253 resultados para GaAs single crystal
Resumo:
Using the Bridgeman-Stockbarger method, the KMgF3:EU2+ single crystal was grown. The color centers in unirradiated KMgF3:Eu crystal were studied. By thermal annealing, we confirmed the 422-nm emission resulted from color centers and oxygen centers, and we proved the energy transfer from EU2+ to color centers. From spectra, the relative oxygen content in crystal was calculated, and the relationships of oxygen displacing fluorine were studied.
Resumo:
The rational synthesis and the structural and magnetic characterization of a nickel cluster are presented. The compound comprises a rhomblike Ni4O16 group encapsulated between two-heptadentate tungstoarsenate ligands [AsW9O34](9-). The crystal structure of K-10[Ni-4(H2O)(2)(AsW9O34)(2)](.)4H(2)O was solved in monoclinic, P2(1)/n symmetry, with a = 12.258(3) Angstrom, b = 21.232(4) Angstrom, c = 15.837(3) Angstrom, beta = 92.05(3)degrees, V = 4119.1(14) Angstrom(3), Z = 2, and R = 0.0862. The crystal structure of the Ni(II) derivative was compared with that of the Cu(II), Zn(II), Co(II) and Mn(II) derivatives. The Ni4O14(H2O)(2) unit in the compound shows no Jahn-Teller distortion. On the other hand, the Ni(II) derivative shows ferromagnetic exchange interactions within the Ni4O16 group (J = 7.8 cm(-1), J' = 13.7 cm(-1)) and an S = 4 ground state, the highest spin state reported in a heteropoly complex. Its redox electrochemistry has been studied in acid buffer solutions using cyclic voltammetry. It exhibited two steps of one-electron redox waves attributed to redox processes of the tungsten-oxo framework. The new catalyst showed an electrocatalytic effect on the reduction of NO2-.
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The banded textures in the films of a thermotropic liquid crystalline poly(aryl ether ketone) containing a lateral chloro group have been studied by means of transmission electron microscopy(TEM), electron diffraction(ED) and atomic force microscopy (AFM). The crystallization-induced Landed texture without external shear can be formed when the thin films were annealed at the temperature range(320-330 degrees C) of the liquid crystalline state from the melt, The results show that the banded regions have high orientation of single crystal based on the orthorhombic packing and the growing direction of the Lands is along the b axis of the crystals, This kind of single crystal-like bands is due to the different orientation of the packing molecular chains, The molecular chains of the dark bands in the bright field electron micrograph are perpendicular to the film plane, while the ones of the bright Lands are tilt along the b axis with the tilt angle upto +/-20 degrees.
Resumo:
Self-organization of BaF2 single crystal film under a compressed monolayer of behenic acid (BA) has been investigated by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The experimental results indicated the (100)-oriented single crystal film of BaF2 was formed under the BA monolayer. The relation between the BaF2 single crystal and the monolayer was discussed.
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A novel three-dimensional fluorinated gallium phosphate has been hydrothermally,synthesized by using diethylenetriamine as an organic structure-directing agent. X-ray single crystal structure analysis indicates this compound crystallizes in the orthorhombic space group P-bca, a = 1. 605 6 (7) nm, b = 1.011 4 (4) nm, c=1. 854 6(5) nm, V=3. 011 6(19) nm(3), Z=4. The three-dimensional framework based on linkage of corner-sharing polyhedron PO4, GaO4F and GaO4F2 delimit ten-ring channels along b axis in which the triply protonated amines are located serving as charge compensating guests and supporters.
Resumo:
The structures of single crystals of syndiotactic poly(butene-1) in form I, produced by thin-film growth, are studied by transmission electron microscopy and electron diffraction. Bright-field electron microscopy observation shows that the single crystal exhibits a regular rectangular shape with the long axis along its crystallographic b-axis. Electron diffraction results indicate an isochiral C-centered packing of a-fold helical chains in an orthorhombic unit cell corresponding to the C222(1) space group, according to the model proposed in the literature. The differences with the polymorphic behavior of syndiotactic polypropylene concerning the formation and the stability of the isochiral mode of packing are outlined.
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Single crystal of KZnF3 : Eu3+ has been grown by means of Bridgman-Stockbarger technique in Ar atmosphere, The emission and excitation spectra of europium ion were measured, The results show that a small amount of Eu2+ exists in the crystal, The existence of Eu2+ ions was also confirmed by ESR data, The valence change of Eu ions during the crystal growth is due to unequivalent substitution of Eu3+ ions for the lattice ions. The sites possibly occupied by Eu ions in this crystal were also discussed.
Resumo:
A highly ordered single crystal carbon material, highly oriented pyrolytic graphite (HOPG) has been successfully employed as a working electrode in an electrochemical quartz crystal microbalance study. RTV silicone rubber is selected to adhere the HOPG film onto the quartz crystal surface. Such modified quartz crystal can oscillate with stable frequency. The electrode modified in this way has good electrochemical properties.
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CaF_2 single crystal is very useful as optical host materials. It has been systematically studied and widely used in thermoluminescence that rare earth ions were doped into CaF_2 single crystal with chemical methods. However, the ion implan-
Resumo:
采用低雷诺数k-ε模型,计算分析了Cz法大型砷化镓单晶生长中熔体 内的热量、动量输支特性。结果表明:适当的坩埚旋转能有效抑制晶体旋转产生的对流和浮力对流,增长晶体转速能使晶体/熔体界面附近等温线更加平直,适当的坩埚、晶体转速匹配能够抑止晶体/熔体界面附近的温度波动,热毛细力对强烈熔体流动的影响可以忽略不计,但对较弱的熔体流动影响较大。文中还给出了较为适宜的坩埚、晶体转速匹配方式。研究结果为生长高质量大型砷化镓单晶提供了有重要价值的数值依据。
Resumo:
A semi-insulating (SI) GaAs single crystal was recently grown in a retrievable satellite. The average etch pit density (EPD) of dislocations in the crystal revealed by molten KOH is 2.0 x 10(4) cm(-2), and the highest EPD is 3.1 x 10(4) cm(-2) This result indicates a quite good homogenity of the EPD which is much better than the ground-grown crystals. A similar better homogenity of the stoichiometry i.e., the [As]/([As] + [Ga]) ratio has been found in the space-grown SI-GaAs single crystal studied nondestructively using a new mapping method based upon X-ray Bond diffraction. The average stoichiometry in the space-grown crystal is 0.50007 with mean-square deviation of 6x10(-6), while the average stoichiometry in ground-grown SI-GaAs crystal is more than 0.50010. (C) 1998 Elsevier Science B.V. All rights reserved.
Resumo:
A set of numerical analyses for momentum and heat transfer For a 3 in. (0.075 m) diameter Liquid Encapsulant Czochralski (LEC) growth of single-crystal GaAs with or without all axial magnetic field was carried Out using the finite-element method. The analyses assume a pseudosteady axisymmetric state with laminar floats. Convective and conductive heat transfers. radiative heat transfer between diffuse surfaces and the Navier-Stokes equations for both melt and encapsulant and electric current stream function equations Cor melt and crystal Lire considered together and solved simultaneously. The effect of the thickness of encapsulant. the imposed magnetic field strength as well as the rotation rate of crystal and crucible on the flow and heat transfer were investigated. (C) 2002 Published by Elsevier Science Ltd.
Resumo:
Long-wavelength high indium content InxGa1-xAs/GaAs single/multi quantum wells (QWs) structures have been successfully grown by molecular beam epitaxy. It is evidenced by X-ray measurements that the critical thickness of the well width of InxGa1-xAs/GaAs QWs with an indium content x of 47.5% can be raised up to 7nm without strain relation. 1.25μ m photoluminescence (PL) emission is obtained from the QWs with narrower full-width at half maximum (FWHM) less than 30meV. Our results are important basements which are useful for further fabricating GaAs-based long-wavelength devices. © 2005 Elsevier B.V. All rights reserved.
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The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.
Resumo:
A set of numerical analyses for momentum and heat transfer For a 3 in. (0.075 m) diameter Liquid Encapsulant Czochralski (LEC) growth of single-crystal GaAs with or without all axial magnetic field was carried Out using the finite-element method. The analyses assume a pseudosteady axisymmetric state with laminar floats. Convective and conductive heat transfers. radiative heat transfer between diffuse surfaces and the Navier-Stokes equations for both melt and encapsulant and electric current stream function equations Cor melt and crystal Lire considered together and solved simultaneously. The effect of the thickness of encapsulant. the imposed magnetic field strength as well as the rotation rate of crystal and crucible on the flow and heat transfer were investigated. (C) 2002 Published by Elsevier Science Ltd.