红外飞秒激光诱导Ce^3＋掺杂闪烁晶体的上转换发光研究

本文研究了红外飞秒激光照射下Ce^3＋ 掺杂的YAP和LSO两种闪烁晶体的上转换发光现象.实验发现在飞秒激光泵浦下,这两种晶体的荧光均来自于Ce^3＋离子的5d-4f跃迁.荧光强度与泵浦光功率之间的依赖关系揭示了Ce^3＋：YAP和Ce^3＋：LSO晶体的上转换过程皆由三光子吸收过程所主导.分析表明,Ce^3＋：YAP和Ce^3＋：LSO晶体中的三光子吸收是三光子同时吸收.

Diode-pumped room-temperature continuous wave Tm3+ doped Lu2SiO5 laser

We report on room temperature laser actions of a novel thulium-doped crystal Tm center dot Lu2SiO5 (LSO) under diode pumping. An optical optical conversion efficiency of 12% and a slope efficiency of 21% were obtained with the maximum continuous wave (CW) output power of 0.67 W. The emission wavelengths of Tm LSO laser were centered at 2058.4 nm with bandwidth of similar to 13.6 nm.

Fabrication and spectral properties of Nd3+-doped yttrium lanthanum oxide transparent ceramics

Transparent 1 at% Nd3+:Y1.9La0.1O3 ceramics were fabricated with nanopowders prepared by carbonate coprecipitation method. The powder compacts were sintered in H-2 atmosphere at 1550 degrees C for 30 h. The Nd3+:Y1.9La0.1O3 ceramics display uniform grains of about 50 mu m and high transparency. The highest transmittance of the ceramics reaches 67%. The strongest absorption peak is in the wavelength of 820 nm with absorption cross section of 2.48 x 10(-20) cm(2). The absorption is still high at LD wavelength 806 nm with absorption cross section of 1.78 x 10(-20) cm(2) and broad full width at half maximum (FWHM) of about 6.3 nm. The strongest emission peak was centered at 1078 nm with large stimulated emission cross section of 9.63 x 10(-20) cm(2) and broad FWHM of about 7.8 nm. The broad absorption and emission bandwidth of Nd3+:y(1.9)La(0.1)O(3) transparent ceramics are favorable to achieve the miniaturized LD pumping apparatus and ultrashort modelocked pulse laser output, respectively. (c) 2007 Elsevier B.V. All rights reserved.

Judd-Ofelt analysis of spectra and experimental evaluation of laser performance of Tm3+ doped Lu2SiO5 crystal

This paper reports that the TM3+:Lu2SiO5 (Tm:LSO) crystal is grown by Czochralski technique. The room-temperature absorption spectra of Tm:LSO crystal are measured on a b-cut sample with 4 at.% thulium. According to the obtained Judd-Ofelt intensity parameters Omega(2)=9.3155 x 10(-20) cm(2), Omega(4)=8.4103 x 10(-20) cm(2), Omega(6)=1.5908 x 10(-20) cm(2), the fluorescence lifetime is calculated to be 2.03 ms for F-3(4) -> H-3(6) transition, and the integrated emission cross section is 5.81 x 10(-18) cm(2). Room-temperature laser action near 2 mu m under diode pumping is experimentally evaluated in Tm:LSO. An optical-optical conversion efficiency of 9.1% and a slope efficiency of 16.2% are obtained with continuous-wave maximum output power of 0.67 W. The emission wavelengths of Tm:LSO laser are centred around 2.06 mu m with spectral bandwidth of similar to 13.6 nm.

利用窄得-奥菲特理论研究Tm:Lu_2SiO_5晶体的光谱特性

采用丘克拉斯基(Czochralski)技术生长了掺铥硅酸镥(Tm∶Lu2SiO5,Tm∶LSO)晶体;测量了LSO晶体在室温下的非偏振吸收光谱和非偏振荧光光谱;利用窄得-奥菲特(Judd-Ofelt)理论计算了Tm∶LSO晶体的窄得-奥菲特强度参数、振子强度、自发辐射概率、辐射寿命、积分吸收截面和积分发射截面.Tm∶LSO晶体的强度参数为Ω2=9.1355×10-20cm2,Ω4=8.4103×10-20cm2,Ω6=1.5908×10-20cm2;Tm∶LSO晶体在1.9μm附近有明显的发射峰(3F4→3H6跃迁),相应的辐射寿命为2.03 ms,积分发射截面为5.81×10-18cm2,半峰全宽(FWHM)为250 nm.用Tm∶LSO晶体在77 K温度下实现了激光运转.利用792 nm的激光二极管(LD)作为抽运源,获得中心波长为1960 nm的激光输出,抽运阈值为2.13 kW/cm2.

高真空室中的水蒸气对HfO2薄膜性能的影响

本文研究了在镀膜过程中真空室内水蒸气的含量对HfO2薄膜物理性能的影响。用电子束蒸发和光电极值监控的方法在BK7基底上制备HfO2薄膜。利用残余气体分析仪在线监测了真空室内的残余气氛组成。分别用Lambda 900光谱仪、X射线衍射方法、表面热透镜技术和1064nm的激光器测试了薄膜的光学性能、微结构、吸收和激光损伤阈值。实验发现，附加冷阱装置有助于我们有效控制镀膜过程中的水汽含量，且在水蒸气含量较少的真空室内镀制的薄膜具有较高的折射率，较小的晶粒尺寸，较低的弱吸收值和较高的损伤阈值。

Optimization of operational conditions in a submerged membrane bioreactor

In this study, optimization of operational conditions of a submerged membrane bioreactor treating municipal waste-water was studied. Mixed liquid suspended solid (MLSS), membrane flux (J(v)), aeration (Q), ratio of pumping, time to break time (t(p)/t(b)), and ratio of up flow area to down flow area (A Ad) were chosen as the easily manipulable parameters to study their effects on removal efficiency and membrane fouling. Totally, 16 different runs were designed to compare and select the best combination of the 5 parameters. The results showed that the optimal operational conditions were MLSS = 7g(.)L(-1), J(v) = 10L(.)m(-2.)h(-1), Q = 6 m(3.)h(-1), t(p)/t(b)= 4 min/1 min, and A(r)/A(d) = 1.7 m(2)/m(2). Under such conditions, the SMBR could achieve a double win of high removal efficiency and low membrane fouling.

Redescription of Camallanus hypophthalmichthys Dogel and Akhmerov, 1959 (Nematoda : Camallanidae) and its first record from fishes in China

The nematode Camallanus hypophthalmichthys Dogel and Akhmerov, 1959 is redescribed from specimens collected from the intestine of the bighead carp Aristichthys nobilis, from Liangzihu Lake (Yangtze River basin), Hubei Province, central China. The light and scanning electron microscopical examination made it possible to study in detail the morphology of this so far little-known species and to confirm its validity. The main specific features of C. hypophthalmichthys distinguishing it from the most similar Camallanus spp. is the presence of 3 small caudal processes on the male tail tip, 13-16 longitudinal ridges on the inner surface of the valve of the buccal capsule, and the arrangement of preanal and postanal genital papillae in the male. This finding represents a new host record, the first record of this parasite in the Yangtze River basin, and the first documented record of C. hypophthalmichthys from China. Camallanus hypophthalmichthys is considered a specific intestinal parasite of fishes of the cyprinid Hypophthalmichthyinae.

Broad host range plasmid-based gene transfer system in the cyanobacterium Gloeobacter violaceus which lacks thylakoids

Gloeobacter violaceus, a cyanobacterium lack of thylakoids, is refractory to genetic manipulations because its cells are enveloped by a thick gelatinous sheath and in colonial form. In this study, a large number of single cells were obtained by repeated pumping with a syringe with the gelatinous sheath removed. And an exogenous broad host range plasmid pKT210 was conjugatively transferred into G. violaceus. Analyses with dot-blot hybridization and restriction mapping showed that the exogenous plasmid pKT210 had been introduced into G. violaceus and stably maintained with no alteration in its structure. pKT210 extracted from G. violaceus exconjugants could be transformed into the mcr - mrr - E. coli strain DH10B but not the mcr(+) mrr(+) strain DH5alpha, which suggests that a methylase system may be present in G. violaceus.

Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs

We report that, by linearly polarized pumping of different wavelengths, Kerr transients appear at zero magnetic field only in the case when GaMnAs samples are initialized at 3 K by first applying a 0.8 Tesla field and then returning to zero field. We find that, instead of magnetization precession, the near-band gap excitation induces a coherent out-of-plane turning of magnetization, which shows very long relaxation dynamics with no precession. When photon energy increases, the peak value of the Kerr transient increases, but it decays rapidly to the original slow transient seen under the near-band-gap excitation.

Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region

We have fabricated and characterized GaN-based vertical cavity surface emitting lasers (VCSELs) with a unique active region structure, in which three sets of InGaN asymmetric coupled quantum wells are placed in a half-wavelength (0.5 lambda) length. Lasing action was achieved under optical pumping at room temperature with a threshold pumping energy density of about 6.5 mJ/cm(2). The laser emitted a blue light at 449.5 nm with a narrow linewidth below 0.1 nm and had a high spontaneous emission factor of about 3.0x10(-2). The results indicate that this active region structure is useful in reducing the process difficulties and improving the threshold characteristics of GaN-based VCSELs.

Blue-green optically pumped GaN-based vertical cavity surface emitting laser

Blue-green GaN-based vertical cavity surface emitting lasers (VCSELs) were fabricated with two dielectric Ta2O5/SiO2 distributed Bragg reflectors. Lasing action was observed at a wavelength of 498.8 nm at room temperature under optical pumping. Threshold energy density and emission linewidth were 189 mJ/cm(2) and 0.15 nm, respectively. The result demonstrates that blue-green VCSELs can be realised using III-nitride semiconductors.

Ultrafast dynamics of four-state magnetization reversal in (Ga,Mn)As

The ultrafast dynamics of in-plane four-state magnetization reversal from compressively strained (Ga,Mn)As film was investigated by magneto-optical Kerr rotation measurement. The magnetization reversal signal was dramatically suppressed upon pumping, and recovered slowly with time evolution. The low switching field H-c1 increased abruptly from 30 to 108 G on the first several picoseconds and recovered back to the value before optical pumping within about 500 ps, whereas the high switching field H-c2 did not change obviously upon pumping, implying a domain-wall nucleation/propagation at low fields and coherent magnetization rotation at high fields in the magnetization reversal process.

Blue-violet Lasing of Optically Pumped GaN-Based Vertical Cavity Surface-Emitting Laser With Dielectric Distributed Bragg Reflectors

Optically pumped GaN-based vertical cavity surface-emitting laser (VCSEL) with two Ta2O5/SiO2 dielectric distributed Bragg reflectors (DBRs) was fabricated via a simplifled procedure direct deposition of the top DBR onto the GaN surface exposed after substrate removal and no use of etching and polishing processes. Blue-violet lasing action was observed at a wavelength of 397.3 ran under optical pumping at room temperature with a threshold pumping energy density of about 71.5 mJ/cm(2). The laser action was further confirmed by a narrow emission linewidth of 0.13 nm and a degree of polarization of about 65%. The result suggests that practical blue-violet GaN-bsaed VCSEL can be realized by optimizing the laser lift-off technique for substrate removal.

Antiphase state in passively Q-switched Yb : YAG microchip multimode lasers with a saturable absorber GaAs

We report on recent experimental results of the spontaneous antiphase dynamics that occurs in a laser-diode-pumped multimode passively Q-switched microchip Yb:YAG (where YAG is yttrium aluminum garnet) lasers with a saturable absorber GaAs. We observe that the pulse sequence of the first mode characterized by one, two, and three pulses as a group and all the modes display an antiphase state as the pumping ratio rises. We modify the multimode rate equations to account for nonlinear absorption due to GaAs in the presence of spatial hole burning. We perform numerical simulations based on the proposed rate equations and reproduce the observed antiphase state of two and three active modes.