单脊条形可调谐电吸收调制DFB激光器

报道了一种波长可热调谐的电吸收调制分布反馈激光器(Electroabsorption modulated distributed feedback laser,EML)。在激光器条形的侧面淀积一薄膜加热器，EML实现了2.2nm的连续调谐。在调谐范围内，激光器输出功率的变化小于3dB。采用端面有效反射率方法和耦合波理论的计算表明

Real-time far distance micro-vibration measurement using an external cavity semiconductor laser interferometer with a feedback control system

An external cavity semiconductor laser interferometer used to measure far distance micro-vibration in real time is proposed. In the interferometer, a single longitudinal mode and excellent coherent characteristic grating external cavity semiconductor laser is constructed and acted as a light source and a phase compensator. Its coherent length exceeds 200 meters. The angle between normal and incidence beam of the far object is allowed to change in definite range during the measurement with this interferometer, and this makes the far distance interference measurement easier and more convenient. Also, it is not required to keep the amplitudes of the first and second harmonic components equal, and then the dynamic range is increased. A feedback control system is used to compensate the phase disturbance between the two interference beams introduced by environmental vibration.

Wavelength tunable electroabsorption modulated DFB baser with thin film heater

　

1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser

1.3 mu m strained-layer multi-quantum wells complex-coupled distributed feedback lasers with a wide temperature range of 20 to 100 degrees C are reported. The low threshold current of 10mA and high single-facet slope efficiency of 0.3mW/mA were obtained for an as cleaved device. The single mode yield was as high as 80%.

InP-based optoelectronic devices for optical fiber communications

In this contribution we report the research and development of 1.55 mu m InGaAsP/InP gain-coupled DFB laser with an improved injection-carrier induced grating and of high performance 1.3 mu m and 1.55 mu m InGaAsP/InP FP and DFB lasers for communications. Long wavelength strained MQW laser diodes with a very low threshold current (7-10 mA) have been fabricated. Low pressure MOVPE technology has been employed for the preparation of the layered structure. A novel gain-coupled DFB laser structure with an improved injection-carrier modulated grating has been proposed and fabricated. The laser structures have been prepared by hybrid growth of MOVPE and LPE techniques and reasonably good characteristics have been achieved for resultant lasers. High performance 1.3 mu m and 1.55 mu m InGaAsP/InP DFB lasers have successfully been developed for CATV and trunk line optical fiber communication.

All-Optical Clock Recovery for 20 Gb/s Using an Amplified Feedback DFB Laser

We report all optical clock recovery based on a monolithic integrated four-section amplified feedback semiconductor laser (AFL), with the different sections integrated based on the quantum well intermixing (QWI) technique. The beat frequency of an AFL is continuously tunable in the range of 19.8-26.3 GHz with an extinction ratio above 8 dB, and the 3-dB linewidth is close to 3 MHz. All-optical clock recovery for 20 Gb/s was demonstrated experimentally using the AFL, with a time jitter of 123.9 fs. Degraded signal clock recovery was also successfully demonstrated using both the dispersion and polarization mode dispersion (PMD) degraded signals separately.

Surface Emitting Distributed Feedback Quantum Cascade Laser around 8.3 mu m

We demonstrate surface emitting distributed feedback quantum cascade lasers emitting at wavelengths from 8.1 mu m at 90 K to 8.4 mu m at 210 K. The second-order metalized grating is carefully designed using a modified coupled-mode theory and fabricated by contact lithography. The devices show single mode behavior with a side mode suppression ratio above 18 dB at all working temperatures. At 90 K, the device emits an optical power of 101 mW from the surface and 199 mW from the edge. In addition, a double-lobe far-field pattern with a separation of 2.2 degrees is obtained in the direction along the waveguide.

Spin splitting modulated by uniaxial stress in InAs nanowires

We theoretically study the electronic structure, spin splitting, effective mass, and spin orientation of InAs nanowires with cylindrical symmetry in the presence of an external electric field and uniaxial stress. Using an eight-band k center dot p theoretical model, we deduce a formula for the spin splitting in the system, indicating that the spin splitting under uniaxial stress is a nonlinear function of the momentum and the electric field. The spin splitting can be described by a linear Rashba model when the wavevector and the electric field are sufficiently small. Our numeric results show that the uniaxial stress can modulate the spin splitting. With the increase of wavevector, the uniaxial tensile stress first restrains and then amplifies the spin splitting of the lowest electron state compared to the no strain case. The reverse is true under a compression. Moreover, strong spin splitting can be induced by compression when the top of the valence band is close to the bottom of the conductance band, and the spin orientations of the electron stay almost unchanged before the overlap of the two bands.

PERFORMANCE OF DOUBLE SIDEBAND MODULATED PROBE WAVE IN BOTDA DISTRIBUTED FIBER SENSOR

We report on the performance of double sideband (DSB) modulated probe wave in Brillouin optical time domain analysis (BOTDA) distributed fiber sensor. Compared to single sideband (SSB)modulation, along the sensing fiber the pump depletion of DSB modulation is remarkably suppressed in time domain and also has a relatively narrower Brillouin gain spectrum in frequency domain. Both the theoretical simulation and the experimental results demonstrate that the DSB modulation provides potentially longer sensing distance and higher accuracy in measurement than the SSB modulation in the BOTDA distributed fiber sensor system.