188 resultados para Real-coded GA


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We have systematically studied the temperature dependent photoluminescence of a self-assembled In(Ga)As/GaAs quantum dot (QD) system with different areal densities from similar to 10(9) to similar to 10(11) cm(-2). Different carrier channels are revealed experimentally and confirmed theoretically via a modified carrier equation model considering a new carrier transfer channel, i.e. continuum states ( CS). The wetting layer is demonstrated to be the carrier quenching channel for the low-density QDs but the carrier transfer channel for the high-density QDs. In particular, for the InGaAs/GaAs QDs with a medium density of similar to 10(10) cm(-2), the CS is verified to be an additional carrier transfer channel in the low temperature regime of 10-60 K, which is studied in detail via our models. The possible carrier channels that act on different temperature regimes are further discussed, and it is demonstrated that density is not a crucial factor in determining the carrier lateral coupling strength.

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An important concept proposed in the early stage of robot path planning field is the shrinking of the robot to a point and meanwhile expanding of the obstacles in the workspace as a set of new obstacles. The resulting grown obstacles are called the Configuration Space (Cspace) obstacles. The find-path problem is then transformed into that of finding a collision free path for a point robot among the Cspace obstacles. However, the research experiences obtained so far have shown that the calculation of the Cspace obstacles is very hard work when the following situations occur: 1. both the robot and obstacles are not polygons and 2. the robot is allowed to rotate. This situation is even worse when the robot and obstacles are three dimensional (3D) objects with various shapes. Obviously a direct path planning approach without the calculation of the Cspace obstacles is strongly needed. This paper presents such a new real-time robot path planning approach which, to the best of our knowledge, is the first one in the robotic community. The fundamental ideas are the utilization of inequality and optimization technique. Simulation results have been presented to show its merits.

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结构性测试是标识测试用例的基本方法之一.由于程序语言的复杂性以及被测程序的多样性,自动生成结构测试数据的一种有效方法是根据程序运行结果指导生成过程,通过不断迭代,生成符合要求的测试数据集.提出一种基于Messy GA的结构测试数据自动生成方法,将测试覆盖率表示为测试输入集X的函数F(X),并利用Messy GA不需要染色体模式排列的先验知识即可进行优化求解的性质对F(X)的进行迭代寻优,进一步提高了搜索的并行性,并最终提高测试覆盖率.对一组标准测试程序和若干实际应用程序的实验结果表明,较之现有基于遗传算法的生成方法,该方法能够以更高的效率生成更高质量的测试数据,并适用于较大规模的程序.

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实时数据库的结构化查询语言RTSQL(Real-Time SQL)是实时数据库研究的一项重要内容.论文详细论述了RTSQL的一种设计方法,即扩展SQL92标准以支持实时数据库的要求,构建RTSQL语言的方法.文章还介绍了RTSQL在Agilor实时数据库系统中的实现方式.在文章最后给出了RTSQL进一步研究的思路和建议。

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Based on the data processing technologies of interferential spectrometer, a sort of real-time data processing system on chip of interferential imaging spectrometer was studied based on large capacitance and high speed field programmable gate array( FPGA) device. The system integrates both interferograrn sampling and spectrum rebuilding on a single chip of FPGA and makes them being accomplished in real-time with advantages such as small cubage, fast speed and high reliability. It establishes a good technical foundation in the applications of imaging spectrometer on target detection and recognition in real-time.

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Real-time detection of single electron tunneling through a T-shaped double quantum dot is simulated, based on a Monte Carlo scheme. The double dot is embedded in a dissipative environment and the presence of electrons on the double dot is detected with a nearby quantum point contact. We demonstrate directly the bunching behavior in electron transport, which leads eventually to a super-Poissonian noise. Particularly, in the context of full counting statistics, we investigate the essential difference between the dephasing mechanisms induced by the quantum point contact detection and the coupling to the external phonon bath. A number of intriguing noise features associated with various transport mechanisms are revealed.

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A systematic investigation on the photoluminescence (PL) properties of InxGa1-xAs/AlyGa1-xAs (x = 0.15, y = 0, 0.33) strained quantum wells (SQWs) with well widths from 1.7 to 11.0 nm has been performed at 77 K under high pressure up to 40 kbar. The experimental results show that the pressure coefficients of the exciton peaks corresponding to transitions from the first conduction subband to the heavy-hole subband increase from 10.05 meV/kbar of 11.0 nm well to 10.62 meV/kbar of 1.8 nm well for In0.15Ga0.85As/GaAs SQWs. However, the corresponding pressure coefficients slightly decrease from 9.93 meV/kbar of 9.0 nm well to 9.73 meV/kbar of 1.7 nm well for In0.15Ga0.85As/Al0.33Ga0.67As SQWs. Calculations based on the Kronig-Penney model reveal that the increased or decreased barrier heights and the increased effective masses with pressure are the main reasons of the change in the pressure coefficients.