1.55 mu m was successfully fabricated by means of low-energy ion implantation quantum-well intermixing and dual-core technologies. The passive waveguide was optically combined with a laterally exponentially tapered active core to control the mode size. The devices emit in a single transverse and single longitudinal mode with a sidemode suppression ratio of 38.0 dB. The threshold current was 25 mA. The beam divergence angles in the horizontal and vertical directions were as small as 8.0 degrees x 12.6 degrees, respectively, resulting in 3.0-dB coupling loss with a cleaved single-mode optical fiber.

Laser diode monolithically integrated with an electroabsorption modulator and dual-waveguide spot-size converter

A 1.60-mu m laser diode and electroabsorption modulator monolithically integrated with a dual-waveguide spot-size converter output for low-loss coupling to cleaved single-mode optical fiber is demonstrated. The devices emit in a single transverse and quasi-single longitudinal mode with a side mode suppression ratio of 25.6 dB. These devices exhibit a 3-dB modulation bandwidth of 16.0 GHz, and modulator extinction ratios of 16.2 dB dc. The beam divergence angle is about 7.3x10.6 deg, resulting in 3.0-dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Society of Photo-optical Instrumentation Engineers.

Electroabsorption-Modulated DFB laser Integrated.With dual-core spot-size converters

A 1.55-mu m single shallow ridge electroabsorptionmodulated distributed feedback laser that is monolithically integrated with a buried-ridge-stripe dual-core spot-size converter (SSC) at the input and output ports was fabricated by combining selective area growth, quantum-well intermixing, and dual-core integration techniques simultaneously. These devices exhibit a threshold current of 34 mA, a side mode suppression ratio of 38.0 dB, a 3-dB modulation bandwidth of 11.0 GHz, and a modulator extinction ratio of 25.0 dB dc. The output beam divergence angles of the SSC in the horizontal and vertical directions are as small as 7.3 degrees x 18 degrees, respectively, resulting in 3.2-dB coupling loss with a cleaved single-mode optical fiber.

Temperature-independent FBG pressure sensor with high sensitivity

This study develops a fiber Bragg grating (FBG) pressure sensor partly shielded with a metal tube. The thermal-strain cross effect is avoided and its pressure sensitivity is increased to -2.44 x 10(-3) MPa, about 1200 times as that of a bare fiber grating. Due to its good sensing linearity, this sensor can be applied in the measurement of hydraulic pressure and vibration. (c) 2006 Elsevier Inc. All rights reserved.

Influences of quantum noises on direct-modulated properties of 1.3-mu m InGaAsP/InP laser diodes

Due to the zero dispersion point at 1.3-mu m in optical fibres, 1.3-mu m InGaAsP/InP laser diodes have become main light sources in fibre communication systems recently. In fluences of quantum noises on direct-modulated properties of single-mode 1.3-mu m InGaAsP/InP laser diodes are investigated in this article. Considering the carrier and photon noises and the cross-correlation between the two noises, the power spectrum of the photon density and the signal-to-noise ratio (SNR) of the direct-modulated single-mode laser system are calculated using the linear approximation method. We find that the stochastic resonance (SR) always appears in the dependence of the SNR on the bias current density, and is strongly affected by the cross-correlation coeffcient between the carrier and photon noises, the frequency of modulation signal, and the photon lifetime in the laser cavity. Hence, it is promising to use the SR mechanism to enhance the SNR of direct-modulated InGaAsP/InP laser diodes and improve the quality of optical fibre communication systems.

Stochastic resonance in quantum-well semiconductor lasers

The quantum well (QW) semiconductor lasers have become main optical sources for optical fibre communication systems because of their higher modulation speed, broader modulation bandwidth and better temperature characteristics. In order to improve the quality of direct-modulation by means of the stochastic resonance (SR) mechanism in QW semiconductor lasers, we investigate the behaviour of the SR in direct-modulated QW semiconductor laser systems. Considering the cross-correlated carrier noise and photon noise, we calculate the power spectrum of the photon density and the signal-to-noise ratio (SNR) of the direct-modulated laser system by using the linear approximation method. The results indicate that the SR always appears in the dependence of the SNR on the bias current density, and is strongly affected by the cross-correlation coefficient of the carrier and photon noises, the frequency of modulation signal, and the photon lifetime in the laser cavity.

1.55-mu m Ridge DFB laser and electroabsorption modulator integrated with buried-ridge-stripe dual-waveguide spot-size converter output

A 1.55-mu m ridge distributed feedback laser and electroabsorption modulator monolithically integrated with a buried-ridge-stripe dual-waveguide spot-size converter (SSC) at the output port for low-loss coupling to a cleaved single-mode optical fiber was fabricated by means of selective area growth, quantum-well intermixing, and dual-core technologies. These devices exhibit threshold current of 28 mA, 3-dB modulation bandwidth of 12.0 GHz, modulator extinction ratios of 25.0-dB dc. The output beam divergence angles of the SSC in the horizontal and vertical directions are as small as 8.0 degrees x 12.6 degrees, respectively, resulting in 3.2-dB coupling loss with a cleaved single-mode optical fiber.

A novel 1.3-mu m high T-0 AlGaInAs/InP strained-compensated multi-quantum well complex-coupled distributed feedback laser diode

A 1.3-mu m AlGaInAs/InP buried heterostructure (BH) stripe distributed feedback laser with a novel AlInAs/InP complex-coupled grating grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is proposed and demonstrated. A high characteristic temperature (T-0 = 90K between 20-80 degrees C) and temperature-insensitive slope efficiency (0.25 dB drop from 20 to 80 degrees C) in 1.3 mu m AlGaInAs/InP DFB lasers was obtained by introducing AI(Ga)InAs graded-index separate-confinement heterostructure (GRINSCH) layers and a strained-compensated (SC) multi-quantum well (MQW).

Electroabsorption-modulated DFB laser integrated with dual-waveguide spot-size converter - art. no. 60200N

A 1.55-mu m ridge DFB laser and electroabsorption modulator monolithically integrated with a buried-ridge-stripe dual-waveguide spot-size converter at the output port for low-loss coupling to a cleaved single-mode optical fiber was fabricated by means of selective area growth, quantum well intermixing and dual-core technologies. These devices exhibit threshold current of 28 mA, side mode suppression ratio of 38.0 dB, 3-dB modulation bandwidth of 12.0 GHz, modulator extinction ratios of 25.0 dB dc. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 8.0 degrees x 12.6 degrees, respectively, resulting in 3.2 dB coupling loss with a cleaved single-mode optical fiber.