Enhanced infrared emission from colloidal HgTe nanocrystal quantum dots on silicon-on-insulator photonic crystals

A two dimensional silicon-on-insulator based photonic crystal structure is used to enhance the emission from colloidal HgTe nanocrystal quantum dots embedded in a thin polymer film. The enhancement is resonant to the leaky eigenmodes of the photonic crystals due to coherent scattering effects. Transmittance and photoluminescence experiments are presented to map the leaky mode dispersion and the angle dependence of the emission enhancement factor, which reaches values up to 80 (650) for vertical (oblique) emission in the telecommunication wavelength range.

Inductively coupled plasma etching in fabrication of 2D InP-based photonic crystals

The authors developed an inductively coupled plasma etching process for the fabrication of hole-type photonic crystals in InP. The etching was performed at 70 degrees C using BCl3/Cl-2 chemistries. A high etch rate of 1.4 mu m/min was obtained for 200 nm diameter holes. The process also yields nearly cylindrical hole shape with a 10.8 aspect ratio and more than 85 degrees straightness of the smooth sidewall. Surface-emitting photonic crystal laser and edge emitting one were demonstrated in the experiments.

Decay lifetime and evolution of semiconductor quantum dots in photonic crystals

Spontaneous emission from GaAs/AlGaAs quantum dots (QDs) embedded in photonic crystals with a narrow photonic band gap is studied theoretically. The results show that the decay lifetime is very sensitive to the sizes of QDs, and both inhibited and accelerated emission can occur, which had been indicated in a previous experiment. The Weisskopf-Wigner approximation, good for atoms and molecules, may be incorrect for QDs. A damped Rabi oscillation of the excited state with the transition frequency outside the photonic band gap may appear, which is impossible for atoms and molecules. (c) 2008 Elsevier Ltd. All rights reserved.

Single-photon source in strong photon-atom interaction regime in quasiperiodic photonic crystals

The antibunching properties of the fluorescence from a two-level ideal system in a 12-fold quasiperiodic photonic crystal are investigated based on the calculated local density of states. We found that the antibunching phenomenon of the fluorescence from two-level ideal systems could be significantly changed by varying their positions, i.e., perfect antibunching and antibunching with damped Rabi oscillation phenomenon occurred in different positions and at different frequencies in photonic crystals as a result of the large differences in the local density of states. This study revealed that the multi-level coherence of fluorescence from a two-level ideal system could be manipulated by controlling the position of the two-level ideal system in photonic crystals and the emission frequency in the photonic band structure. Copyright (C) EPLA, 2008

Two-photon excited fluorescence from CdSe quantum dots on SiN photonic crystals

Two-photon excited fluorescence from CdSe quantum dots on a two-dimensional SiN photonic crystal surface is investigated by using a femtosecond laser. By using a photonic crystal, a 90-fold enhancement in the two-photon excited fluorescence in the vertical direction is achieved. This is the highest enhancement achieved so far in the two-photon excited fluorescence in the vertical direction. The mechanism of the enhancement for two-photon excited fluorescence from quantum dots on photonic crystals is analyzed.

Raman scattering of non-planar graphite: arched edges, polyhedral crystals, whiskers and cones

Planar graphite has been extensively studied by Raman scattering for years. A comparative Raman study of several different and less common non-planar graphitic materials is given here. New kinds of graphite whiskers and tubular graphite cones (synthetic and natural) have been introduced. Raman spectroscopy has been applied to the characterization of natural graphite crystal edge planes, an individual graphite whisker graphite polyhedral crystals and tubular graphite cones. Almost all of the observed Raman modes were assigned according to the selection rules and the double-resonance Raman mechanism. The polarization properties related to the structural features, the line shape of the first-order dispersive mode and its combination modes, the frequency variation of some modes in different carbon materials and other unique Raman spectral features are discussed here in detail.

Growth of CeO2 : Bi12SiO20 crystals in multi-position furnace(II) - Space growth experiment

Ce-doped Bi12SiO20 single crystal with size of phi10mm x 40mm was successfully grown in space on board of the spacecraft Shenzhou No.3. The surface morphology of space-grown crystal is different from that of ground-grown crystal The space- and ground-grown crystals were measured by X-ray rocking curves, absorption spectra and micro-Raman spectra. The results show that the quality of Ce-deped crystal grown in space is better than that of the ground-grown one. The effect of doping on optical properties of BSO grown in space is evident in comparison with the ground-grown crystal.

Study on the perfection of in situ P-injection synthesis LEC-InP single crystals

Undoped, S-doped and Fe-doped InP crystals with diameter up to 4-inch have been pulled in drop 10 0 drop -direction under P-rich condition by a rapid P-injection in situ synthesis liquid encapsulated Czochralski (LEC) method. High speed photoluminescence mapping, etch-pit density (EPD) mapping and scanning electron microscopy have been used to characterize the samples of the single crystal ingots. Dislocations and electrical homogeneity of these samples are investigated and compared. By controlling the thermal field and the solid-liquid interface shape, 4-inch low-EPD InP single crystals have been successfully grown by the rapid P-injection synthesis LEC method. The EPD across the wafer of the ingots is less than 5 x 10(4) cm(-2). Cluster defects with a pore center are observed in the P-rich LEC grown InP ingots. These defects are distributed irregularly on a wafer and are surrounded by a high concentration of dislocations. The uniformity of the PL intensity across the wafer is influenced by these defects. (C) 2004 Elsevier B.V. All rights reserved.

Photonic band structures of two-dimensional photonic crystals with deformed lattices

Using the plane-wave expansion method, we have calculated and analysed the changes of photonic band structures arising from two kinds of deformed lattices, including the stretching and shrinking of lattices. The square lattice with square air holes and the triangular lattice with circular air holes are both studied. Calculated results show that the change of lattice size in some special ranges can enlarge the band gap, which depends strongly on the filling factor of air holes in photonic crystals; and besides, the asymmetric band edges will appear with the broken symmetry of lattices.

Characteristics of band structures in 1D photonic crystals containing alternate left-right handed materials

This work investigated analytically the band structure of photonic crystals (PCs) with alternate layers of left and right-handed materials in one-dimension. It was found that, under certain conditions, new peculiar band structures not seen in all right-handed material PCs appeared. We transformed the analytic dispersion relation into two cosine terms, and obtained an interesting band structure using the new form of dispersion equation. Conditions for obtaining such peculiar band structure were given. (c) 2005 Elsevier Ltd. All rights reserved.

Lowered laser threshold in photonic crystals investigated by semiclassical theory

Using the response formula of the photonic crystals and the Bloch equations, the lasing threshold in arbitrary 2D photonic crystals was obtained by an investigation of steady-state laser behavior. The lasing threshold is expressed by the population inversion. It shows that the population inversion threshold is proportional to the second order of the group velocity, and to the relaxation coefficient. (c) 2004 Elsevier B.V. All rights reserved.

Resonant cavity based compact efficient antireflection structures for photonic crystals

We propose an effective admittance ( EA) method to design antireflection structures for two-dimensional photonic crystals (PCs). We demonstrate that a compact and efficient antireflection structure, which is difficult to obtain by the conventional admittance matching method, can be readily designed by the EA method. The antireflection structure consists of an air slot resonant cavity that is constructed only with the materials that constitute the PC. Compared with a bare PC, the reflection from a PC with an antireflection structure is reduced by two orders of magnitude over a wide bandwidth. To confirm the presented EA method, finite-difference time-domain (FDTD) simulations are performed, and the results from the FDTD and the EA method are in good agreement.

Fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam method

In this paper, we introduced the fabrication of photonic crystals on several kinds of semiconductor materials by using focused-ion beam machine, it shows that the method of focused-ion beam can fabricate two-dimensional photonic crystal and photonic crystal device efficiently, and the quality of the fabricated photonic crystal is high. Using the focused-ion beam method, we fabricate photonic crystal wavelength division multiplexer, and its characteristics are analyzed. (c) 2007 Elsevier B.V. All rights reserved.

Enhancement of stimulated emission in 12-fold symmetric quasi-crystals

In this paper, we investigate the stimulated emission in a 12-fold symmetric quasiperiodic photonic crystal. The stimulated emission peaks in the quasiperiodic photonic crystal are more abundant and stronger than those in a periodic crystal. Also, more stimulated emission peaks appear as the crystal size and the gain increase, and some frequencies of the peaks are independent of the incident direction. These phenomena may be due to wave localization in the quasiperiodic photonic crystal.

Spontaneous emission lifetime distribution of infinite line antennas in two-dimensional photonic crystals with finite size

The authors calculate the lifetime distribution functions of spontaneous emission from infinite line antennas embedded in two-dimensional disordered photonic crystals with finite size. The calculations indicate the coexistence of both accelerated and inhibited decay processes in disordered photonic crystals with finite size. The decay behavior of the spontaneous emission from infinite line antennas changes significantly by varying factors such as the line antennas' positions in the disordered photonic crystal, the shape of the crystal, the filling fraction, and the dielectric constant. Moreover, the authors analyze the effect of the degree of disorder on spontaneous emission. (c) 2007 American Institute of Physics.