STUDY OF THE LONG-TERM STABILITY OF THE EFFECTIVE CONCENTRATION OF IONIZED SPACE CHARGES (N-EFF) OF NEUTRON-IRRADIATED SILICON DETECTORS FABRICATED BY VARIOUS THERMAL-OXIDATION PROCESSES

Experimental study of the reverse annealing of the effective concentration of ionized space charges (N-eff, also called effective doping or impurity concentration) of neutron irradiated high resistivity silicon detectors fabricated on wafers with various thermal oxides has been conducted at room temperature (RT) and elevated temperature (ET). Various thermal oxidations with temperatures ranging from 975 degrees C to 1200 degrees C with and without trichlorethane (TCA), which result in different concentrations of oxygen and carbon impurities, have been used. It has been found that, the RT annealing of the N-eff is hindered initially (t < 42 days after the radiation) for detectors made on the oxides with high carbon concentrations, and there was no carbon effect on the long term (t > 42 days after the radiation) N-eff reverse annealing. No apparent effect of oxygen on the stability of N-eff has been observed at RT. At elevated temperature (80 degrees C), no significant difference in annealing behavior has been found for detectors fabricated on silicon wafers with various thermal oxides. It is apparent that for the initial stages (first and/or second) of N-eff reverse annealing, there may tie no dependence on the oxygen and carbon concentrations in the ranges studied.

隔离反馈式开关电源的稳定性分析

由于开关电源的非线性,用包络方法对隔离反馈的开关电源的动态特性进行分析较为复杂,本文采用连续建模的状态空间平均法,建立了隔离反馈的正激式开关电源的小信号模型,并利用控制理论,分析了隔离反馈的开关电源的稳定性问题.研究表明,隔离反馈引入的延时,将会导致系统动态的性能的下降,严重时可能导致系统发生振荡,为此在设计时需考虑采用补偿的方法加以解决.

静压下半导体微腔内激子与光子行为的研究

由于腔模与激子对压力的依赖关系不同，所以可以选择不同的压力使激子和光场处于不同的耦合状态，从而实现对耦合的调谐。利用这种办法，我们观测到了代表激子与光场强耦合作用的Rabi分裂。由于在我们现有样品结构中压力对激子本征行为的影响很小，与以前报道的温度、电场等调谐方式相比，这种调谐方法不仅可以有效地调谐半导体微腔内激子与腔模的耦合程度，而且能够保持激子的本征性质在整个调谐过程中基本不变。这有助于研究在强耦合过程中激子极化激元的本征性质。将实验结果与压力下激子与腔模耦合理论进行拟合，得出了正确的Rabi分裂值。

通过倾斜多晶硅p-n结光电器件提高光电转换性能

本研究针对多晶硅p-n结光伏器件开展工作。基于倾斜光电转换器件的思想，倾斜本研究采用的光电转换器件使入射光线与器件表面法线成75度的夹角，从而使红外光在器件内形成多次全反射。这种内部全反射增加了光在器件内的光程，使得光在器件内的吸收得以增加。从采光的角度上发现，倾斜多晶硅光电转换器件可使器件的光电转换效率提高15%。此外，还发现了由倾斜器件造成开路电压稍微减小的现象并给予了解释。

光生物传感技术与癌症易感性的检出

介绍了检测肿瘤易感个体的新方法-光生物传感技术。由此可作出细胞癌变的易感个体的预警,并给出针对性的预防措施。

一种纳米分辨率近场光学显微镜-光子扫描隧道显微镜

报导了一台光子扫描隧道显微镜。论述了原理，结构，光纤探针制造，信号放大以及调试中解决的几个技术问题等。图像的横向分辨率优于10nm,纵向分辨率约1nm，扫描范围10μm×10μm。还观察了云母、高密度乙烯HDPE高取向薄膜等透明材料及铌酸锂(LiNbO_3+T_i)波导的电光效应等。

Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots

The photoluminescence (PL) of In0.55Al0.45As/Al0.5Ga0.5As self-assembled quantum dots has been measured at 15 and 80 K under hydrostatic pressure. The lateral size of the dots ranges from 7 to 62 nm. The emissions from the dots with 26, 52 and 62 nm size have a blue shift under pressure, indicating that these quantum dots have the normal type-I structure with lowest conduction band at the Gamma -valley. However, the PL peak of dots with 7 nm diameter moves to lower energy with increasing pressure. It is a typical character for the X-related transition. Then these small dots have a type-II structure with the X-valley as the lowest conduction level. An envelope-function calculation confirms that the Gamma -like exciton transition energy will rise above the X-like transition energy in the In0.55Al0.45As/Al0.5Ga0.5As structure if the dot size is small enough.

Self-sustained oscillations caused by magnetic field in a weakly-coupled GaAs/AlAs superlattice

We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneling processes of electric field domains in doped weakly coupled GaAs/AlAs superlattices. Three regimes, i.e, stable field domains, current self-sustained oscillations and averaged field distribution are successively observed with increasing B. The mechanisms of switching-over among these regimes are due to B-induced modification of the dependence of the effective electron drift velocity on electric field. The simulated calculation gives a good agreement with the observed experimental results. (C) 2000 Published by Elsevier Science B.V. All rights reserved.