The design algorithm of an associative memory neural network

A design algorithm of an associative memory neural network is proposed. The benefit of this design algorithm is to make the designed associative memory model can implement the hoped situation. On the one hand, the designed model has realized the nonlinear association of infinite value pattern from n dimension space to m dimension space. The result has improved the ones of some old associative memory neural network. On the other hand, the memory samples are in the centers of the fault-tolerant. In average significance the radius of the memory sample fault-tolerant field is maximum.

AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD

A novel AlGaN/GaN/GaN/GaN double heterojunction high electron mobility transistors (DH-HEMTS) structure with an AlN interlayer on sapphire substrate has been grown by MOCVD. The structure featured a 6-10 nm In0.1Ga0.9N layer inserted between the GaN channel and GaN buffer. And wer also inserted one ultrathin. AlN interlayer into the Al/GaN/GaN interface, which significantly enhanced the mobility of two-dimensional electron gas (2DEG) existed in the GaN channel. AFM result of this structure shows a good surface morphology and a low dislocation density, with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu m x 5 mu m. Temperature dependent Hall measurement was performed on this sample, and a mobility as high as 1950 cm(2)/Vs at room temperature (RT) was obtained. The sheet carrier density was 9.89 x10(12) cm(2), and average sheet resistance of 327 Omega/sq was achieved. The mobility obtained in this paper is about 50% higher than other results of similar structures which have been reported. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD

AlGaN/AlN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) structures with improved buffer isolation have been investigated. The structures were grown by MOCVD on sapphire substrate. AFM result of this structure shows a good surface morphology with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu mx5 mu m. A mobility as high as 1950 cm(2)/Vs with the sheet carrier density of 9.89x10(12) cm(-2) was obtained, which was about 50% higher than other results of similar structures which have been reported. Average sheet resistance of 327 Omega/sq was achieved. The HEMTs device using the materials was fabricated, and a maximum drain current density of 718.5 mA/mm, an extrinsic transconductance of 248 mS/mm, a current gain cutoff frequency of 16 GHz and a maximum frequency of oscillation 35 GHz were achieved.

由一阶逻辑公式得到命题逻辑可满足性问题实例

命题逻辑可满足性(SAT)问题是计算机科学中的一个重要问题.近年来许多学者在这方面进行了大量的研究,提出了不少有效的算法.但是,很多实际问题如果用一组一阶逻辑公式来描述,往往更为自然.当解释的论域是一个固定大小的有限集合时,一阶逻辑公式的可满足性问题可以等价地归约为 SAT 问题.为了利用现有的高效 SAT工具,提出了一种从一阶逻辑公式生成 SAT 问题实例的算法,并描述了一个自动的转换工具,给出了相应的实验结果.还讨论了通过增加公式来消除同构从而减小搜索空间的一些方法.实验表明,这一算法是有效的,可以用来解决数学研究和实际应用中的许多问题.

EWAF:一种Web应用程序框架

随着Web应用开发变得越来越复杂,如何快速开发出稳定健壮的Web应用程序成为开发者面临的巨大挑战,Web应用程序框架(WAF)就是为了适应这种挑战而出现的.提出了一种基于J2EE的Web应用程序框架EWAF,框架通过其特有的服务层、层次性的控制方式、组合式的视图结构及应用程序级的安全支持,使得Web开发者能够快速高效地构建安全的Web应用程序.目前,EWAF已应用到企业信息门户OncePortal的实现中.

黄土高原坡地枣树地膜微集水造林效果研究

在黄土高原丘陵沟壑区,采用田间试验研究了地膜微集水造林技术对提高枣树成活率、土壤温度以及枣树根区土壤水分含量的影响。结果表明:地膜微集水方法提高枣树移栽期0~100cm土层土壤水分,提高0~20 cm土层地温,造林成活率较对照提高15%;在枣树生长期和发芽期,土壤0~100 cm剖面含水量比对照高30.3%;在集中降雨后48 h内,土壤水分下渗深度比对照深34 cm,达到67 cm。该方法成本低、操作简单、效率高,可以在黄土高原枣树栽植中推广应用。

黄土旱塬长期施肥条件下小麦钾素营养和肥料利用率的研究

为了给黄土旱地经济合理施肥、粮食增产提供科学依据。[方法]在长期定位试验的基础上,研究了不同施肥对小麦产量、各生育期钾素营养和肥料利用率的影响。[结果]不同施肥小麦增产效果差异显著。单施氮肥小麦增产75.3%,单施磷肥小麦产量则降低24.7%,NM、PM、NPM配施小麦增产75.9%~92.9%;小麦钾素的吸收主要集中在生长发育前期,孕穗期以后因泌钾现象多表现为负吸收,施用有机肥,特别是无机肥与有机肥配施,促进小麦吸钾作用明显,小麦植株各器官含钾量明显提高;单施N肥、NP配施小麦钾素的吸收量、吸收速率较高,单施有机肥及有机无机肥配合施用小麦钾素吸收量和吸收速率比对照也有明显提高;单施N肥小麦氮肥利用率较高为76.73%,单施P肥小麦磷肥利用率较低仅为14.20%,NP配施与单施P肥相比,吸磷量、吸钾量分别增加112.53%和79.36%。施用有机肥可以显著提高作物氮、磷、钾吸收量,但肥料利用率却不高。[结论]施用有机肥以及有机无机肥配合施用,可以明显促进小麦对氮、磷、钾养分的吸收,提高小麦产量。