A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs

A novel unselective regrowth buried heterostructure long-wavelength superluminescent diode （SLD） with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy （MOVPE）. At a 150mA injection current, the full width at half maximum of the emission spectrum of the SLD is about 72nm, ranging from 1602 to 1674nm. The emission spectrum is smooth and flat. The ripple of the spectrum is less than 0.3dB at any wavelength from 1550 to 1700nm. An output power of 4.3mW is obtained at a 200mA injection current under continuous-wave operation at room temperature. This device is suitable for the applications of light sources for gas detectors and L-band optical fiber communications.

A novel high sensitivity CE-PTHPT for optical fiber communication

Planar punch through heterojunction phototransistors with a novel emitter control electrode and ion- implanted isolation (CE-PTHPT) are investigated. The phototransistors have a working voltage of 3-10V and high sensitivity at low input power. The base of the transistor is completely depleted under operating condition. Base current is zero. The CE-PTHPT has an increased speed and a decreased noise. The novel CE-PTHPT has been fabricated in this paper. The optical gain of GaAlAs/GaAs CE-PTHPT for the incident light power 1.3 and 43nw with the wavelength of 0.8 mu m reached 1260 and 8108. The input noise current calculated is 5.46 x 10(-16) A/H-z(1/2). For polysilicon emitter CE-PTHPT, the optical gain is 3083 at the input power of 0.174 mu w. The optical gain of InGaAs/InP CE-PTHPT reaches 350 for an incident power of 0.3 mu w at the wavelength of 1.55 mu m. The CE-PTHPT detectors is promising as photo detectors for optical fiber communication system.

Asymmetric dark current in double barrier quantum well infrared photodetectors

Asymmetric dark current and photocurrent versus voltage characteristic in the Double Barrier Quantum Wells (DBQWs) photovoltaic infrared photodetector has been studied. A model based on asymmetric potential barriers was proposed. The asymmetric potential thick barrier, which due to the Si dopant segregation during growth makes a major contribution to the asymmetrical I-V characteristic, calculations based on our model agree well with experimental results. This work also confirms the potential use of this DBQWs for infrared photodetector with large responsivity and little dark current under negative bias.

Multiple quantum well self electro-optic effect devices for optoelectronic smart pixels

The investigations on GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays for optoelectronic smart pixels are reported. The hybrid integration of GaAs/AlGaAs multiple quantum well devices flip-chip bonding directly over 1 mu m silicon CMOS circuits are demonstrated. The GaAs/AlGaAs multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic characteristics of elements in SEED arrays. The 4x4 optoelectronic crossbar structure consisting of hybrid CMOS-SEED smart pixels have been designed, which could be potentially used in optical interconnects for multiple processors.

Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors

The dark current characteristics and temperature dependence for quantum dot infrared photodetectors have been investigated by comparing the dark current activation energies between two samples with identical structure of the dots-in-well in nanoscale but different microscale n-i-n environments. A sequential coupling transport mechanism for the dark current between the nanoscale and the microscale processes is proposed. The dark current is determined by the additive mode of two activation energies: E-a,E-micro from the built-in potential in the microscale and E-a,E-nano related to the thermally assisted tunneling in nanoscale. The activation energies E-a,E-micro and E-a,E-nano decrease exponentially and linearly with increasing applied electric field, respectively.

Experimental study of Electro-elasto-capillarity:Electric field driven unwrapping of water drop with elastic film

<正>Elasto-capillarity has drawn much of scientists' attention in the past several years.By inducing electric field into the droplet,the encapsulation and release procedure can be realized and we call it electro-elasto-capillarity(EEC).EEC offers a novel method for micro-scale actuation and self-assemble of moveable devices.It also provides a good candidate for the drug delivery at micro- or nanoscale.

复杂微通道中的液滴控制(英文)

<正>The problem of controlling the droplet motions in multiphase flows on the microscale has gained increasing attention.It is critical to understand the relevant physics on droplet hydrodynamics and thus control the generation,motion,splitting,and coalescence of droplets in

Multi-strip MRPCs for FOPI

During the last years FOPI has developed a new ToF system as an upgrade of the existing detector based on Multi-strip Multi-gap Resistive Plate Chambers (MMRPCs). The intention is to increase the charged Kaon identification up to a laboratory momentum of 1 GeV/c and to enhance the azimuthal detector granularity. The new ToF barrel has an active area of 5 m(2) with 2400 individual strips (900 x 1.6 mm(2)) [A. Schuttauf, et al., Nucl. Phys. B 158 (2006) 52] which are read out on both sides by a custom designed electronics [M. Ciobanu, et al., IEEE Trans. Nucl. Sci. NS-54 (4) (2007) 1201; K. Koch, et al., IEEE Trans. Nucl. Sci. NS-52(3) (2005) 745]. To reach the envisaged goal a time resolution of 100 ps is needed, at a flight path of 1-1.3 m. Due to the rare production of the K- at SIS energies the efficiency of the MMRPCs has to be above 95%. We report on measurements with the detectors and electronics from the mass production line. For this purpose we used a proton beam at 2.0 and 1.25 GeV, at rates between 0.1 and 5 kHz/cm(2) to determine the timing, efficiency and rate capability of the MMRPCs