Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer

An InAlAs native oxide is used to replace the p-n reverse-biased junction in a conventional buried heterostructure InP-based laser. This technique reduces the number of regrowth steps and eliminates leakage current under high-temperature operation. The InAlAs native oxide buried heterostructure (NOBH) laser with strain-compensated InGaAsP/InP multiple quantum well active layers has a threshold current of 5.6 mA, a slope efficiency of 0.23 mW/mA, and a linear power up to 22.5 mW with a HR-coated facet. It exhibits single transverse mode with lasing wavelength at 1.532 mu m. A characteristic temperature (T-0) of 50 K is obtained from the NOBH laser with a nonoptimized oxide layer width. (C) 1998 American Institute of Physics. [S0003-6951(98)01352-7].

Single dipole mode photonic crystal laser on InGaAsP/InP QW waveguide slab - art. no. 698436

Single point defect microcavity possesses only the degenerate dipole modes under certain photonic crystal structure parameters. By deforming lattice structure, the degeneracy of the dipole modes has been broken. Theoretical simulation shows the large splitting of 65nm between the splitted x-mode and y-mode, approximate to the luminescent gain spectrum, which benefits for the single mode lasing. Experimentally the single dipole mode lasing, y-mode, is achieved in the deformed microcavity.

Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D

We have developed a novel InP-based, ridge-waveguide photonic integrated circuit (PIC), which consists of a 1.1-um wavelength Y-branch optical waveguide with low loss and improved far field pattern and a 1.3-um wavelength strained InGaAsP-InP multiple quantum-well superluminescent diode, with bundle integrated guide (BIG) as the scheme for monolithic integration. The simulations of BIG and Y-branches show low losses and improved far-field patterns, based on the beam propagation method (BPM). The amplified spontaneous emission of the device is up to 10 mW at 120 mA with no threshold and saturation. Spectral characteristics of about 30 nm width and less than I dB modulation are achieved using the built-in anti-lasing ability of Y-branch. The beam divergence angles in horizontal and vertical directions are optimized to as small as 12 degrees x8 degrees, resulting in good fiber coupling. The compactness, simplicity in fabrication, good superluminescent performance, low transmission loss and estimated low coupling loss prove the BIG and Y-branch method to be a feasible way for integration and make the photonic integrated circuit of Y-branch and superluminescent diode an promising candidate for transmitter and transceiver used in fiber optic gyroscope.

Experimental investigation of slow light phenomenon in photonic crystal waveguide line defect laser

The guide mode whose frequency locates in the band edge in photonic crystal single line defect waveguide has very low group velocity. So the confinement and gain of electromagnetic field in the band edge are strongly enhanced. Photonic crystal waveguide laser is fabricated and the slow light phenomenon is investigated. The laser is pumped by pulsed pumping light at 980nm whose duty ratio is 0.05%. The active layer in photonic crystal slab is InGaAsP multiple quantum well. Light is transimited by a photonic crystal chirp waveguide in one facet of the laser. Then the output light is coupled to a fiber and the character of laser is analysis by an optical spectrometer. It is found that single mode and multimode happens with different power of pumping light. Meanwhile the plane wave expansion and finite-difference time-domain methods are used to simulate the phenomenon of slow light. And the result of the experiment is compared with the theory which proves the slow light results in lasing oscillation.

Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V

An extended subtraction method of scattering parameters for characterizing laser diode is introduced in this paper. The intrinsic small-signal response can be directly extracted from the measured transmission coefficients of laser diode by the method. However the chip temperature may change with the injection bias current due to thermal effects, which causes inaccurate intrinsic response by our method. Therefore, how to determine the chip temperature and keep the laser chip adiabatic is very critical when extracting the intrinsic response. To tackle these problems, the dependence of the lasing wavelength of the laser diode on the chip temperature is investigated, and an applicable measurement setup which keeps the chip temperature stable is presented. The scattering parameters of laser diode are measured on diabatic and adiabatic conditions, and the extracted intrinsic responses for both conditions are compared. It is found that the adiabatic intrinsic responses are evidently superior to those without thermal consideration. The analysis indicates that inclusion of thermal effects is necessary to acquire accurate intrinsic response.

Dipole mode photonic crystal point defect laser on InGaAsP/InP

In this paper, we focus on the dipole mode of the two-dimensional (2D) photonic crystal (PC) single point defect cavity (SPDC) lasers and we report the fabrication and characterization of 2D PC SPDC lasers with the structure of adjusted innermost air holes. The photonic band and cavity Q factors are simulated by means of plane wave expansion (PWE) and finite-difference time-domain (FDTD), respectively. In order to improve the optical confinement of the SPDC, the diameter of the innermost holes was adjusted. Different lasing performances are observed experimentally. The experimental results agree with the theoretical prediction very well. (c) 2006 Elsevier B.V. All rights reserved.

Single-mode holey vertical-cavity surface-emitting laser with ultra-narrow beam divergence

We demonstrated oxide-confined 850-nm vertical-cavity surface-emitting lasers (VCSELs) with a two-dimensional petal-shaped holey structure composed of several annular-sector-shaped holes. Four types of devices with different hole numbers were designed and fabricated. The measured results showed that the larger hole number was beneficial to purifying the lasing mode, and realizing the single-mode operation. The side mode suppression ratio (SMSR) exceeded 30 dB throughout the entire drive current. Mode selective loss mechanism was used to explain the single-mode characteristic. The single-mode devices possessed good beam profiles, and the lowest divergence angle was as narrow as 3.2 degrees (full width at half maximum), attributed to the graded index profile and the shallow etching in the top distributed Bragg reflector (DBR).

Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers

Temperature-dependent modulation characteristics of 1.3 mu m InAs/GaAs quantum dot (QD) lasers under small signals have been carefully studied at various bias currents. Based on experimental observations, it is found that the modulation bandwidth significantly increases when excited state (ES) lasing emerges at high temperature. This is attributed to additional photons emitted by ES lasing which contribute to the modulation response. A rate equation model including two discrete electron energy levels and the level of wetting layer has been used to investigate the temperature-dependent dynamic behavior of the QD lasers. Numerical investigations confirm that the significant jump for the small signal modulation response is indeed caused by ES photons. Furthermore, we identify how the electron occupation probabilities of the two discrete energy levels can influence the photon density of different states and finally the modulation rate. Both experiments and numerical analysis show that the modulation bandwidth of QD lasers at high temperature can be increased by injecting more carriers into the ES that has larger electron state degeneracy and faster carrier's relaxation time than the ground state.

The Fabrication of Eight-Channel DFB Laser Array Using Sampled Gratings

An eight-channel monolithically integrated complex-coupled distributed-feedback laser array based on sampled gratings has been designed and fabricated. Selective lasing at different wavelengths is obtained. The frequency separation between each adjacent channel is about 200 GHz. The typical threshold current is between 30 and 40 mA. The optical output power of each channel is about 10 mW at an injection current of 100 mA. The continuous tuning of emission wavelength with injected currents is also demonstrated.

A Selective-Area Metal Bonding InGaAsP-Si Laser

A 1.55-mu m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two Si blocking stripes, each with an excess-metals accommodated space, were used to separate the optical coupling area and the metal bonding areas. In such a structure, the air gap between the InGaAsP structure and Si waveguide has been reduced to be negligible. The laser operates with a threshold current density of 1.7 kA/cm(2) and a slope efficiency of 0.05 W/A under pulsed-wave operation. Room-temperature continuous lasing with a maximum output power of 0.45 mW is realized.

Synthesis and random laser application of ZnO nano-walls: a review

This review paper summarises briefly some important achievements of our recent research on the synthesis and novel applications of nanostructure ZnO such as honeycomb shaped 3-D (dimension) nano random-walls. A chemical reaction/vapour transportation deposition technique was employed to fabricate this structure on ZnO/SiO2/Si substrate without any catalyst and additive in a simple tube furnace to aim the low-cost and high qualified samples. Random laser action with strong coherent feedback at the wavelength between 375 nm and 395 nm has been firstly observed under 355 nm optical excitation with threshold pumping intensity of 0.38 MW/cm(2).

Multi-wavelength erbium-doped fibre lasers on assistance of high-nonlinear photonic-crystal fibres

On the basis of self-stability effect of four-wave mixings (FWMs) in high-nonlinear photonic-crystal fibres, a novel multi-wavelength erbium-doped fibre (EDF) laser is proposed and demonstrated experimentally at room temperature. The proposed lasers have the capacity of switching and tuning with excellent uniformity and stability. By means of adjusting the attenuators, the triple-, four-, or five-wavelength EDF lasers can be lasing simultaneously. With the assistance of the FWM self-stability function, the multi-wavelength spectrum is excellently stabilized with uniformity less than 0.9 dB.

A novel dual-wavelength DFB fiber laser based on symmetrical FBG structure

A novel grating structure is proposed and demonstrated to obtain stable dual-wavelength (DW) distributed-feedback (DFB) fiber lasers at room temperature. The proposed grating is based on a symmetrical structure, where one half is periodically sampled by "0"-to-"pi" period and the other half is done by "pi"-to-"0" period. This structure can create two separated resonance cavities and hence achieve the stable DW lasing operation. By fabricating the proposed grating on a piece of Er: Yb-codoped fiber, we experimentally obtain a stable DW-DFB fiber laser with wavelength spacing of similar to 440 pm at room temperature.

Yb3+-doped 200 mu m diameter core, gain guided index-antiguided fiber

The lasing in an end-pumped gain guided index-antiguided (GG-IAG) Yb3+-doped silicate glass fiber with a 200 mu m diameter core is demonstrated. Laser beams with similar beam propagation factors M (2) and mode field diameters W (0) (> 160 mu m) were observed at the output end of the GG-IAG fibers under different pump powers, which indicated that single mode behavior and excellent beam quality were achieved during propagation. Furthermore, the laser amplifier characteristics in the present Yb3+-doped GG-IAG fiber were also evaluated.

染料掺杂聚合物薄膜的激光行为研究

自20世纪60年代发展到现在，激光技术发展的速度十分惊人，应用的范围不断拓展，近年来随着有机/聚合物电致发光材料在有机发光二极管上的应用以及有机晶体管和有机太阳能电池的研制成功，科学家们开始了有机/聚合物材料放大自发发射和激光发射行为的研究。到目前为止，已经开发出了这种廉价、可以大面积成膜的、具有更广泛应用范围的有机/聚合物固体激光材料及光泵浦激光器。有机/聚合物激光器的出现不仅向传统激光理论提出了新的挑战，而且具有诸多潜在的应用价值。可以断言，在21世纪知识经济的大潮中，有机/聚合物激光器的研究必将推动传统学科的发展和新兴学科形成，也必将为人类带来巨大的经济效益。新的有机激光材料不断涌现、器件结构不断推陈出新、新的激发原理不断提出并得到修正已经成为有机/聚合物固体激光研究领域的三大特点。本论文进行了利用Förster能量传递对荧光染料DCJTB放大自发发射行为的优化、基于放大自发发射的红光染料DCJTB掺杂聚合物薄膜的白光发射、多孔结构对荧光染料放大自发发射行为的优化以及基于纳米结构的荧光染料DCJTB掺杂聚合物薄膜的激光行为等方面的研究工作，具体研究内容如下: 1、利用Förster能量传递理论，系统地研究了两种或三种染料共掺杂聚合物薄膜的放大自发发射（ASE）行为。研究表明，两种染料共掺杂显著改善了掺杂聚合物薄膜的ASE阈值、增益和损耗特性，而三种染料共掺杂，由于更多的Förster能量传递，使掺杂聚合物薄膜的ASE阈值、增益和损耗性能得到了进一步的改善。将Alq3和C545T两种绿光染料同时掺杂到DCJTB：PS中，通过利用Alq3和C545T同时的能量传递效应，已经使Alq3:C545T:DCJTB：PS薄膜的阈值、增益和损耗分别达到了0.007 mJ/pulse、52 cm-1和7 cm-1。 2、将红色荧光染料DCJTB掺杂到蓝色聚合物PFO中，通过控制DCJTB在PFO中的浓度，我们获得了具有放大自发发射的白光发射，当DCJTB在PFO的掺杂浓度为0.3%时显示了最好的白光ASE特性， 白光中DCJTB和PFO发射的阈值、增益和损耗分别达到了0.072 mJ pulse-1，0.035 mJ pulse-1；36.3 cm-1，22.35 cm-1和7.39 cm-1，15.88 cm-1。我们的结果表明，DCJTB掺杂聚合物PFO体系是实现ASE白光发射的有效方法，拓展了ASE的应用范围。 3、开发出了二维多孔SBA-15和三维TiO2反蛋白石光子晶体两种实现有机ASE有效发射的两种结构，通过利用有序结构的SBA-15的量子限域效应优化了蓝光染料C151的ASE阈值、增益和损耗特性，而通过利用三维TiO2反蛋白石光子晶体的量子限域效应，也使包埋其中的绿光染料C545T的ASE特性得到了明显改善。研究表明，无论是二维SBA-15多孔结构还是三维TiO2反蛋白石光子晶体结构，通过其量子限域效应都能很好地优化包埋其中的荧光染料的ASE特性，为进一步优化有机半导体的ASE特性提供了新的思路。 4、将聚苯乙烯纳米球分散到DCJTB:PS薄膜中和把DCJTB:PS薄膜旋涂在ZnO纳米柱阵列上两种方法，我们已经成功地研制出了多模随机有机激光发射器件。详细研究表明，多模随机有机激光发射特性显著地与聚苯乙烯纳米球的尺寸和浓度以及ZnO纳米柱的疏密程度密切相关，优化后的聚苯乙烯纳米球掺杂DCJTB:PS薄膜的阈值已经达到了0.06 mJ pulse-1cm-2，而ZnO纳米柱包埋DCJTB:PS薄膜的阈值达到了0.375 mJ pulse-1cm-2。我们的结果表明，聚苯乙烯纳米球和ZnO纳米柱都是实现随机有机激光的非常好的散射介质材料。