234 resultados para MECHANICAL ALLOYING


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The technology of laser quenching is widely used to improve the surface properties of steels in surface engineering. Generally, laser quenching of steels can lead to two important results. One is the generation of residual stress in the surface layer. In general, the residual stress varies from the surface to the interior along the quenched track depth direction, and the residual stress variation is termed as residual stress gradient effect in this work. The other is the change of mechanical properties of the surface layer, such as the increases of the micro-hardness, resulting from the changes of the microstructure of the surface layer. In this work, a mechanical model of a laser-quenched specimen with a crack in the middle of the quenched layer is developed to quantify the effect of residual stress gradient and the average micro-hardness over the crack length on crack tip opening displacement (CTOD). It is assumed that the crack in the middle of the quenched layer is created after laser quenching, and the crack can be a pre-crack or a defect due to some reasons, such as a void, cavity or a micro-crack. Based on the elastic-plastic fracture mechanics theory and using the relationship between the micro-hardness and yield strength, a concise analytical solution, which can be used to quantify the effect of residual stress gradient and the average micro-hardness over the crack length resulting from laser quenching on CTOD, is obtained. The concise analytical solution obtained in this work, cannot only be used as a means to predict the crack driving force in terms of the CTOD, but also serve as a baseline for further experimental investigation of the effect after laser-quenching treatment on fracture toughness in terms of the critical CTOD of a specimen, accounting for the laser-quenching effect. A numerical example presented in this work shows that the CTOD of the quenched can be significantly decreased in comparison with that of the unquenched. (C) 2008 Elsevier B.V. All rights reserved.

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Specklegram in multimode fiber has successfully been used as a sensor for detecting mechanical disturbance. Speckles in a multimode pure silica grapefruit fiber are observed and compared to that of a step-index multimode fiber, showing different features between them. The sensitivities to external disturbance of two kinds of fiber were measured, based on single-multiple-single mode (SMS) fiber structure. Experimental results show that the grapefruit fiber shows higher sensitivity than does the step-index multimode fiber. The transmission spectrum of the grapefruit fiber was measured as well, showing some oscillation features that are significantly different from that of a step-index multimode fiber. The experiments may provide suggestions to understand the mechanisms of light propagation in grapefruit fibers. (D 2008 Optical Society of America.

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A simple and practical method for the study of polymer thermal and mechanical properties using a fiber Bragg grating (FBG) sensor is presented for the first time, in which the FBG is embedded in a typical epoxy polymer. By measuring the sensitivity change of the FBG sensor, changes of the thermal-mechanical properties of the polymer with temperature and pressure can be measured. The experimental results show that this technique is capable of providing continuous in-line monitoring such properties with high sensitivity during transformation between the glassy state and the rubbery state of a polymer within the temperature and pressure range of 20 to 180 C and 0 to 15 MPa. (c) 2007 Society of Photo-Optical Instrumentation Engineers.

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A simple and practical method for the study of polymer thermal and mechanical properties using a fiber Bragg grating (FBG) sensor is presented for the first time, in which the FBG is embedded in a typical epoxy polymer. By measuring the sensitivity change of the FBG sensor, changes of the thermal-mechanical properties of the polymer with temperature and pressure can be measured. The experimental results show that this technique is capable of providing continuous in-line monitoring such properties with high sensitivity during transformation between the glassy state and the rubbery state of a polymer within the temperature and pressure range of 20 to 180 C and 0 to 15 MPa. (c) 2007 Society of Photo-Optical Instrumentation Engineers.

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(100 - x)TeO2 - xNb(2)O(5) (x=5-20) mobic tellurite glasses doped with 0.5 mol.% Er2O3 were synthesized, and their thermal, mechanical, and spectroscopic properties were measured and compared to the properties of the typical 75TeO(2)-20ZnO-5Na(2)O (TZN) tellurite glass. The refractive index (n(d)), density (p), and glass transition temperature (T-g) of bulk glasses increase with the Nb2O5 content. The Vickers microhardness (H-v) of bulk glass in niobic tellurite glasses also increases with the Nb2O5 content. The values (2.5-3.2 GPa) of H, in the niobic tellurite glasses are 47-88% larger than that (1.7 GPa) in TZN glass. The effect of Nb2O5 content on absorption spectra, the Judd-Ofelt parameters Omega(t) (t = 2, 4, 6), fluorescence spectra and the lifetimes of Er3+ :I-13/2 level were also investigated, and the stimulated emission crosssection was calculated from McCumber theory. With increasing Nb2O5 content in the glass composition, the Omega(t) (t = 2, 4, 6) parameters, fluorescence full width at half maximum (FWHM) Of I-13/2 of Er3+ increase, while the I-4(13/2) lifetimes of Er3+ decreases. Compared with TZN glass, the gain bandwidth properties of Er3+-doped TeO2-Nb2O5 glass is much larger than in tellurite glass based TeO2-ZnO-Na2O system, bismush-based glass, germanate, and silicate glasses, which indicates that TeO2-Nb2O5 glasses are better choice as a practical available host material for broadband Er3+-doped amplifier. (c) 2005 Elsevier B.V. All rights reserved.

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Zirconium dioxide (ZrO2) thin films were deposited on BK7 glass substrates by the electron beam evaporation method. A continuous wave CO2 laser was used to anneal the ZrO2 thin films to investigate whether beneficial changes could be produced. After annealing at different laser scanning speeds by CO2 laser, weak absorption of the coatings was measured by the surface thermal lensing (STL) technique, and then laser-induced damage threshold (LIDT) was also determined. It was found that the weak absorption decreased first, while the laser scanning speed is below some value, then increased. The LIDT of the ZrO2 coatings decreased greatly when the laser scanning speeds were below some value. A Nomarski microscope was employed to map the damage morphology, and it was found that the damage behavior was defect-initiated both for annealed and as-deposited samples. The influences of post-deposition CO2 laser annealing on the structural and mechanical properties of the films have also been investigated by X-ray diffraction and ZYGO interferometer. It was found that the microstructure of the ZrO2 films did not change. The residual stress in ZrO2 films showed a tendency from tensile to compressive after CO, laser annealing, and the variation quantity of the residual stress increased with decreasing laser scanning speed. The residual stress may be mitigated to some extent at proper treatment parameters. (c) 2007 Elsevier GmbH. All rights reserved.

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The initiation of laser damage within optical coatings can be better understood by thermal-mechanical modeling of coating defects. The result of this modeling shows that a high-temperature rise and thermal stress can be seen just inside the nodular defect compared to surrounding coating layers. The temperature rise and thermal stress tend to increase with seed diameter. Shallower seed tend to cause higher temperature rise and greater thermal stress. There is a critical seed depth at which thermal stress is largest. The composition of the seed resulting from different coating-material emission during evaporation can affect the temperature rise and thermal stress distribution.

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Molecular dynamics simulations with the Tersoff potential were used to study the response of twinned SiC nanowires under tensile and compressive strain. The critical strain of the twinned nanowires can be enhanced by twin stacking faults, and their critical strains are larger than those of perfect nanowires with the same diameters. Under axial tensile strain, the bonds of the nanowires are stretched just before failure. The failure behavior is found to depend on the twin segment thickness and the diameter of the nanowires. An atomic chain is observed for thin nanowires with small twin segment thickness under tension strain. Under axial compressive strain, the collapse of twinned SiC nanowires exhibits two different failure modes, depending on the length and diameter of the nanowires, i.e., shell buckling for short nanowires and columnar buckling for longer nanowires.

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The crystal structure, mechanical properties and electronic structure of ground state BeH2 are calculated employing the first-principles methods based on the density functional theory. Our calculated structural parameters at equilibrium volume are well consistent with experimental results. Elastic constants, which well obey the mechanical stability criteria, are firstly theoretically acquired. The bulk modulus B, Shear modulus G, Young's modulus E, and Poisson's ratio upsilon are deduced from the elastic constants. The bonding nature in BeH2 is fully interpreted by combining characteristics in band structure, density of states, and charge distribution. The ionicity in the Be-H bond is mainly featured by charge transfer from Be 2s to H 1s atomic orbitals while its covalency is dominated by the hybridization of H 1s and Be 2p states. The Bader analysis of BeH2 and MgH2 are performed to describe the ionic/covalent character quantitatively and we find that about 1.61 (1.6) electrons transfer from each Be (Mg) atom to H atoms.

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Using self-consistent calculations of million-atom Schrodinger-Poisson equations, we investigate the I-V characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors (MOSFET) based on a full 3-D quantum mechanical simulation under nonequilibtium condition. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. We find that the ballistic transport dominates the I-V characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8mA/mu m when the channel length of MOSFET scales down to 25 nm. The effects of tunnelling transport lower the threshold voltage V-t. The ballistic current based on fully 3-D quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of Luo et al.