241 resultados para 310-M0009B


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Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers are presented. The growth of the 4H-SiC homoepilayers was carried out in a LPCVD system. The size of the active area of the photodetector was 300 x 300 mu m(2). The dark and illuminated I-V characteristics were measured at reverse biases from 0 V to 30 V at room temperature. The illuminated current was at least two orders of magnitude higher than the dark current at a bias of below 12 V. The photoresponse was measured from 200 nm to 400 nm at different reverse biases and the peak values of the photo response were located at 3 10 nm. The calculated spectral detectivity D* was shown to be higher than 10(13) cmHz(1/2)/W from 260 to 360 nm with a peak value of 5.9 x 10(13) cmHz(1/2) /W at 310 nm. The peak value of the photoresponse was hundreds of times higher than the response at 400 nm, which showed the device had good visible blind performance. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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本文提出了一种新的基于优先级表的实时调度算法 ,称作截止期—价值密度优先 (Deadline ValueDen sityFirst)算法 ,简称DVDF算法 .DVDF算法综合考虑了实时任务的截止期和价值密度两个参数 ,能够更好地适应不同的负载情况 .通过使用正常负载和过载情况下的典型数据对算法进行仿真研究表明 ,这种算法比单纯考虑截止期的EDF(EarliestDeadlineFirst)算法在性能方面有明显的改进 ,特别是在系统过载的情况下 ,能够优雅地降级

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简要叙述了磷酸型燃料电池(PAFC)最新研究进展,介绍了在相同条件下比较氢和甲烷作为燃料在磷酸(85% )电解质和A型电解质(多氟磷酸和磷酸的混合物)中的电化学行为。在130℃,将A型电解质燃料电池的输出特性与磷酸(85% )电解质燃料电池进行比较。全部试验在有参比电极的三电极试验电池中进行,试验电极采用自制电极,辅助电极采用光亮铂电极或者镀铂电极,参比电极采用动态氢电极。测量系统是由D.H.W 型恒电位/恒电流仪和3086 型记录仪组成。A型电解质燃料电池的输出功率高于磷酸(85% )电解质燃料电池,这是由于A型电解质具有较高的离子活性和活度。实验表明,A型电解质具有较高的电化学性能。

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Principal Component and Canonical Correlation Analysis of the Environmental Factors Influencing the Growth of Caragana korshinskii Kom. in Grassland

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本论文由两大部分组成。第一部分是新型稀土永磁材料Nd-Fe-B氧化过程及抗氧化新体系的研究。Nd-Fe-B永磁体是1983年问世的新型稀土永磁材料。和原有的铁氧体及Sm-Co体系相比,具有磁能积高(50MGOe)。价廉源广,制备简单等三大优点;也有居里温度低(310℃),温度系数大(-0.126%/K),易氧化等三大缺点,我们对Nd-Fe-B合金的氧化过程进行研究,发现该材料热稳定性差,容易发生氧化反应,氧化使材料的结构受到破坏,并给材料的磁性造成不可恢复的损失,整个氧化过程是分阶段的。在室温和干燥的空气中材料基本是稳定的。150℃以下材料磁性受到破坏的主要原因是体系中Nd的氧化。230℃以上材料主体成分Fe也开始氧化,温度升高使反应进程大大加快。到800℃左右反应基本结束,最终产物主要为Fe_2O_3, Nd_2O_3·FeNdO_3和NdBO_3。增加体系中B的相对含量和添加某些新的元素均能提高材料的抗氧化能力,新研制的Nd-Fe-B-Si四元体系和原来的Nd-Fe-B体系相比具有下列显著优点:新体系的抗氧化能力大大提高,经过150℃的长期恒温试验,材料的结构,磁性均未受到破坏,某些体系甚至能在更高的温度下使用,另外,新体系的居里温度Tc也大为提高。比原有Nd-Fe-B磁体高40℃左右。因此该体系是一种大有发展前途的新材料。此外,我们用动态热重法研究了Nd-Fe-B合金的氧化动力学过程,但由于我们新合成的体系构相较为复杂,未能达到预期效果。第二部分是CuO,Y_2Cu_2O_5,BaCuO_2和RBa_2Cu_3O_(7-δ)超导体(R稀土元素)磁化率及铜价态研究,铜的氧化物具有复杂的化学计量关系和磁学性质。在对CuO的磁化率研究中,我们发现在低温区(77K-110K)和一定磁场下,CuO由顺磁突变为抗磁。这种转变与磁场强度有很大关系。这一结果与前人的工作有较大的出入。而与超导体的形为极为相似。所不同的是,转变温度与样品的重量也有关系。实验结果重复。由于铜氧性质在R-Ba-Cu-O超导体中起决定作用,因此有必要对CuO的低温磁性作进一步研究。此外,我们对文献尚未报道的Y_2Cu_2O_5的磁化率在77-300K温度区间进行了测量,发现它是顺磁性物质,室温有效磁矩μ_(eff) = 2.13μB。高于Cu~(2+)的理论有效磁矩(1.73μB)。经过碘量法价态分析,发现Y_2Cu_2O_5中有部分Cu~(3+),这与磁化率的测定相符合。Tc在90K左右的Y-Ba-Cu-O体系是近期才发现的具有超高温超导材料。该体系有着独特的结构和性质。在对R-Ba-Cu-O及R-Ba-Cu-O-Ag超导体的研究中,我们发现此类超导体属II类超导体,在临界温附近该超导体由顺磁转变为抗磁,此种变化与磁场强度有很大关系,当场强大于一定值后,则观察不到这种转变。在对RBa_2Cu_3O_(7-δ) (R = Y, Sm, Eu, Gd, Dy, Ho, Er, Tm)超导体和具有相同配比但由于合成工艺条件不同而不超导的R'Ba_2Cu_3O_(7-δ) (R' = Y, Sm, Eu, Gd)非超导体的铜价态分析中,我们发现此两类化合物中均含有一定量的Cu~(3+)。且超导体中Cu~(3+)的含量高于非超导体中Cu~(3+)的含量(同样比例)。我们还发现Cu~(3+)对水极为敏感,将RBa_2Cu_3O_(7-δ) (除R = Gd, Dy, Er)超导体在未干燥容器中测出的Cu~(3+)量远远低于干燥容器中所测得的值。我们认为这可能是引起超导体不稳定的重要原因。由于尚缺乏用其它手段检测到超导体中Cu~(3+)存在的例证。故对此问题还有待于今后继续作进一步的研究。

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Albumin, the most abundant protein components of blood plasma, is synthesized and secreted by liver cells in vertebrates. Recently, it was demonstrated that frog Bombina maxima albumin is also expressed in skin. Both B. maxima albumins from skin and serum (BmA-skin and BmAserum) have similar biochemical characteristics except that the former contains haem b. Present studies showed that BmA-skin exhibited cytotoxic activity on H9 and C8166 cells. Pretreated with hemin to induce erythroid differentiation, K562 cells lost their resistance to cytotoxicity of BmAskin. After treating cells with BmA-skin for 48 h, 50 percentage cytotoxic concentrations (CC50) of BmA-skin on H9, C8166 and hemin-treated K562 cells were 1.31±0.09, 1.59±0.08 and 2.28±0.06 μM, respectively. The cell death induced by BmA-skin was mediated by apoptosis of the tested cell lines, as demonstrated by nuclear morphological changes, DNA fragmentation and DNA hypodiploidy of apoptosis cells. At BmA-skin concentration of 2 μM, 27.3%, 19.7% and 17.8% of H9, C8166 and hemin-treated K562 cells were found to be apoptotic. In contrast, BmA-serum possessed no cytotoxic and apoptosis-inducing activity on all the cell lines tested, even with concentration used up to 15 μM. These results indicated that bound haem b in BmA-skin contributed significantly to its cytotoxic and apoptosis-inducing activity on the cell lines assayed.

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A scattering process modeled by an imaginary potential V(I) in the wide well of an asymmetric double quantum well structure (DQWS) is used to model the electron tunneling from the narrow well. Taking V(I) approximately -5 meV, the ground resonant level lifetimes of the narrow well in the DQWS are in quantitative agreement with the experimental resonance and non-resonance tunneling times. The corresponding scattering time 66 fs is much faster than the intersubband scattering time of LO-photon emission.

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Square microcavity laser with an output waveguide is proposed and analyzed by the finite-difference time-domain (FDTD) technique. For a square resonator with refractive index of 3.2, side length of 4 microns, and output waveguide of 0.4-micron width, we have got the quality factors (Q factors) of 6.7×10~2 and 7.3×10~3 for the fundamental and first-order transverse magnetic (TM) mode near the wavelength of 1.5 microns, respectively. The simulated intensity distribution for the first-order TM mode shows that the coupling efficiency in the waveguide reaches 53%. The numerical simulation shows that the first-order transverse modes have fairly high Q factor and high coupling efficiency to the output waveguide. Therefore the square resonator with an output waveguide is a promising candidate to realize single-mode directional emission microcavity lasers.

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在SIMOX SOI材料的埋氧中注氮是为了增强该类材料的抗辐射能力.通过C-V研究表明,对于埋氧层为150 nm的SIMOX SOI材料来说,当在其埋氧中注入4×10~(15)cm~(-2)剂量的氮后,与未注氮埋氧相比,注氮埋氧中的固定正电荷密度显著增加了;而对于埋氧层为375 nm的SIMOX SOI材料来说,当注氮剂量分别为2×10~(15)cm~(-2)和3×10~(15)cm~(-2)时,并未发现埋氧中固定正电荷密度的增加.所有SIMOX注氮后的退火条件是完全相同的.通过SIMS分析,将薄埋氧中固定正电荷密度的增加归结为注氮后的退火所引起的氮在埋氧与Si界面附近的积累.同时还发现,未注氮埋氧中的固定正电荷密度是非常小的.这意味着通常情况下在热生长SiO_2膜中大量存在的氧化物电荷,其数量在SIMOX埋氧中则要相对少得多.

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文章研究了p-GaN/i—GaN/n-Al0.3Ga0.7N异质结背照式p-i—n可见盲紫外探测器的制备与性能。器件的响应区域为310~365nm,最大响应率为0.046A/W,对应的内量子效率为19%,优值因子R0A达到1.77×10^8Ω·cm^2,相应的在363nm处的探测率D^*=2.6×10^12cmHz^1/2W^-1。

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采用低温氮化铟(InN)缓冲层,利用射频等离子体辅助分子束外延(RF-MBE)方法在蓝宝石衬底上获得了晶体质量较好的单晶InN外延膜.用光学显微镜观察所外延的InN单晶薄膜,表面无铟滴.InN(0002)双晶X射线衍射摇摆曲线的半高宽为14′;用原子力显微镜测得的表面平均粗糙度为3.3nm;Hall测量表明InN外延膜的室温背景电子浓度为3.3×10^18cm^3,相应的电子迁移率为262cm^2/(V·s).