Energy budget of Nile tilapia (Oreochromis niloticus) in relation to ration size

Nile tilapia weighing 8.29-11.02 g were fed a practical diet at seven ration levels (starvation, 0.5, 1, 2, 3, 4% body weight per day and satiation) twice a day at 30 degrees C. Feed consumption, apparent digestibility, nitrogenous excretion and growth were determined directly, and heat production was calculated by difference of energy budget. The relationship between specific growth rate in wet weight (SGR(w), percentage per day) and ration size (RL, percentage per day) was a decelerating curve described as SGR(w) = 2.98 (1 - e(-0.61(RL-0.43))). The apparent digestibility coefficients for dry matter and protein showed a decreasing pattern with increasing ration while the apparent digestibility coefficient of energy was not significantly affected by ration size. The proportion of gross energy intake lost in nitrogenous excretion tended to decrease with increasing ration. Feed efficiency was highest, and the proportion of gross energy intake channelled to heat production was lowest, at an intermediate ration level (2% per day). The energy budget at the satiation level was: 100IE = 16.9FE + 1.2(ZE + UE) + 62.3HE + 19.6RE, where IE, FE, (ZE + UE), HE and RE represent gross energy intake, faecal energy, excretory (non-faecal) energy loss, heat production and recovered energy (growth), respectively. (C) 1997 Elsevier Science B.V.

Anisotropic exchange splitting of excitons in (001)GaAs/Al0.3Ga0.7As superlattice studied by reflectance difference spectroscopy

Anisotropic exchange splitting (AES) is induced by the joint effects of the electron-hole exchange interaction and the symmetry reduction in quantum wells and quantum dots. A model has been developed to quantitatively obtain the electron-hole exchange energy and the hole-mixing energy of quantum wells and superlattices. In this model, the AES and the degree of polarization can both be obtained from the reflectance difference spectroscopy. Thus the electron-hole exchange energy and the hole-mixing energy can be completely separated and quantitatively deduced. By using this model, a (001)5 nm GaAs/7 nm Al0.3Ga0.7As superlattice sample subjected to [110] uniaxial strains has been investigated in detail. The n=1 heavy-hole (1H1E) exciton can be analyzed by this model. We find that the AES of quantum wells can be linearly tuned by the [110] uniaxial strains. The small uniaxial strains can only influence the hole-mixing interaction of quantum wells, but have almost no contribution to the electron-hole exchange interaction. (c) 2008 American Institute of Physics.

Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands

The magnetic field dependence of filling factors has been investigated on InP based In-0.53 Ga0.47As/In-0.52 Al-0.48 As quantum well samples with two occupied subbands by means of magnetotransport measurements at the temperature of 1.5 K in a magnetic field range of 0 to 13 T. Under the condiction that Laundau-level broadening is larger than the spin splitting of each subband, filling factors are even when the splitting energy of two subbands is an integer multiple of the cyclotron energy, i. e. Delta E-21 = khw(c). If the splitting energy of two subbands is half of an odd interger multiple of the cyclotron erergy, i. e. Delta E-21 = (2 k + 1) hw(c) /2, the filling factor is odd.

Spin-orbit splitting of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells

The electronic states of a hydrogenic donor impurity in GaAs/GaAlAs quantum wells are investigated theoretically in the framework of effective-mass envelope function theory, including the effect of Rashba spin-orbit coupling. The splits of electron energy levels are calculated. The results show that (1) the split energy of the excited state is larger than that of the ground state; (2) the split energy peak appears as the GaAs well width increases from zero; and (3) the maximum split energy reaches about 1.6 meV. Our results are useful for the application of Rashba spin-orbit coupling to photoelectric devices. (c) 2008 American Institute of Physics.

Fine structural splitting and exciton spin relaxation in single InAs quantum dots

We have studied the exciton spin dynamics in single InAs quantum dots (QDs) with different exciton fine structural splitting (FSS) by transient luminescence measurements. We have established the correlation between exciton spin relaxation rate and the energy splitting of the FSS when FSS is nonzero and found that the spin relaxation rate in QD increases with a slope of 8.8x10(-4) ns(-1) mu eV(-1). Theoretical analyses based on the phonon-assisted relaxations via the deformation potential give a reasonable interpretation of the experimental results.

A new way of uniform splitting of the optical power by directional coupling between the photonic crystal waveguides

Directional coupler can be constructed by putting multiple photonic crystal waveguides together. The propagation of the optical field entering this system symmetrically was analysed numerically according to self-imaging principle. On the basis of this structure, ultracompact multiway beam splitter was designed and the ones with three and four output channels were discussed in details as examples. By simply tuning the effective refractive index of two dielectric rods in the coupler symmetrically to induce the redistribution of the power of the optical field, uniform or free splitting can be achieved. Compared with the reported results, this way is simpler, more feasible and more efficient and has extensive practical value in future photonic integrated circuits.

Investigation of Electronic Energy Levels in InAs Quantum Dot with Shape of Lens by Using B-Spline Technique

The dependence of the electronic energy levels on the size of quantum dots (QDs) with the shape of spherical lens is studied by using the B-spline technique for the first time. Within the framework of the effective-mass theory, the values of electronic energy levels are obtained as a function of the height, radius and volume of QDs, respectively. When the height or radius of QDs increases, all the electronic energy levels lower, and the separations between the energy levels decrease. For lens-shape QDs, height is the key factor in dominating the energy levels comparing with the effect of radius, especially in dominating the ground-state level. These computational results are compared with that of other theoretical calculation ways. The B-spline technique is proved to be an effective way in calculating the electronic structure in QDs with the shape of spherical lens.

Anisotropic Zeeman splitting and Stark shift of In1-yMnyAs1-xNx oblate quantum dots

The electronic structure, Zeeman splitting, and Stark shift of In1-yMnyAs1-xNx oblate quantum dots are studied using the ten-band k center dot p model including the sp-d exchange interaction between the carriers and the magnetic ion. The Zeeman splitting of the electron ground states is almost isotropic. The Zeeman splitting of the hole ground states is highly anisotropic, with an anisotropy factor of 918 at B=0.1 T. The Zeeman splittings of some of the electron and hole excited states are also highly anisotropic. It is because of the spin-orbit coupling which couples the spin states with the anisotropic space-wave functions due to the anisotropic shape. It is found that when the magnetic quantum number of total orbital angular momentum is nearly zero, the spin states couple with the space-wave functions very little, and the Zeeman splitting is isotropic. Conversely, if the magnetic quantum number of total orbital angular momentum is not zero, the space-wave functions in the degenerate states are different, and the Zeeman splitting is highly anisotropic. The electron and hole Stark shifts of oblate quantum dots are also highly anisotropic. The decrease of band gap with increasing nitrogen composition is much more obvious in the smaller radius case because the lowest conduction level is increased by the quantum confinement effect and is closer to the nitrogen level. (C) 2007 American Institute of Physics.

Exciton spin splitting in ultrathin InAs layers

Unique spin splitting behaviors in ultrathin InAs layers, which show very different spin splitting characteristics between the InAs monolayer (ML) and submonolayer (SML) have been observed. While distinct spin splitting is observed in an InAs ML, no visible spin splitting is found in a 1/3 ML InAs SML. In addition, the spin relaxation time in the 1/3 ML InAs is found to be much longer than that in the 1 ML sample. These results are in good agreement with the theoretical prediction that the interexcitonic exchange interaction plays a dominant role in energy splitting, while the intraexciton exchange interaction controls the spin relaxation. (c) 2007 American Institute of Physics.

Giant Zeeman splitting in manganese-doped ZnSe quantum spheres: Eight-band effective-mass calculations

We deduce the eight-band effective-mass Hamiltonian model for a manganese-doped ZnSe quantum sphere in the presence of the magnetic field, including the interaction between the conduction and valence bands, the spin-orbit coupling within the valence bands, the intrinsic spin Zeeman splitting, and the sp-d exchange interaction between the carriers and magnetic ion in the mean-field approximation. The size dependence of the electron and hole energy levels as well as the giant Zeeman splitting energies are studied theoretically. We find that the hole giant Zeeman splitting energies decrease with the increasing radius, smaller than that in the bulk material, and are different for different J(z) states, which are caused by the quantum confinement effect. Because the quantum sphere restrains the excited Landau states and exciton states, in the experiments we can observe directly the Zeeman splitting of basic states. At low magnetic field, the total Zeeman splitting energy increases linearly with the increasing magnetic field and saturates at modest field which is in agreement with recent experimental results. Comparing to the undoped case, the Zeeman splitting energy is 445 times larger which provides us with wide freedom to tailor the electronic structure of DMS nanocrystals for technological applications.

Deep level and photoluminescence studies of Er-implanted GaN films

Deep level transient spectroscopy measurements were performed on the metal organic chemical vapor deposition epitaxially grown GaN before and after the implantation with Er. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. But four defect levels located at 0.300, 0.188, 0.600 and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees for 30 min. The origins of the deep defect levels were discussed. The photoluminescence (PL) properties of Er-implanted GaN thin films were also studied. After annealing at 900 degrees for 30 min in a nitrogen flow, Er-related 1.54 mu m luminescence peaks could be observed for the Er-implanted GaN sample. Moreover, the energy-transfer and recombination processes of the Er-implanted GaN film were described. (c) 2006 Elsevier B.V. All rights reserved.

Electronic states in InAs quantum spheres and ellipsoids

The eight-band effective-mass Hamiltonian of the free-standing narrow-gap InAs quantum ellipsoids is developed, and the electron and hole electronic structures as well as optical properties are calculated by using the model. The energies, wave functions and transition probabilities of quantum spheres as functions of the radius of quantum sphere R is presented. It is found that the energy levels do not vary as 1/R-2, which is caused by the coupling between the conduction and valence bands, and by the constant terms correspond to the spin-orbit splitting energy. The blueshifts of hole states depend strongly on the coupling from electron states, so that the order of hole states changes as has been predicted in experiment. The exciton binding energies are calculated, the calculated excitonic gaps as functions of the ground exciton transition energy are in good agreement with the photoluminescence measured spectra in details. Finally, the hole energy levels and the linear polarization factors in InAs quantum ellipsoids as functions of the aspect ratio are presented. The state 1S(Z up arrow)((1/2)) becomes the hole ground state when e is larger than 2.4. The saturation value of the linear polarization factors of the InAs long ellipsoids of diameter 2.0 nm is 0.86, in agreement with the experimental results.

Deep level transient spectroscopy studies of Er and Pr implanted GaN films

Deep level transient spectroscopy measurements were used to characterize the electrical properties of metal organic chemical vapor deposition grown undoped, Er-implanted and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. But four defect levels located at 0.300 eV, 0.188 eV, 0.600 eV and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees C for 30 min, and four defect levels located at 0.280 eV, 0.190 eV, 0.610 eV and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 degrees C for 30min. The origins of the deep defect levels are discussed. After annealing at 900 degrees C for 30min in a nitrogen flow, Er-related 1538nm luminescence peaks could be observed for the Er-implanted GaN sample. The energy-transfer and luminescence mechanism of the Er-implanted GaN film are described.

Electronic structure of coupled vertically stacked self-assembled InAs quantum disks in a vertical electric field

In the framework of the effective-mass and adiabatic approximations, by setting the effective-mass of electron in the quantum disks (QDs) different from that in the potential barrier material, we make some improvements in the calculation of the electronic energy levels of vertically stacked self-assembled InAs QD. Comparing with the results when an empirical value was adopted as the effective-mass of electron of the system, we can see that the higher levels become heightened. Furthermore, the Stark shifts of the system of different methods are compared. The Stark shifts of holes are also studied. The vertical electric field changes the splitting between the symmetric level and the antisymmetric one for the same angular momentum. (C) 2003 Elsevier Ltd. All rights reserved.

Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity

A microcavity structure, containing self-assembled InGaAs quantum dots, is studied by angle-resolved photoluminescence (PL) spectroscopy. A doublet with the splitting energy of 0.5-1.5 nm appears when the detection angle is larger than 35degrees. This doublet is identified as mode splitting (not the Rabi splitting) by polarization measurements. We find that it is the considerable deviation of the cavity-mode frequency from the central frequency of the stop band that makes the TE and TM cavity modes split more discernibly. The inhomogeneous broadening of quantum dots gives the TE and TM cavity modes a chance to show up simultaneously in the PL spectra. (C) 2003 American Institute of Physics.