Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands


Autoria(s): Shang, LY; Lin, T; Zhou, WZ; Guo, SL; Li, DL; Gao, HL; Cui, LJ; Zeng, YP; Chu, JH
Data(s)

2008

Resumo

The magnetic field dependence of filling factors has been investigated on InP based In-0.53 Ga0.47As/In-0.52 Al-0.48 As quantum well samples with two occupied subbands by means of magnetotransport measurements at the temperature of 1.5 K in a magnetic field range of 0 to 13 T. Under the condiction that Laundau-level broadening is larger than the spin splitting of each subband, filling factors are even when the splitting energy of two subbands is an integer multiple of the cyclotron energy, i. e. Delta E-21 = khw(c). If the splitting energy of two subbands is half of an odd interger multiple of the cyclotron erergy, i. e. Delta E-21 = (2 k + 1) hw(c) /2, the filling factor is odd.

Identificador

http://ir.semi.ac.cn/handle/172111/6622

http://www.irgrid.ac.cn/handle/1471x/63049

Idioma(s)

中文

Fonte

Shang, LY ; Lin, T ; Zhou, WZ ; Guo, SL ; Li, DL ; Gao, HL ; Cui, LJ ; Zeng, YP ; Chu, JH .Investigation of filling factor in In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands ,ACTA PHYSICA SINICA,2008 ,57(6): 3818-3822

Palavras-Chave #半导体物理 #In0.53Ga0.47As/In-0.52 Al0.48As quantum well #filling factor #magnetotransport measurement
Tipo

期刊论文