Anomalous scattering factor determined by semicircle fitting near the K-absorption edge of Ge

It is shown that the locus of the f' + if '' plot in the complex plane, f' being determined from measured f '' by using the dispersion relation, looks like a semicircle very near the absorption edge of Ge. The semicircular locus is derived from a quantum theory of X-ray resonant scattering when there is a sharp isolated peak in f '' just above the K-absorption edge. Using the semicircular behavior, an approach is proposed to determine the anomalous scattering factors in a crystal by fitting known calculated values based on an isolated-atom model to a semicircular focus. The determined anomalous scattering factors f' show excellent agreement with the measured values just below the absorption edge. In addition, the phase determination of a crystal structure factor has been considered by using the semicircular behavior.

In situ synthesis of ZrO2/ZrW2O8 composites with near-zero thermal expansion

In this paper, ZrO2 and WO3 were used as the raw materials to prepare ZrO2/ZrW2O8 composites by in situ reaction method and the thermal expansion property of the composites was studied. This novel method included a heating step up to 1473 K for 24 h, which combines the synthesizing and sintering of ZrW2O8. The result indicates that ZrO2/ZrW2O8 composite shows near-zero thermal expansion when the weight ratio of ZrO2 and WO3 is 2.5:1. Compared with composites prepared previously by non-reactive sintering of ZrO2 and ZrW2O8, the composites show higher relative density and lower porosity.

Thermal and electric conductivity of near-zero thermal expansion ZrW 2O8//ZrO2 composites

In this work, the microstructure, thermal and electric conductivity properties of near-zero thermal expansion ZrW2O8/ZrO2 and Al2O3 added ZrW2O8/ZrO2 composites were studied. Both the two composites exhibit very low thermal conductivity and the thermal conductivity decreases slightly as the temperature increases. The electric conductivity of the two composites increases with the increasing of the measurement temperature. The Al2O3 added ZrW2O8/ZrO2 composite has higher thermal and electric conductivity than ZrW2O8/ZrO2 composite. The most important factor which causes the difference of the thermal and electric conductivity of the composites is the porosity. (C) 2008 The Ceramic Society of Japan. All rights reserved.

Enhancement of near-band edge photoluminescence of ZnO thin films by employing MgF2 buffer layer

ZnO/MgF2/ZnO sandwich structure films were fabricated. The effects of a buffer layer on structure and optical properties of ZnO films were investigated by X-ray diffraction, photoluminescence, optical transmittance and absorption measurements. Measurement results showed that the buffer layer had the effects of improving the quality of ZnO films and releasing the residual stresses in the films. The near-band edge emissions of ZnO films deposited on the MgF2 buffer layer were significantly enhanced compared with those deposited on bare substrate due to the smaller lattice mismatch between MgF2 and ZnO than that between fused silica and ZnO. (c) 2006 Elsevier B.V. All rights reserved.

Enhancement of near-band-edge photoluminescence of ZnO thin films in sandwich configuration at room temperature

ZnO/ITO/ZnO sandwich structure films were fabricated. The effects of buffer layer on the structure and optical properties of ZnO films were investigated by x-ray diffraction (XRD), photoluminescence, optical transmittance, and absorption measurements. XRD spectra indicate that a buffer layer has the effects of lowering the grain orientation of ZnO films and increasing the residual stresses in the films. The near-band-edge emissions of ZnO films deposited on both single indium tin oxide (ITO) buffer and ITO/ZnO double buffers are significantly enhanced compared with that deposited on a bare substrate due to the quantum confinement effect. (C) 2006 American Institute of Physics.

Optimization of near-field optical field of multi-layer dielectric gratings for pulse compressor

Multi-layer dielectric (MLD) gratings for pulse compressors in high-energy laser systems should provide high diffraction efficiency as well as high laser induced damage thresholds (LIDT). Nonuniform optical near-field distribution is one of the important factors to limit their damage resistant capabilities. Electric field distributions in the gratings and multi-layer film region are analyzed by using Fourier modal method. Optimization of peak electric field in the gratings ridge is performed with a merit function, including both diffraction efficiency and electric field enhancement when the top layer material is HfO2 and SiO2, respectively. A set of optimized gratings parameters is obtained for each structure, which reduce the peak electric field within the gratings ridge to being respective 1.39 and 1.84 times the value of incident light respectively. Finally, we also discuss the effects of gratings refractive index, gratings sidewall angle and incident angle on peak electric field in the gratings ridge. (c) 2006 Elsevier B.V. All rights reserved.

EXPERIMENTS ON AQUATIC ECOSYSTEM REGIME SHIFT IN ENCLOSURES NEAR LAKE DIANCHI, CHINA

To discover how a lake converts from a turbid state to clean state, and what drives this process, we constructed controlled enclosure ecosystems and used the ecological remediation method to force ecosystems to convert from the turbid state to the clean state. Our results show that the driving forces include temperature., macrophyte, silver carp and mussel, which form a combined force to drive the controlled ecosystem to switch. There is a threshold existing in treated enclosure ecosystem during the conversion from turbid to clean state. When TP <0.09 mg.L-1, Chl-a <0.036 mg.L-1, transparency >62 cm, TN <2.15 mg.L-1, CODMn <13.7 mg.L-1, tubidity <10, and the number of algal cells <10(6) cells.L-1, the treated ecosystem changes sharply from turbid to clean state. The conversion process can be divided into three phases: turbid state, clean-turbid transitional state as well as clean state, and described with the power function Y = a*X-b (where Y is water parameter, X is time, a and b are constants), which indicates that the shift in the enclosure ecosystem from turbid to clean state is discontinuous.

Distribution, feeding and body condition of four small fish species in the near-shore and central areas of Liangzi Lake, China

Small fish abundance is usually high in heavily vegetated habitats in Yangtze lakes, China. Visual and swimming barriers created by dense macrophytes beds could reduce feeding efficiency and growth of small fishes. We tested the hypothesis that small fishes in habitats with dense macrophytes would show decreased feeding efficiency and reduced growth rates by comparing feeding efficiency (measured as the relative weight of fore-gut contents), total length, and condition factor of four small young-of-the-year fishes collected in the near-shore (heavily vegetated) and central (less vegetated) areas of Liangzi Lake. Feeding efficiency, total length, or condition factor were each significantly reduced in the near-shore area compared with the central area for Ctenogobius giurinus, Pseudorasbora parva and Carassius auratus auratus. This supports our hypothesis that vegetation abundance may mediate feeding efficiency and growth of small fishes. Although Hypseleotris swinhonis did not show significant decreases in feeding efficiency or growth in the near-shore area, there was not any reversed tendency, i.e. increased feeding rate or growth in the near-shore area compared to the central area.

Band-tail shape and transport near the metal-insulator transition in Si-doped

In the present work, an infrared light-emitting diode is used to photodope molecular-beam-epitaxy-grown Si: Al0.3Ga0.7As, a well-known persistent photoconductor, to vary the effective electron concentration of samples in situ. Using this technique, we examine the transport properties of two samples containing different nominal doping concentrations of Si [1 x 10(19) cm(-3) for sample 1 (S1) and 9 x 10(17) cm(-3) for sample 2 (S2)] and vary the effective electron density between 10(14) and 10(18) cm(-3). The metal-insulator transition for S1 is found to occur at a critical carrier concentration of 5.7 x 10(16) cm(-3) at 350 mK. The mobilities in both samples are found to be limited by ionized impurity scattering in the temperature range probed, and are adequately described by the Brooks-Herring screening theory for higher carrier densities. The shape of the band tail of the density of states in Al0.3Ga0.7As is found electrically through transport measurements. It is determined to have a power-law dependence, with an exponent of -1.25 for S1 and -1.38 for S2.

Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane

This paper reports the mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on silicon substrates. Using bulge testing combined with a refined load-deflection model of long rectangular membranes, which takes into account the bending stiffness and prestress of the membrane material, the Young's modulus, prestress, and fracture strength for the 3C-SiC thin films with thicknesses of 0.40 and 1.42 mu m were extracted. The stress distribution in the membranes under a load was calculated analytically. The prestresses for the two films were 322 +/- 47 and 201 +/- 34 MPa, respectively. The thinner 3C-SiC film with a strong (111) orientation has a plane-gstrain moduli of 415 +/- 61 GPa, whereas the thicker film with a mixture of both (111) and (110) orientations exhibited a plane-strain moduli of 329 +/- 49 GPa. The corresponding fracture strengths for the two kinds of SiC films were 6.49 +/- 0.88 and 3.16 +/- 0.38 GPa, respectively. The reference stresses were computed by integrating the local stress of the membrane at the fracture over edge, surface, and volume of the specimens and were fitted with Weibull distribution function. For the 0.40-mu m-thick membranes, the surface integration has a better agreement between the data and the model, implying that the surface flaws are the dominant fracture origin. For the 1.42-mu m-thick membranes, the surface integration presented only a slightly better fitting quality than the other two, and therefore, it is difficult to rule out unambiguously the effects of the volume and edge flaws.

Modelling and analysis of modal behaviour in SOI slot waveguides

Mode behaviour for SOI slot waveguides is modelled and analysed using a numerical full vectorial method based on the film mode matching method (MMM). Only the quasi-TE mode is investigated. Waveguide heights and slot widths, as well as silicon widths are properly chosen with respect to the single mode behaviour in the slot region. Comparison between the effective index method and our side loss method shows that our single mode condition is creditable. The optical power confinement in slot region for the quasi-TE mode is also studied and presented. We demonstrate that the maximum achievable optical power confinement P-slot and the maximum normalized average optical intensity I-slot are 42% and 26 mu m(-2), respectively.

Simulation demonstration and experimental fabrication of a multiple-slot waveguide

A multiple-slot waveguide is presented and demonstrated through theoretical simulation. Taking a double-slot waveguide as an example, the results show a nearly 30% enhancement of optical intensity compared with the traditional single-slot waveguide with the same slot gap width. Therefore, the E-field intensity of the slot can be increased by adding another smaller slot. A double-slot waveguide with oxide and air as low index slot materials is realized experimentally and the formation processes of the slots are analyzed.