Effect of heavy boron doping on the electrical characteristics of SiGeHBTs

A modified version of the Jain-Roulston (J-R) model is developed that takes into account the compensation effect of B to Ge in strained SiGe layers for the first time. Based on this new model, the distribution of the bandgap narrowing (BGN) between the conduction and valence bands is calculated. The influence of this distribution on the transport characteristics of abrupt SiGe heterojunction bipolar transistors (HBTs) has been further considered by using the tunnelling and thermionic emission mechanisms instead of the drift and diffusion mechanisms at the interfaces where discontinuities in energy levels appear. The results show that our modified J-R model better fits the experimental values, and the energy band structure has a strong influence on electrical characteristics.

Diffractive Grating Based Out-of-Plane Coupling between Silicon Nanowire and Optical Fiber

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T07:55:26Z No. of bitstreams: 1 Diffractive Grating Based Out-of-Plane Coupling between Silicon Nanowire and Optical Fiber.pdf: 232805 bytes, checksum: 0bd17756b8a703bf8337dd25bbddaca3 (MD5)

Design and Simulation Analysis of Spot-Size Converter in Silicon-On-Insulator

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T08:02:20Z No. of bitstreams: 1 Design and Simulation Analysis of Spot-Size Converter in Silicon-On-Insulator.pdf: 239163 bytes, checksum: 82db1386c266d0c07442a972348da08c (MD5)

High-Order Microring Filters on SOI Wafer

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T08:05:17Z No. of bitstreams: 1 High-Order Microring Filters on SOI Wafer.pdf: 236326 bytes, checksum: dea85274da2a205a54b8a46049db9c94 (MD5)

High-Q and High-extinction-ratio Microdisk Add-drop Filter with Grating Couplers in Silicon-on-Insulator

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T08:08:51Z No. of bitstreams: 1 High-Q and High-extinction-ratio Microdisk Add-drop Filter with Grating Couplers in Silicon-on-Insulator.pdf: 662474 bytes, checksum: dbdd3fba410c875bd74a6d4823930a44 (MD5)

InGaAsP/InP Bistability Triangle Microlasers

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T08:12:07Z No. of bitstreams: 1 InGaAsP-InP Bistability Triangle Microlasers.pdf: 305729 bytes, checksum: 9bfb7f71e2d39dc99bcee91b9a48de3c (MD5)

Large-Signal Performance of 1.3 mu m InAs/GaAs quantum-dot lasers

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T08:15:32Z No. of bitstreams: 1 Large-Signal Performance of 1.3 mu m InAs-GaAs quantum-dot lasers.pdf: 281494 bytes, checksum: 1ebcdfdc887e3a3b279e07b3f655167b (MD5)

Demonstration of high efficient tunable lasing with one photonic crystal W1 waveguide

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T08:18:15Z No. of bitstreams: 1 Demonstration of high efficient tunable lasing with one photonic crystal W1 waveguide.pdf: 564778 bytes, checksum: 1eb1246461d4a3fcc99e870bda90f9b4 (MD5)