Space grown semi-insulating gallium arsenide single crystal and its application

Low noise field effect transistors and analogue switch integrated circuits (ICs) have been fabricated in semi-insulating gallium arsenide (SI-GaAs) wafers grown in space by direct ion-implantation. The electrical behaviors of the devices and the ICs have surpassed those fabricated in the terrestrially grown SI-GaAs wafers. The highest gain and the lowest noise of the transistors made from space-grown SI-GaAs wafers are 22.8 dB and 0.78 dB, respectively. The threshold back-gating voltage of the ICs made from space-grown SI-GaAs wafers is better than 8.5 V The con-elation between the characterizations of materials and devices is studied systematically. (C) 2002 COSPAR. Published by Elsevier Science Ltd. All rights reserved.

Semi-insulating GaAs grown in outer space

A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. The characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in GaAs single crystal was used to analyze the space-grown GaAs single crystal. The distribution of stoichiometry in a GaAs wafer was measured for the first time. The electrical, optical and structural properties of the space-grown GaAs crystal were studied systematically, Device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating GaAs wafers has a close correlation with the crystal's stoichiometry. (C) 2000 Elsevier Science S.A. All rights reserved.

Structural properties of SI-GaAs grown in space

The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. The quality of the crystal was first evaluated by x-ray rocking-curve method. The full width at half maximum of x-ray rocking curve in space-grown SI-GaAs is 9.4+/-0.08 are seconds. The average density of dislocations revealed by molten KOH is 2.0 X 10(4) cm(-2), and the highest density is 3.1 X 10(4) cm(-2). The stoichiometry in the single crystal grown in space is improved as well. Unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (C) 1999 COSPAR. Published by Elsevier Science Ltd.

Modal correction for fiber-coupling efficiency in free-space optical communication systems through atmospheric turbulence

High-speed free-space optical communication systems have recently used fiber-optical components. The coupling efficiency with which the received laser beam can be coupled into a single-mode fiber is noticeably limited by atmospheric turbulence due to the degradation of its spatial coherence. Fortunately, adaptive optics (AO) can alleviate this limitation by partially correcting the turbulence-distorted wavefront. The coupling efficiency improvement provided by Zernike modal AO correction is numerically evaluated. It is found that the first 3-20 corrected polynomials can considerably improve the fiber-coupling efficiency. The improvement brought by AO is compared with that brought by a coherent fiber array. Finally, a hybrid technique that integrates AO and a coherent fiber array is proposed. Results show that the hybrid technique outperforms each of the two above-mentioned techniques. (C) 2009 Elsevier GmbH. All rights reserved.

Development and transition of spiral wave in the coupled Hindmarsh-Rose neurons in two-dimensional space

The dynamics and the transition of spiral waves in the coupled Hindmarsh-Rose (H-R) neurons in two-dimensional space are investigated in the paper. It is found that the spiral wave can be induced and developed in the coupled HR neurons in two-dimensional space, with appropriate initial values and a parameter region given. However, the spiral wave could encounter instability when the intensity of the external current reaches a threshold value of 1.945. The transition of spiral wave is found to be affected by coupling intensity D and bifurcation parameter r. The spiral wave becomes sparse as the coupling intensity increases, while the spiral wave is eliminated and the whole neuronal system becomes homogeneous as the bifurcation parameter increases to a certain threshold value. Then the coupling action of the four sub-adjacent neurons, which is described by coupling coefficient D', is also considered, and it is found that the spiral wave begins to breakup due to the introduced coupling action from the sub-adjacent neurons (or sites) and together with the coupling action of the nearest-neighbour neurons, which is described by the coupling intensity D.

A compact proton source for space simulation

A compact proton beam source for space simulation has been developed. A compact structure was designed in order to meet the special requirements of miniaturization. Some particular means have been adopted for improving the proton portion and beam transmission at a long distance. The experimental results showed that 8mA/80keV proton beam can be successfully obtained from this source at about 700W input microwave power.

空间辐射生物学研究进展；Research Progress on Space Radiation Biology

空间电离辐射尤其是高能带电粒子辐射可造成生物机体的严重损伤,是载人航天飞行的关键性限制因素之一。研究表明,带电粒子的生物学效应与其性质、剂量以及不同生物学终点有关;此外,微重力环境可能会影响空间辐射生物学效应。从多年来的空间搭载实验研究和地基模拟实验研究两个方面,综述了空间辐射的生物损伤效应及其与微重力环境复合作用的生物效应。