牛耳草光合作用的脱水保护和复苏机理

本文以复苏植物牛耳草成熟植株的离体叶片为实验材料，以光合作用、蔗糖、抗氧化剂系统和离子渗漏等在脱水复苏过程中的变化为切入点，从生理生化水平上探讨其耐脱水复苏的机制;同时应用mRNA差异显示技术，从分子水平上探讨其耐脱水复苏的机制。 牛耳草叶片光系统II光化学活性参数和叶黄素循环色素在脱水复苏过程中的变化结果表明，极微弱光强（3μmol.m-2.s-1）下，脱水8天的牛耳草叶片诱导了叶黄素循环，叶黄素循环可能介导了牛耳草叶片脱水过程中的光保护作用。 利用不同浓度的磷酸盐溶液处理牛耳草叶片的结果表明，0.1mol/L以上的磷酸盐溶液对牛耳草叶片具有损伤作用，极大的影响了其光系统II的光化学活性，使得牛耳草叶片在脱水后不能很好的复苏。 牛耳草叶片在脱水复苏过程中，抗坏血酸（AsA）、还原型谷胱甘肽（GSH）和蔗糖含量在脱水时很快增加，复苏时又迅速恢复到原来水平，表明它们可能对脱水的牛耳草叶片具有保护作用，但对复苏的牛耳草叶片可能不重要;其离子渗漏情况表明质膜结构的完整性和稳定性在脱水复苏过程中能得到很好的保持，这可能是其耐脱水复苏的重要机制之一。 利用mRNA差异显示技术分离到牛耳草叶片脱水过程中一些脱水和磷酸盐特异诱导表达的cDNA。对其中5个脱水特异诱导表达和3个磷酸盐特异诱导表达的cDNA进行克隆测序、同源性探测和Northern 杂交检测表明，牛耳草脱水过程中诱导表达的基因可能涉及到脱水胁迫的信号转导、调节基因的级联和结构基因产物调节细胞结构在脱水胁迫中的稳定性等。

China, India, and the Environment

This work was supported by grants from the National Basic Research Program of China (973 Program, 2007CB411600), the National Natural Science Foundation of China (30621092, 30623007), and Bureau of Science and Technology of Yunnan Province.

Mitochondrial cytochrome b gene sequence diversity in the Korean hare, Lepus coreanus Thomas (Mammalia, Lagomorpha)

Partial sequences of the mitochondrial cytochrome b gene of the Korean hare (Lepus coreanus) were analyzed to determine the degree of genetic diversity. Nine haPlotyes were observed, and the maximum Tamura-Nei nucleotide distance among them was 2.8%, indicating that genetic diversity of L. coreanus is moderate. In order to clarify the Korean hare's taxonomic status and relationship with the Manchurian hare (L. mandshuricus) and the Chinese hare (L. sinensis), these nine haplotypes of the Korean hare were compared with 13 haplotypes from five other species of eastern Asian Lepus including L. mandshwicus and L. sinensis. The Korean hare was distinct in its cytochrome b gene, and it is confirmed that L. coreanus is a valid species, as noted by Jones and Johnson (1965, Univ. Kansas Publ. (Mus. Nat. Hist.) 16:357). Further analyses of mtDNA cytochrome b gene with additional specimens of L. coreanus from North Korea and other species of Lepus from eastern Asia are needed to clarify the taxonomic status of the divergent mtDNA clades of L. mandshuricus and L. sinensis.

滇池水华蓝藻中γ-亚麻酸的提取与含量分析

目的 :在控制水华蓝藻的同时 ,有效利用滇池富营养化水体的水华蓝藻。方法 :藻类资源。以从滇池中收集的水华蓝藻干粉为材料 ,对从水华蓝藻中γ -亚麻酸的含量进行了分析 ,对提取γ -亚麻酸的几个基本参数进行了研究。结果 :直接用萃取溶剂浸泡藻粉 ,并用超声波破碎细胞 ,可以简化操作且增加γ -亚麻酸得率 ;石油醚是比较合适的萃取溶剂 ;进行皂化反应时所用皂化液为 (KOH -CH3CH2 OH -H2 O) ,最适反应温度为 5 0 - 6 0℃ ,γ -亚麻酸酯在氮气保护下进行酸化可以防止游离出来的γ亚

Environmental threats to children's health in Southeast Asia and the Western Pacific

The Southeast Asia and Western Pacific regions contain half of the world's children and are among the most rapidly industrializing regions of the globe. Environmental threats to children's health are widespread and are multiplying as nations in the area undergo industrial development and pass through the epidemiologic transition. These environmental hazards range from traditional threats such as bacterial contamination of drinking water and wood smoke in poorly ventilated dwellings to more recently introduced chemical threats such as asbestos construction materials; arsenic in groundwater; methyl isocyanate in Bhopal, India; untreated manufacturing wastes released to landfills; chlorinated hydrocarbon and organophosphorous pesticides; and atmospheric lead emissions from the combustion of leaded gasoline. To address these problems, pediatricians, environmental health scientists, and public health workers throughout Southeast Asia and the Western Pacific have begun to build local and national research and prevention programs in children's environmental health. Successes have been achieved as a result of these efforts: A cost-effective system for producing safe drinking water at the village level has been devised in India; many nations have launched aggressive antismoking campaigns; and Thailand, the Philippines, India, and Pakistan have all begun to reduce their use of lead in gasoline, with resultant declines in children's blood lead levels. The International Conference on Environmental Threats to the Health of Children, held in Bangkok, Thailand, in March 2002, brought together more than 300 representatives from 35 countries and organizations to increase awareness on environmental health hazards affecting children in these regions and throughout the world. The conference, a direct result of the Environmental Threats to the Health of Children meeting held in Manila in April 2000, provided participants with the latest scientific data on children's vulnerability to environmental hazards and models for future policy and public health discussions on ways to improve children's health. The Bangkok Statement, a pledge resulting from the conference proceedings, is an important first step in creating a global alliance committed to developing active and innovative national and international networks to promote and protect children's environmental health.

Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

Thick nonpolar (10 (1) over bar0) GaN layers were grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) using magnetron sputtered ZnO buffers, while semipolar (10 (1) over bar(3) over bar) GaN layers were obtained by the conventional two-step growth method using the same substrate. The in-plane anisotropic structural characteristics and stress distribution of the epilayers were revealed by high. resolution X-ray diffraction and polarized Raman scattering measurements. Atomic force microscopy (AFM) images revealed that the striated surface morphologies correlated with the basal plane stacking faults for both (10 (1) over bar0) and (10 (1) over bar(3) over bar) GaN films. The m-plane GaN surface showed many triangular-shaped pits aligning uniformly with the tips pointing to the c-axis after etching in boiled KOH, whereas the oblique hillocks appeared on the semipolar epilayers. In addition, the dominant emission at 3.42eV in m-plane GaN films displayed a red shift with respect to that in semipolar epilayers, maybe owing to the different strain states present in the two epitaxial layers. [DOI: 10.1143/JJAP.47.3346]

Paired interference 3-dB coupler based on SOI rib waveguides with anisotropic chemical wet etching

A 3-dB paired interference (PI) optical coupler in silicon-on-insulator (SOI) based on rib waveguides with trapezoidal cross section was designed with simulation by a modified finite-difference beam propagation method (FD-BPM) and fabricated by potassium hydroxide (KOH) anisotropic chemical wet etching. Theoretically, tolerances of width, length, and port distance are more than 1, 100, and 1 mu m, respectively. Smooth interface was obtained with the propagation loss of 1.1 dB/cm at the wavelength of 1.55 mu m. The coupler has a good uniformity of 0.2 dB and low excess loss of less than 2 dB.

Multimode interference 3-dB coupler in silicon-on-insulator based on silicon rib waveguides with trapezoidal cross section

A 3-dB multimode interference optical coupler based on rib waveguides with trapezoidal cross section was designed and fabricated on silicon-on-insulator wafer. Potassium hydroxide (KOH) anisotropic chemical etching of silicon was used to fabricate the waveguides to obtain smooth interface. A modified finite-difference beam propagation method was used to simulate the multimode rib waveguide with slope interfaces. The rms roughness of etching interface is as small as 1.49 nm. The propagation loss of the waveguide is 1.3 dB/cm at wavelength of 1.55 mum. The fabricated 3-dB coupler has a good uniformity of 0.2 dB.

Design and fabrication of compact nonblocking 4X4 optical matrix switch on silicon-on-insulator by anisotropic chemical etching

A folding nonblocking 4 X 4 optical matrix switch in simplified-tree architecture was designed and fabricated on a silicon-on-insulator wafer. To compress chip size, switch elements (SEs) were connected by total internal reflection mirrors instead of conventional S-bends. For obtaining smooth interfaces, potassium hydroxide (KOH) anisotropic chemical etching of silicon was employed. The device has a compact size of 20 X 3.2 mm(2) and a fast response of 8 +/- 1 mu s. Power consumption of 2 x 2 SE and excess loss per mirror were 145 mW and -1.1 dB, respectively. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

A base-emitter self-aligned multi-finger Si1-xGex/Si power heterojunction bipolar transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-aligned large-area multi-linger configuration power SiGe heterojunction bipolar transistor (HBT) device (with an emitter area of about 880 mu m(2)) is fabricated with 2 mu m double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVCEO is 10 V and the collector-base junction breakdown voltage BVCBO is 16 V with collector doping concentration of 1 x 10(17) cm(-3) and thickness of 400 nm. The device exhibited a maximum oscillation frequency f(max) of 35.5 GHz and a cut-off frequency f(T) of 24.9 GHz at a dc bias point of I-C = 70 mA and the voltage between collector and emitter is V-CE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from 0 dBm to 21 dBm. A maximum output power of 29.9 dBm (about 977 mW) is obtained at an input power of 18.5 dBm with a gain of 11.47 dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, f(max) and f(T) are improved by about 83.9% and 38.3%, respectively.

Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer

We report on stacking fault (SF) detection in free-standing cubic-SiC epilayer by the Raman measurements. The epilayer with enhanced SFs is heteroepitaxially grown by low pressure chemical vapour deposition on a Si(100) substrate and is released in KOH solution by micromechanical manufacture, on which the Raman measurements are performed in a back scattering geometry. The TO line of the Raman spectra is considerably broadened and distorted. We discuss the influence of SFs on the intensity profiles of TO mode by comparing our experimental data with the simulated results based on the Raman bond polarizability (BP) model in the framework of linear-chain concept. Good agreement with respect to the linewidth and disorder-induced peak shift is found by assuming the mean distance of the SFs to be 11 angstrom in the BP model.

Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).

Structural properties of SI-GaAs grown in space

The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. The quality of the crystal was first evaluated by x-ray rocking-curve method. The full width at half maximum of x-ray rocking curve in space-grown SI-GaAs is 9.4+/-0.08 are seconds. The average density of dislocations revealed by molten KOH is 2.0 X 10(4) cm(-2), and the highest density is 3.1 X 10(4) cm(-2). The stoichiometry in the single crystal grown in space is improved as well. Unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (C) 1999 COSPAR. Published by Elsevier Science Ltd.

Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes

The photovoltaic spectral features and the behaviors of photocurrent versus the electrode potential for near surface In0.15Ga0.85As/GaAs quantum well electrodes have been investigated in nonaqueous solutions of ferrocene and acetylferrocene. The photovoltaic spectrum shows a sharp structure that reflects confined state-to-state exciton transition in the quantum well. Deep dips are observed in the photocurrent versus the electrode potential curves in both electrolytes at the different electrode potentials under the illumination of exciton resonance wavelength. These dips are qualitatively explained by considering the interfacial tunneling transfer of photogenerated electron within the quantum well.

Improvement of stoichiometry in semi-insulating gallium arsenide grown under microgravity

A semi-insulating (SI) GaAs single crystal was recently grown in a retrievable satellite. The average etch pit density (EPD) of dislocations in the crystal revealed by molten KOH is 2.0 x 10(4) cm(-2), and the highest EPD is 3.1 x 10(4) cm(-2) This result indicates a quite good homogenity of the EPD which is much better than the ground-grown crystals. A similar better homogenity of the stoichiometry i.e., the [As]/([As] + [Ga]) ratio has been found in the space-grown SI-GaAs single crystal studied nondestructively using a new mapping method based upon X-ray Bond diffraction. The average stoichiometry in the space-grown crystal is 0.50007 with mean-square deviation of 6x10(-6), while the average stoichiometry in ground-grown SI-GaAs crystal is more than 0.50010. (C) 1998 Elsevier Science B.V. All rights reserved.